RUR30100
Abstract: RURP30100 rurp3090 RURP3070 RURP3080
Text: RURP3070, RURP3080, RURP3090, RURP30100 200 200 100 100 IR , REVERSE CURRENT µA IF , FORWARD CURRENT (A) Typical Performance Curves TJ = +175oC TJ = +100oC 10 TJ = +25oC 1 TJ = +175oC 10 TJ = +100oC 1.0 0.1 TJ = +25oC 0.01 0.0 0.5 1.0 1.5 2.0 2.5 400 600
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Original
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RURP3070,
RURP3080,
RURP3090,
RURP30100
175oC
100oC
121oC)
20kHz)
RUR30100
RURP30100
rurp3090
RURP3070
RURP3080
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PDF
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RURP3080
Abstract: transistor 1000V RURP30100
Text: « H a r r is RURP3070, RURP3080 uu — RURP3090, RURP30100 Decem ber 1993 30A, 700V - 1 000V Ultrafast Diodes Package Features JE D E C TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic tRR< 110ns • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V
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OCR Scan
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RURP3070,
RURP3080
RURP3090,
RURP30100
110ns)
O-220AC
P3070,
P3080,
transistor 1000V
RURP30100
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PDF
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Untitled
Abstract: No abstract text available
Text: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V
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OCR Scan
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RURP3070,
RURP3080,
RURP3090,
RURP30100
110ns)
TQ-220AC
RURP30100
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PDF
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RUR30100
Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns
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OCR Scan
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43D2571
110ns)
RUR3070,
RUR3080,
RUR3090,
RUR30100
RUR3080.
RUR3090RUR30100
rur30100 Diode
30a 1000v
RUR3070
RUR3080
RUR3090
VRWM-700V
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PDF
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30100 transistor
Abstract: RURP3080
Text: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature
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OCR Scan
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RURP3070,
RURP3080,
RURP3090,
RURP30100
O-22QAC
110ns)
RURP30100
30100 transistor
RURP3080
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PDF
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IRG4PF50W
Abstract: No abstract text available
Text: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies
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OCR Scan
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IRG4PF50W
100kHz
IRG4PF50W
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PDF
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irg4pf50w
Abstract: No abstract text available
Text: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O p tim ize d for use in W eldin g and S w itc h -M o d e V ces = 900V P o w e r S u pp ly applications • Industry ben chm ark switching losses improve efficiency of all pow er supply topologies
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OCR Scan
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IRG4PF50W
irg4pf50w
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter
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Original
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IRG4PF50W
100kHz
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PDF
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IRG4PF50W equivalent
Abstract: IRG4PF50W
Text: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter
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Original
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IRG4PF50W
100kHz
IRG4PF50W equivalent
IRG4PF50W
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PDF
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IRG4PF50W
Abstract: IRG4PF50W DATASHEET
Text: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter
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Original
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IRG4PF50W
100kHz
IRG4PF50W
IRG4PF50W DATASHEET
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PDF
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pearson 411
Abstract: APT60D80B APT60D100B APT60D90B QGG1047 diode Mof pearson ct 411
Text: A D V A N C E D PO WE R T E C H N O L O G Y 1 - Cathode 2 -Anode Back of Case - Cathode b3E D D H S 7 T D cì Ü O G l O m t 3TT H A V P A d v a n ced P o w er Te c h n o l o g y APT60D100B APT60D90B APT60D80B 1 1000V 900V 800V 60A 60A 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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APT60D100B
APT60D90B
APT60D80B
O-247
O-247AD
pearson 411
QGG1047
diode Mof
pearson ct 411
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PDF
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IR 1838 T
Abstract: IRG4PF50WD
Text: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies
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Original
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IRG4PF50WD
O-247AC
IR 1838 T
IRG4PF50WD
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies
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Original
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IRG4PF50WD
O-247AC
loss2020
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PDF
|
IRG4PF50WD
Abstract: No abstract text available
Text: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies
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Original
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IRG4PF50WD
O-247AC
co0245,
IRG4PF50WD
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PDF
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|
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1MB60-090
Abstract: diagram induction heater B-26 ERD60-100 B25 diode diode b26
Text: E R D 6 - 1 0 0 1 5 A « a g a s s i— K FAST RECOVERY DIODE • ¡N ffi : Features • ftSSiJE High Voltage • ,fl£)|liW/±P$T!l$‘l£ Low forward Voltage drop. Small Package M W M & W i: Connection Diagram : Applications • •torn* m Voltage Resonance Power Supply
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ERD60-100
MB50-090A,
1MB60-090*
1MB60-090
diagram induction heater
B-26
B25 diode
diode b26
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PDF
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Ir 900v 60a
Abstract: APT0406 APT0501 APT0502
Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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Original
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APTC90H12SCTG
Ir 900v 60a
APT0406
APT0501
APT0502
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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Original
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APTC90AM60SCTG
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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Original
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APTC90H12SCTG
|
PDF
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AG QC TRANSISTOR
Abstract: Ir 900v 60a APT0406 APT0501 APT0502
Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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Original
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APTC90AM60SCTG
for00
AG QC TRANSISTOR
Ir 900v 60a
APT0406
APT0501
APT0502
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PDF
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vs 1838 b
Abstract: 98-I
Text: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies
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OCR Scan
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IRG4PF50WD
O-247AC
vs 1838 b
98-I
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PDF
|
Untitled
Abstract: No abstract text available
Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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Original
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APTC90H12SCTG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60m max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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Original
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APTC90AM60SCTG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTC90H12SCTG VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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Original
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APTC90H12SCTG
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PDF
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IHW30N90R
Abstract: H30R90
Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
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IHW30N90R
PG-TO-247-3
IHW30N90R
H30R90
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PDF
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