mbrf1060ctl
Abstract: No abstract text available
Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1
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OD-123
BAT54W
OT-323
BAT54WS
BAT54A
OT-23
BAT54C
BAT54S
mbrf1060ctl
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1n5817 SOD-123
Abstract: mur860 diode Diode MUR1560 MBR2
Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) MBR0520LT1, T3 0.5 20 0.33 0.25 SOD-123 MBR120LSFT1, T3 1.0 20 0.45 0.4 SOD−123 Flat Lead MBR120VLSFT1, T3
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MBR0520LT1,
MBR120LSFT1,
MBR120VLSFT1,
MBR130LSFT1
MBRM110LT1,
MBRA210LT3
MBRS130LT3
MBRS230LT3
MBRS410LT3
MBRD835L
1n5817 SOD-123
mur860 diode
Diode MUR1560
MBR2
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Untitled
Abstract: No abstract text available
Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,
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80SQ045N
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80SQ045N
Abstract: 80SQ045NRL MBR845
Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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80SQ045N
r14525
80SQ045N/D
80SQ045N
80SQ045NRL
MBR845
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Untitled
Abstract: No abstract text available
Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,
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80SQ045N
80SQ045N/D
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80SQ045NG
Abstract: 80SQ 80SQ045N 80SQ045NRL 80SQ045NRLG MBR845
Text: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,
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80SQ045N
80SQ045N/D
80SQ045NG
80SQ
80SQ045N
80SQ045NRL
80SQ045NRLG
MBR845
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Untitled
Abstract: No abstract text available
Text: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,
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80SQ045N
80SQ045N/D
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80SQ045N
Abstract: 80SQ045NRL MBR845
Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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80SQ045N
r14525
80SQ045N/D
80SQ045N
80SQ045NRL
MBR845
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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IEC61730-2
Abstract: powerdi5 IEC61215 SBR10U45SP5 solar panels IEC61730 solar panel blocking diode do-201 pv bypass diode SBR1045 SBR1045SP5
Text: New Product Announcement April 2008 Diodes Announces High Efficiency SBR Rectifiers for Solar Panel Market PowerDI®5 Physical Dimensions: 6.5mm x 4.0mm x 1.1mm SBR10U45SP5 and SBR1045SP5 – SBR Bypass Diodes in PowerDI-5 The new SBR® diodes are the industry's first bypass diodes specifically designed in accordance with the high
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SBR10U45SP5
SBR1045SP5
SBR1045SP5
SBR10U45SD1
DO-201
SBR12A45SD1
IEC61730-2
powerdi5
IEC61215
solar panels
IEC61730
solar panel blocking diode
do-201 pv bypass diode
SBR1045
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40HF
Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Text: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C
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12-Mar-07
40HF
80SQ
80SQ030
80SQ035
80SQ040
80SQ045
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STP4119
Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices
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SG388/D
May-2007
STP4119
Full-bridge SG3525 APPLICATION NOTES
sg3525 application note
mc34063 step up with mosfet
mc34063 step down with mosfet
Full-bridge SG3525
sg3525 pwm INVERTER
MJ2955 300 watts amplifier circuit diagram
MT3336
sg3535a
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schottky diodes 16A
Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460
Text: Bulletin PD-2.047 rev. E 12/01 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units IF AV Rectangular 8 A 35 to 45 V IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C 0.44 V TJ range
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DO-204AR
schottky diodes 16A
80SQ
80SQ035
80SQ040
80SQ045
IRFP460
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ir 80sQ045
Abstract: 40HF 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Text: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C
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DO-204AR
ir 80sQ045
40HF
80SQ
80SQ030
80SQ035
80SQ040
80SQ045
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ir 80sq040
Abstract: No abstract text available
Text: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C
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08-Mar-07
ir 80sq040
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vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m
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VMN-SG2178-1111
vishay 1N4007 DO-214AC
VS-30BQ060PbF
40MT160KPBF
vishay 1N4007 DO-213AB
ss32 control pack
70MT160KPBF
20bq030pbf
430 SBL2040CT
v40150
MBR10T100
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-80SQ.
DO-204AR
DO-204AR
2002/95/EC
11-Mar-11
vishay Axial DO-204AR
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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BTQ100
Abstract: BTQ080 25CT0040 ir 80sQ045 MBR745 ir 50sq080 RC145 c1161 444CNQ 10MQ090
Text: Schottky Rectifiers Products From IR Surface Mount •F AV @ Tc Part Number 10MQ040 10MQ060 10MQ090 VRRM 00 40 60 90 (A) <°c> 1.1 0.77 0.77 92 110 110 0.51 0.57 0.65 - - 50 7.5 5.0 - - 50 15MQ040 40 1.7 - 0.55 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F
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10MQ040
10MQ060
10MQ090
15MQ040
30WQ03F
30WQ04F
30WQ05F
30WQ06F
30WQ09F
30WQ10F
BTQ100
BTQ080
25CT0040
ir 80sQ045
MBR745
ir 50sq080
RC145
c1161
444CNQ
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121NQ035
Abstract: No abstract text available
Text: Other Products From IR Schottky Rectifiers Surface Mount lF AV @ TC VRRM (V) (A) (°C) VFM @ <FM (D (V) 10MQ040 10MQ060 10MQ090 40 60 90 1.1 0 77 0.77 92 110 110 0.51 0.57 0.65 15MQ040 40 1.7 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F 30 40 50 60 90
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10MQ040
10MQ060
10MQ090
15MQ040
30WQ03F
30WQ04F
30WQ05F
30WQ06F
30WQ09F
30WQ10F
121NQ035
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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C18 ph zener
Abstract: LM26761 2676T-5 2676T-3 2676T-12 2676T-1
Text: tß Semiconductor S IM P LE S W IT C H E R High E ffic ie n c y 3A S te p -D o w n SIMPLE LM 2 6 7 6 LM2676 May 1998 National Voltage R eg u la to r The SIMPLE SWITCHER concept provides tor a complete design using a minimum number ol external components. A
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LM2676
LM2676
o11ixed
C18 ph zener
LM26761
2676T-5
2676T-3
2676T-12
2676T-1
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