Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IR 540 MOSFET Search Results

    IR 540 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IR 540 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pwm 8pin

    Abstract: AT1780 J-STD-020A
    Text: AT1780 Preliminary 640kHz/1.2MHz,Low-Noise Step-Up Current-Mode PWM Controller Features General Description • 1.8A,0.21Ω,14V Power MOSFET • Operating input voltage:2.6V to 12V • Adjustable Output from VIN to 14V • 640kHz /1.2MHz pin selectable switching


    Original     		PDF AT1780 640kHz/1 640kHz AT1780 640KHz pwm 8pin J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: AT1780 Preliminary Product Information 640kHz/1.2MHz,Low-Noise Step-Up Current-Mode PWM Controller Features General Description • 1.8A,0.21Ω,14V Power MOSFET • Operating input voltage:2.6V to 12V • Adjustable Output from VIN to 14V • 640kHz /1.2MHz pin selectable switching


    Original     		PDF AT1780 640kHz/1 640kHz AT1780 640KHz

    AT1780

    Abstract: pwm 8pin J-STD-020A marking mm3 8pin
    Text: AT1780 Preliminary Product Information 640kHz/1.2MHz,Low-Noise Step-Up Current-Mode PWM Controller Features General Description • 1.8A,0.21Ω,14V Power MOSFET • Operating input voltage:2.6V to 12V • Adjustable Output from VIN to 14V • 640kHz /1.2MHz pin selectable switching


    Original     		PDF AT1780 640kHz/1 640kHz AT1780 640KHz pwm 8pin J-STD-020A marking mm3 8pin

    IRF840A

    Abstract: MOSFET IRF 1018 Datasheet AN1001
    Text: PD- 91900A IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 1900A IRF840A AN1001) O-220AB Facto10) IRF840A MOSFET IRF 1018 Datasheet AN1001

    4.5v to 100v input regulator

    Abstract: No abstract text available
    Text: PD-91900 IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF PD-91900 IRF840A AN1001) O-220AB 4.5v to 100v input regulator

    IRFz48N MOSFET

    Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
    Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description


    Original     		PDF IRFIZ48N O-220 IRFz48N MOSFET IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent

    IRFIZ48N

    Abstract: IRF1010 IRFI840G IRFZ48N
    Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description


    Original     		PDF IRFIZ48N O-220 IRFIZ48N IRF1010 IRFI840G IRFZ48N

    IRF1010

    Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
    Text: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V


    Original     		PDF IRFIZ48N IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent

    014 IR MOSFET Transistor

    Abstract: IRFBA32N50K
    Text: PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and


    Original     		PDF IRFBA32N50K Super-220TM Diode252-7105 014 IR MOSFET Transistor IRFBA32N50K

    diode 8645

    Abstract: SMPS 30v diode ir 838 IRFBA31N50L offline smps
    Text: PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics


    Original     		PDF IRFBA31N50L Super-220TM D252-7105 diode 8645 SMPS 30v diode ir 838 IRFBA31N50L offline smps

    MOSFET IRF 1018 Datasheet

    Abstract: IRF840AS AN-994 IRF840A IRF840AL
    Text: PD- 91901B IRF840AS IRF840AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PDF 91901B IRF840AS IRF840AL O-262 MOSFET IRF 1018 Datasheet IRF840AS AN-994 IRF840A IRF840AL

    full bridge mosfet smps

    Abstract: MOSFET IRF 1018 Datasheet IRF840A IRF840AS
    Text: PD- 91901A SMPS MOSFET IRF840AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 1901A IRF840AS full bridge mosfet smps MOSFET IRF 1018 Datasheet IRF840A IRF840AS

    Untitled

    Abstract: No abstract text available
    Text: PD- 91901 SMPS MOSFET IRF840AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF840AS

    AN-994

    Abstract: IRF840A IRF840AL IRF840AS DSA0043228 International Rectifier IRF840A
    Text: PD- 91901B IRF840AS IRF840AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PDF 91901B IRF840AS IRF840AL O-262 12-Mar-07 AN-994 IRF840A IRF840AL IRF840AS DSA0043228 International Rectifier IRF840A

    IRFD310

    Abstract: No abstract text available
    Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD310 RFD310 IRFD310

    9936 mosfet

    Abstract: IRFB18N50K IRFBL18N50K
    Text: PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and


    Original     		PDF IRFBL18N50K Dio252-7105 9936 mosfet IRFB18N50K IRFBL18N50K

    mosfet k 1225

    Abstract: IRFD310
    Text: Previous Datasheet Index Next Data Sheet PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω


    Original     		PDF IRFD310 mosfet k 1225 IRFD310

    IRC540 package drawing

    Abstract: No abstract text available
    Text: 4655452 International Rectifier 21T « I N R PD-9.592A IR C 540 _ INTERNATIO NAL R E C T IF IE R HEXFET Power MOSFET • • • • • • • 0D 14526 Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature


    OCR Scan     		PDF MA55M52 DD1M535 IRC540_ IRC540 package drawing

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    IRCZ34 equivalent

    Abstract: 1RCZ44 IRCZ34 C024
    Text: International IO R Rectifier HEX Part Size Number HEXFET Power MOSFETs Cp>v N fF fN A '- C 'S /- . www.irf.com r S iw H r 'C - Vos Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm Equivalent Device Type IRCZ24 HEXSense® Die N-Channel :


    OCR Scan     		PDF 1RCC330 IRCZ24 IRCZ34 IRC530 1RC630 1RC630 IRCZ34 equivalent 1RCZ44 C024

    mosfet fs series

    Abstract: No abstract text available
    Text: • L O W VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE (CONTINUED) Electrical characteristics (TYP.) Type No. w FS5ASH-2 ★ FS5UMH-2 FSSVSH-2 FS5KMH-2 FSIOASH-2 FS10UMH-2 * * ★ ★ ★ Hr FStOVSH-2 FSIOKMH-2 FSIOSMH-2 1 v aas ' ★ ★ ★ ★ ★ ★ ★


    OCR Scan     		PDF FS10UMH-2 FS30ASH-2 FS30UMH-2 FS30VSH-2 FS30KMH-2 FS30SMH-2 FS50UMH-2 FS50VSH-2 FS50KMH-2 FS50SMH-2 mosfet fs series

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays


    OCR Scan     		PDF

    3C043

    Abstract: No abstract text available
    Text: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N 3C04390 3C043