Untitled
Abstract: No abstract text available
Text: PD - 96227B IRFH3707PbF Applications l l l l HEXFET Power MOSFET Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS on max Qg 12.4m @VGS = 10V 5.4nC
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96227B
IRFH3707PbF
297mH,
AN-994.
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igbt 300V 70A
Abstract: IRGS4086PBF AN-994
Text: PD - 96222 IRGB4086PbF IRGS4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability
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IRGB4086PbF
IRGS4086PbF
O-220AB
IRGB4086PbF
EIA-418.
igbt 300V 70A
IRGS4086PBF
AN-994
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IRFH3707PbF
Abstract: irfh3707 AN-994 IRFH3707TRPBF
Text: PD - 96227A IRFH3707PbF HEXFET Power MOSFET Applications l l l l Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS on max Qg 12.4m @VGS = 10V 5.4nC
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6227A
IRFH3707PbF
297mH,
AN-994.
IRFH3707PbF
irfh3707
AN-994
IRFH3707TRPBF
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AN-994
Abstract: IRFH3707TRPBF irfh3707
Text: PD - 96227B IRFH3707PbF Applications l l l l HEXFET Power MOSFET Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS on max Qg 12.4m @VGS = 10V 5.4nC
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96227B
IRFH3707PbF
297mH,
AN-994.
AN-994
IRFH3707TRPBF
irfh3707
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IRFH3707PbF
Abstract: IRFH3707TRPBF AN-994 st 9622 irfh3707
Text: PD - 96227 IRFH3707PbF HEXFET Power MOSFET Applications l l l l Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS on max Qg 12.4m @VGS = 10V 5.4nC
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IRFH3707PbF
297mH,
AN-994.
IRFH3707PbF
IRFH3707TRPBF
AN-994
st 9622
irfh3707
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Untitled
Abstract: No abstract text available
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3
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IRF8734PbF
10irf
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IRF8734PBF
Abstract: IRF8734TRPBF
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF8734PbF
10formation:
IRF8734PBF
IRF8734TRPBF
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33A-250
Abstract: No abstract text available
Text: PD -96225 IRG4PH50S-EPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50S-EPbF
O-247AC
O-247AD
O-247AD
33A-250
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Untitled
Abstract: No abstract text available
Text: PD -96225 IRG4PH50S-EPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50S-EPbF
O-247AC
O-247AD
O-247AD
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240v to 15v
Abstract: IRGI4086PBF
Text: PD - 96223 IRGI4086PbF PDP TRENCH IGBT Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability
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IRGI4086PbF
O-220AB
240v to 15v
IRGI4086PBF
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IRLR3636PBF
Abstract: MOTOR DRIVER 48v 50A irlr3636 AN-994 IRLU3636PBF
Text: PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits
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IRLR3636PbF
IRLU3636PbF
IRLR3636PbF
EIA-481
EIA-541.
EIA-481.
MOTOR DRIVER 48v 50A
irlr3636
AN-994
IRLU3636PBF
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Untitled
Abstract: No abstract text available
Text: PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits
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IRLR3636PbF
IRLU3636PbF
IRLR3636PbF
EIA-481
EIA-541.
EIA-481.
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IRF6729
Abstract: IRF6729M irf6729mtrpbf
Text: PD - 96229 IRF6729MPbF IRF6729MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
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IRF6729MPbF
IRF6729MTRPbF
IRF6729
IRF6729M
irf6729mtrpbf
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Untitled
Abstract: No abstract text available
Text: PD - 96229 IRF6729MPbF IRF6729MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
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IRF6729MPbF
IRF6729MTRPbF
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152 RMH
Abstract: No abstract text available
Text: 152 RMH Vishay BCcomponents Aluminum Capacitors Radial Miniature, High Voltage FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte Pb-free Available • Radial leads, cylindrical aluminum case, insulated with a blue vinyl sleeve
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21-Jun-05
EN130300
152 RMH
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152 RMH
Abstract: No abstract text available
Text: BCcomponents DATA SHEET 152 RMH Aluminum electrolytic capacitors Radial Miniature, High voltage Product specification Supersedes data of 7th April 2000 File under BCcomponents, BC01 2001 Oct 31 BCcomponents Product specification Aluminum electrolytic capacitors
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MAM079
EN130300
152 RMH
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52339
Abstract: 152 RMH
Text: 152 RMH Vishay BCcomponents Aluminum Capacitors Radial Miniature, High Voltage FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte Pb-free Available • Radial leads, cylindrical aluminum case, insulated with a blue vinyl sleeve
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16-Nov-05
EN130300
52339
152 RMH
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IR9620
Abstract: IRF9620 RF9622 IRF9622 IRF9621 IRF9623 IRF high current p-channel RF9623
Text: H A R R IS IR F 9 6 2 0 , IR F 9 6 2 1 IRF9622, IRF9623 Avalanche Energy Rated P-Channe! Power MOSFETs August 1991 F ea tu re s Package T0-220A B TOP VIEW • -3 A and -3.5A, -150V and -20 0 V • rDS ON = and 2.4Q • Single Pulse Avalanche Energy Rated
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IRF9620,
fRF9621
IRF9622,
IRF9623
-150V
-200V
IRF9621,
IRF9B22
IR9620
IRF9620
RF9622
IRF9622
IRF9621
IRF high current p-channel
RF9623
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UA317
Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Text: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear
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S-11743
S-16308
CH-1218
UA317
Fairchild dtl catalog
free transistor equivalent book 2sc
lm741
MA339PC
MA725HM
MA7805KM
UA759
gi 9640 diod
MA4136PC
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F9222
Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance
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IRF9620/9621
IRFP9220/9221
IRF9220/9221
F9620/IR
IRF9220
IRF9621
/IRFP9221
IRF9221
F9622/IR
IRF9222
F9222
f 9222 l
ir 9621
f9223
F9222 L
F9222 T
IRFP9620
IRFP9220
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st 9622
Abstract: IRF9
Text: P-CHANNEL POWER MOSFETS IRF9620/9621 /9622/9623 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF9620/9621
IRF9620
IRF9620/9621Z9622/9623
st 9622
IRF9
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure
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IRF9620/9621
IRF9622
F9621
IRF9620
IRF9621
IRF9623
IRF9620/9621Ã
Q01E57b
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9622C
Abstract: 9622DM 9622FM 9622DC 9622PC 9622
Text: 9622 DUAL LINE RECEIVER F A I R C H I L D L I N E A R I N T E G R A T E D C I RC UI T GENERAL DESCRIPTION — The 9622 is a Dual Line Receiver designed to discriminate a worst case logic swing o f 2.0V from a ±10V common mode noise signal or ground sh ift. A 1.5V threshold is
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130fi
9622C
9622DM
9622FM
9622DC
9622PC
9622
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RC9622
Abstract: RC9622DC RM9622 RM9622CJ RM9622DC RM962 b130s
Text: 9622 Dual Line Receivers GENERAL DESCRIPTION DESIGN FEATURES The RM9622 and RC9622 are dual line receivers designed to discriminate a worst-case logic swing of 2V from a ±10V common-mode noise signal or ground shift. To provide a CCSLcompatible threshold voltage and maximum noise im munity,
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RM9622
RC9622
AM81EN7
RC9622DC
RM9622CJ
RM9622DC
RM962
b130s
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