NF 841
Abstract: 22202
Text: Chip Capacitors Preliminary data Solderability Reflow soldering IR and vapor phase Construction ● Stacked-film technology ● Uncoated Delivery mode Blister tape in accordance with IEC 286-3, reel packing Features ● Excellent self-healing properties
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dissip2749-A4334-
B32749-A0333-+
B32749-A0473-+
B32749-A0683-
B32749-A0104-
B32749-A0154-
B32749-A0224-
B32740-A4224-
B32740-A4334-
B32740-A4474-
NF 841
22202
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SOD-123 marking code 24
Abstract: zener sot23 marking MARKING CODE DO-214AC BZV55C4V3 1N5988B 1N6006B BZV55C6V2 BZV55C12 1N5994B BZV55C15
Text: TM Micro Commercial Components ZENER DIODES MCC Part Number Maximum Zener Impedance ‘B’ Suffix Only Maximum Reverse Leakage Current IR @ VR Max. Zener Voltage Temp Coefficient ‘B’ Suffix Only Nominal Zener Voltage Vz @ Izt Test Current IZT Volts mA
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DO-214AA
SMBJ5382B
SMBJ5383B
SMBJ5384B
SMBJ5385B
SMBJ5386B
SOD-123 marking code 24
zener sot23 marking
MARKING CODE DO-214AC
BZV55C4V3
1N5988B
1N6006B
BZV55C6V2
BZV55C12
1N5994B
BZV55C15
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do-214ac footprint
Abstract: 749B Zener 762b 748B 744B 745B zener diode on 822 1SMA4741 1SMA4742 1SMA4743
Text: WTE POWER SEMICONDUCTORS 1SMA4741 – 1SMA4764 1.0W SURFACE MOUNT ZENER DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! 1.0W Power Dissipation B 11 – 100V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance A Typical IR Less Than 5.0µA Above 11V
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1SMA4741
1SMA4764
SMA/DO-214AC
DO-214AC
MIL-STD-202,
do-214ac footprint
749B Zener
762b
748B
744B
745B
zener diode on 822
1SMA4741
1SMA4742
1SMA4743
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020
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1SMA4737
1SMA200Z
J-STD-020
AEC-Q101
2011/65/EU
2002/96/EC
DO-214AC
JESD22-Bocument
D1309022
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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749196241
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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1SMA4761 R2
Abstract: K13 diode
Text: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020
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1SMA4737
1SMA200Z
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1309022
1SMA4761 R2
K13 diode
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39 do-214ac
Abstract: 743b diode 749B Zener 761-B 748b DIODE
Text: SENSITRON SEMICONDUCTOR 1SMA4741–1SMA4764 1.0W SURFACE MOUNT ZENER DIODE Data Sheet 2677, Rev. B Features Glass Passivated Die Construction 1.0W Power Dissipation 11 –100V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance Typical IR Less Than 5.0µA Above 11V
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1SMA4741
1SMA4764
DO-214AC
MIL-STD-202
SMA/DO-214AC
39 do-214ac
743b diode
749B Zener
761-B
748b DIODE
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zener color codes
Abstract: zener diodes color coded colour code diode zener 1SMA4737 743A ZENER SINGLE COLOR CODE 7.5V zener diode DEVICE MARKING CODE 150A marking c08 sma zener
Text: 1SMA4737 - 1SMA200Z 1.25 Watts Surface Mount Silicon Zener Diode SMA/DO-214AC Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 7.5V
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1SMA4737
1SMA200Z
SMA/DO-214AC
260oC
MIL-STD-750,
EIA-481)
zener color codes
zener diodes color coded
colour code diode zener
743A
ZENER SINGLE COLOR CODE
7.5V zener diode
DEVICE MARKING CODE 150A
marking c08
sma zener
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base
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54S38
Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S
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38510/M
D012510
D011520
D011510
54S38
SN74298
SN74265
54175
NES 1004 naval specification
74L95
Transistor AF 138
07802-1
SN7437
SN54LS195A
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Abstract: No abstract text available
Text: S C IE N T IF IC / n iN I- C IR C U IT S IR E t very low distortion • B O b a sil OCmiS1!? 357 Frequency Mixers LEVEL 17S Models ■ SC C T-74-09-01 RMS-5H LRMS-5H +17 dBm LO, up to +14 dBm RF computer-automated perform ance data typical production unit
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T-74-09-01
201X0
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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irf 405
Abstract: 749621-7 750113-1
Text: 10-18-00 3:17pa D R AW IN G M A DE IN T H IR D ANOLE P R O J E C T ION PIN / PIN 68 34 UPPER BACKSHELL LOWER BACK5HELL From: BMP FAX PIN 1 U IR t C O LO R PIN 35 CHARI A DATE CODE AND MANUFACTURING LOCATION MARKED ON CABLE. 2. CABLE STAPLE HEIGHT TO BE .405.
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A9081
Abstract: No abstract text available
Text: RETENTION BULB 90814-*!* / BULBS CONFIGURATIONS 908l4-*4* USED IN 12-26 T E R M IN A L BULB W ITH C IR C U IT OPTIONS CK T 90814 - * ONLY I C IR C U IT R E T E N T IO N NO S IZ E R E T E N T IO N 8 BULBS PCB TUBE PEGS PACKED TAPE & REEL PA C KED P O L A R IZ IN G
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908l4-
1EH15
A9081
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LG color tv Circuit Diagram schematics
Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS
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MIL-M-38510
38510/MACH
3186J
Z501201
Z012510
Z011510
D022110
D022130
D021110
D021130
LG color tv Circuit Diagram schematics
texas ttl
YJ 162A
Texas Instruments TTL integrated circuits catalog SN74180
AC digital voltmeter using 7107
Sii 9024
MC3123
sn74ls860
SN7490AJ
sn74243
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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