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    IR 60A, 100V MOSFET Search Results

    IR 60A, 100V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IR 60A, 100V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100V 60A Mosfet

    Abstract: 100 amp mosfet 12 VOLT 100 AMP smps smps 12 volt 3 amp smps 12 volt OM90335SF-100 OM90335SF-30 OM90335SF-50 OM90335SF-60 30a13m
    Text: OM90335SF Series THREE PHASE BRUSHLESS MOTOR DRIVER MODULES IN HERMETIC ISOLATED PACKAGES 60 And 100 Volt, 50 To 100 Amp MOSFET Modules, Including Gate Drive For Complete 3-Phase Brushless Motor Control FEATURES • Hermetic Isolated Metal And Ceramic Packages


    Original     		OM90335SF OM90335SF-30/60 OM90335SF-60A OM90335SF-30/60/60A 100V 60A Mosfet 100 amp mosfet 12 VOLT 100 AMP smps smps 12 volt 3 amp smps 12 volt OM90335SF-100 OM90335SF-30 OM90335SF-50 OM90335SF-60 30a13m PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90AM60SCTG PDF

    AG QC TRANSISTOR

    Abstract: Ir 900v 60a APT0406 APT0501 APT0502
    Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90AM60SCTG for00 AG QC TRANSISTOR Ir 900v 60a APT0406 APT0501 APT0502 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60m max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies


    Original     		APTC90AM60SCTG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM50DAM38CTG Boost chopper SiC FWD diode MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NT C2 VBUS SENSE CR1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		APTM50DAM38CTG PDF

    200V 200A mosfet

    Abstract: 400400
    Text: ^ T E L E D Y N E RELAYS MOSD Series Industrial Solid State Products SINGLE MOSFET DC OUTPUT TO 200 AMPS 400 VOLTS PART NUM BERS Package & Chip Type Max Blocking Voltage piv / Line Rating Input Type M O SD SOSO R-DC Input -MOSFET 1 Ö 8 1 ÖÖ Random SS Below and


    OCR Scan     		PDF

    IC AY 5050

    Abstract: No abstract text available
    Text: MOSFD ^ T E L E D Y N E RELAYS Series ULTRA-FAST SWITCHING SINGLE MOSFET DC OUTPUTTO 200 AMPS 200 VOLTS Industrial Solid State Products PART NUM BERS Options Package & Chip Type Max Blocking Voltage piv / Line Rating Input Type gÜfOSF SOSO S5-DC Input


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL130D, FRL130R, FRL130H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 631UIS PDF

    Untitled

    Abstract: No abstract text available
    Text: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		2N7285D, 2N7285R FRM240 O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 42PH0TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD 732UIS PDF

    632-S

    Abstract: No abstract text available
    Text: fn H a r r i s U U FRL230D, FRL230R, S E M I C O N D U C T O R F R IL 2 3 H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL230D, FRL230R, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 632UIS B32PH0T0 632-S PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 5flE D • 4302E71 0045776 536 H H A S 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 T '3 f -/f Features


    OCR Scan     		FRL9130 4302E71 2N7308D, 2N7308R 2N7308H -100V, 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    10KF6

    Abstract: IR2110 MOS-Gated Transistors IRFD9110 AN IR2110 IR 2110 IR2110 design
    Text: International Hü] Rectifier D e sig n T ips DT 92-2A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 HIGH CURRENT BUFFER FOR CONTROL IC S By Laszlo Kiraly INTRODUCTION capacitance of the conducting output transistor


    OCR Scan     		RH89BB, Suite201, 3150utram 10KF6 IR2110 MOS-Gated Transistors IRFD9110 AN IR2110 IR 2110 IR2110 design PDF

    Untitled

    Abstract: No abstract text available
    Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*


    OCR Scan     		FRL230 2N7275D, 2N7275R 2N7275H T0-205AF 100KRAD 300KRAD 3000KRAD 632UIS 632PH0T0 PDF

    Untitled

    Abstract: No abstract text available
    Text: o HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM240 D, R, H 2N7285D, 2N7285R 2N7285H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 16A, MOV, RDS(on) = 0.240 TO-204AA • Second Generation Rad Hard MOSFET Result* From New Design Concept«


    OCR Scan     		FRM240 2N7285D, 2N7285R 2N7285H O-204AA 100KRAD 30QKRAO 1000KRAD 3000KRAD 240UIS PDF

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U FRK460D, FRK460R, FFÎK460H S E M I C O N D U C T O R 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 17A, 500V, RDS on = 0.400ft TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRK460D, FRK460R, K460H O-204AE 400ft 100KRAD 300KRAD 1000KRAD 3000KRAD AN-8831, PDF

    transistor 257A

    Abstract: mosfet 257A
    Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255ft TO-257A A • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRS240 2N7286D, 2N7286R 2N7286H O-257A 255ft 10OKRAD 300KRAD 1000KRAD Useto3000KRAD transistor 257A mosfet 257A PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts


    OCR Scan     		FRL430 2N7281D, 2N7281R 2N7281H 100KRAD 300KRAD 1000KRAD 3000KRAD FRL420PH0T0 PDF

    Untitled

    Abstract: No abstract text available
    Text: sb H A R R IS S E M I C O N D U C T O R FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL234D, FRL234R, FRL234H O-205AF 700ft 100KRAD 300KRAD 1000KRAD 3000KRAD FL234UIS PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7295D, 2N7295R 2N72Q5H h a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H « jRadiation Hardened December1992 N-Channel Power MOSFETs Package Features • 20A, 250V, RDS(on) = 0.170S2 TO-2Q4AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		2N7295D, 2N7295R 2N72Q5H FRK254 r1992 170S2 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    srfe

    Abstract: 1E13
    Text: 33 H A R R IS S E M I C O N D U C T O R FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 7A, 250V, RDS on = 0.70Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD srfe 1E13 PDF

    n 4111

    Abstract: N channel Mosfet 15A 500V
    Text: CSJ H a r r i s U U I S E M I C O N D U C T O R FRE264D, FRE264R, FfíE2G4H 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 250V, RDS on = 0.1300 TO-256AA • Second Generation Rad Hard MOSFET Results From New Design Concept*


    OCR Scan     		FRE264D, FRE264R, O-256AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRE264H n 4111 N channel Mosfet 15A 500V PDF

    Untitled

    Abstract: No abstract text available
    Text: cyj H a r r i s U U S E M I C O N D U C T O R 2N7287D, 2N7287R 2l^72Q7H REGISTRATION PENDING Currently Available as FRM244 D, R, H _ . r. „ . . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 12A, 250V, RDS(on) = 0.400n TQ-204AA


    OCR Scan     		2N7287D, 2N7287R 72Q7H TQ-204AA FRM244 100KRAD 300KRAD 1000KRAD 3000KRAD AN-8831, PDF

    2N7298D

    Abstract: No abstract text available
    Text: Œk H U U a r r is S E M I C O N D U C T O R 2N7298D, 2N7298R 2N72QQH REGISTRATION PENDING Currently Available as FRF450 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 500V, RDS(on) >0.6150 TO-254AA • Second Generation Rad Hard MOSFET Retults From New Design Concept*


    OCR Scan     		2N7298D, 2N7298R 2N72QQH FRF450 O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD /mg/cm01 2N7298D PDF