igbt data
Abstract: JESD22-A114
Text: PD - 96217A PDP TRENCH IGBT IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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6217A
IRG6S330UPbF
EIA-418.
igbt data
JESD22-A114
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JESD22-A114
Abstract: No abstract text available
Text: PD -96218A PDP TRENCH IGBT IRG6S320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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Original
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-96218A
IRG6S320UPbF
EIA-418.
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: PD -96218 PDP TRENCH IGBT IRG6S320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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Original
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IRG6S320UPbF
EIA-418.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96217 PDP TRENCH IGBT IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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IRG6S330UPbF
EIA-418.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA
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IRG7PH42UD2PbF
IRG7PH42UD2-EPbF
O-247AD
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Untitled
Abstract: No abstract text available
Text: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321GPbF
O-220AB
Y2A68UPS`
O-220AB
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irfb4321
Abstract: 4460 MOSFET AN-1005
Text: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321GPbF
O-220AB
Y2A68UPS`
O-220AB
irfb4321
4460 MOSFET
AN-1005
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IRFB4110GPBF
Abstract: No abstract text available
Text: PD - 96214 IRFB4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
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IRFB4110GPbF
O-220AB
Y2A68UPS`
O-220AB
IRFB4110GPBF
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IRFB4115G
Abstract: IRFB4115GPBF 96216 ir 104a
Text: PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
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IRFB4115GPbF
O-220AB
Y2A68UPS`
O-220AB
IRFB4115G
IRFB4115GPBF
96216
ir 104a
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
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IRFB4115GPbF
O-220AB
Y2A68UPS`
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB3206GPbF
O-220AB
Y2A68UPS`
O-220AB
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IRFB3206GPBF
Abstract: IRFB3206
Text: PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB3206GPbF
O-220AB
Y2A68UPS`
O-220AB
IRFB3206GPBF
IRFB3206
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3306GPbF
O-220AB
Y2A68UPS`
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB4410ZGPbF
O-220AB
Y2A68UPS`
O-220AB
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IRFB4410ZGPBF
Abstract: irfb4410zg 96213 IRFB4410Z
Text: PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB4410ZGPbF
O-220AB
Y2A68UPS`
O-220AB
IRFB4410ZGPBF
irfb4410zg
96213
IRFB4410Z
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IRFB3307ZGPBF
Abstract: Mosfet 75V 120A circuit of smps
Text: PD - 96212 IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic
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IRFB3307ZGPbF
O-220AB
Y2A68UPS`
O-220AB
IRFB3307ZGPBF
Mosfet 75V 120A
circuit of smps
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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PDF
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9614PC
Abstract: 9614DM 9614DC Fairchild 9614 A 9614PC 9614C 9614 line driver LINE DRIVER 9614 9614 ts 9614
Text: 9614 DUAL DIFFERENTIAL LINE DRIVER F A IR C H IL D LINEAR-INTEGRATED CIRCUIT G ENERAL DESCRIPTION — The 9614 is a T T L com patible Dual D iffere n tial Line Driver. It is designed to drive transmission lines either d iffe re n tia lly or single-ended, back-matched or term inated.
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DM9621
Abstract: 9621C ICL 9621 9621FM 9621PC Fairchild 9621 9621DC
Text: 9621 DUAL LINE DRIVER FAIRCHILD LIN EA R IN T E G R A T E D C IR C U I T G E N E R A L D E S C R IP T IO N — T he 9621 was designed to drive transm ission lines in e ith e r a d iffe re n tia l or a single-ended m ode. O u tp u t clam p diodes and back-m atch ing resistors fo r 1 3 0 ft tw is te d pair are
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9621C)
DM9621
9621C
ICL 9621
9621FM
9621PC
Fairchild 9621
9621DC
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PDF
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9614DC
Abstract: 9614DM 9614C 9614 line driver LINE DRIVER 9614 f 9614 lt 613 9614 9614 n 9614f
Text: 9614 DUAL DIFFERENTIAL LINE DRIVER F A IR C H I L D LIN EA R INTEGRATED CIRCU IT G E N E R A L D E S C R IP T IO N — The 9614 is a T T L compatible Dual Differential Line Driver. It is designed to drive transmission lines either differentially or single-ended, back-matched or terminated.
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F9222
Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance
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IRF9620/9621
IRFP9220/9221
IRF9220/9221
F9620/IR
IRF9220
IRF9621
/IRFP9221
IRF9221
F9622/IR
IRF9222
F9222
f 9222 l
ir 9621
f9223
F9222 L
F9222 T
IRFP9620
IRFP9220
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st 9622
Abstract: IRF9
Text: P-CHANNEL POWER MOSFETS IRF9620/9621 /9622/9623 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF9620/9621
IRF9620
IRF9620/9621Z9622/9623
st 9622
IRF9
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure
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IRF9620/9621
IRF9622
F9621
IRF9620
IRF9621
IRF9623
IRF9620/9621Ã
Q01E57b
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dvi-d 24 pin diagram
Abstract: No abstract text available
Text: PIN I PIN CD X DETAIL A XT < <r LD 03 LD eri m — LU CD PIN .144 ± 0.03 48.8CMAX. I.92 MAX.) 0.3091REF.) LENGTHtSEE TABLE)- DVI_D(M) MILIGRID BACK SIDE 8874 1-9621 DVI-D TO M IL IG R ID S IN G L E LIN K C A B L E 5M PARCHMENT WHT 8874 1-96 11 DVI-D TO M IL IG R ID
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3091REF.
S8874IAP
SD-8874
dvi-d 24 pin diagram
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