Untitled
Abstract: No abstract text available
Text: IRF7342QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V RDS on = 0.105Ω
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IRF7342QPbF
D-020D
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Untitled
Abstract: No abstract text available
Text: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V
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96128B
IRF7478QPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: END OF LIFE PD - 96112B IRF7413QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free 1 8 S 2 7 D S 3 6 D G 4 5 D Description
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96112B
IRF7413QPbF
JESD47Fâ
J-STD-020Dâ
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PDF
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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PDF
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DG528CK
Abstract: No abstract text available
Text: SILICONIX INC 33E ]> • S2SII735 OülbSbS 7 « S I X DG528/529 m S gS b 8-Channel and Dual t s i - iz 4-Channel Latchable Multiplexers FEATURES TTL Compatible 44 V Power Supply On-Board Address Latches Low rDs ON (270 n typ.) Break-Before-Make Improved ESD Protection > 2500 V
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S2SII735
DG528/529
DQ528/529
DG528
DG528s
16-line
DG528CK
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF7307QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
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IRF7307QPbF
anD-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: END OF LIFE PD – 96114C IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description IRF7805QPbF 8 S 2 7 D S 3 6 D G 4 5 D T o p V ie w
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96114C
IRF7805QPbF
JESD47Fâ
J-STD-020Dâ
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PDF
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DG528CJ
Abstract: 70068 DG529BK SAB 529
Text: DG528/529 Vishay Siliconix Latchable Single 8-Ch/Differential 4-Ch Analog Multiplexers FEATURES BENEFITS APPLICATIONS • Low rDS on : 270 Q • 44-V Power Supply Rating • • Data Acquisition Systems • Microporcessor Bus Compatible • Automatic Test Equipment
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DG528/529
DG528
DG529,
DG528,
DG528CJ
70068
DG529BK
SAB 529
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PDF
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dg528bk
Abstract: No abstract text available
Text: DG528/529 8-Channel and Dual 4-Channel Latchable Multiplexers BENEFITS FEATURES TTL Compatible 44 V Power Supply On-Board Address Latches Low rDS 0 N (270 n Typ.) Break-Before-Make Improved ESD Protection > 2500 V JOT52& APPLICATIONS Easily Interfaced Increased Analog Signal Range
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DG528/529
JOT52&
DG528
DG528s
16-line
dg528bk
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced SSP5N90A Power MOSFET FEATURES B V DSS - Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 . 9 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V B Low Rds(0n) ■ 2.300 £1 (Typ.)
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SSP5N90A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced IRFS140A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V
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IRFS140A
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-3519: Rev 0:3/91 B-Channel Latchable M ultiplexers G eneral Description Features ♦ Low-Power, Monolithic CMOS Design The DG 528/D G529 have break-before-m ake sw itching to prevent m om entary shorting of the input signals. Each device operates with dual supplies ±4.5V to ±20V or a
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DG528/DG529
DG528
DG529
528/D
528/DG
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced SSW/I5N90A Power MOSFET FEATURES BV dss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V
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SSW/I5N90A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced SSH5N90A Power MOSFET FEATURES B V DSS - • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 .9 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V B Low Rds(0n) ■ 2.300 £1 (Typ.)
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SSH5N90A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3
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IRF7815PbF
110mH,
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IRFD9014
Abstract: IR 529 MOSFET irfd9014 i diode 5J 7A
Text: PD-9.696A International S Rectifier IRFD9014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V dss - -60V F*DS on = 0.50Í2
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PDF
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Untitled
Abstract: No abstract text available
Text: END OF LIFE PD - 96105B IRF7306QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2
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96105B
IRF7306QPbF
JESD47Fâ
J-STD-020Dâ
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PDF
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4801 MOSFET
Abstract: IR 529 MOSFET TC 9151 P wiper motor 12v dc ST72334J4 dpak mosfet motor control DC 12v LDP24A relay 4130 globe DC motors D 4515
Text: Complete Standard Solutions for Automotive DC-Motor Control TD340 H-Bridge Driver Application example: Smart Wiper System With ST’s TD340, wiper systems are not only simpler and more reliable, but they can have more functionality, too. A complete smart wiper solution, which features current monitoring and active
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TD340
TD340,
STD30NF03L
STx60NF03L
STD60NF55L
STD30NF06L
TD340.
FLTD340/1201
4801 MOSFET
IR 529 MOSFET
TC 9151 P
wiper motor 12v dc
ST72334J4
dpak mosfet motor control DC 12v
LDP24A
relay 4130
globe DC motors
D 4515
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1
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96102B
IRF7105QPbF
JESD47Fâ
J-STD-020Dâ
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PDF
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f12n10l
Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits
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RFM12N08L,
RFM12N10L,
RFP12N08L,
RFP12N10L
92CS-33741
RFM12N08L
RFM12N10L
RFP12N08L
RFP12N10L*
l92CS-37213
f12n10l
f12N08L
F12N08L FET
f12n10
f12n08
f12n
"Voltage to Current Converter"
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PDF
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IRFS140A
Abstract: No abstract text available
Text: Advanced IRFS140A P o w e r MOSFET FEATURES b v D SS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ^ D S o n = ID
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IRFS140A
IRFS140A
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PDF
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ur4120
Abstract: RURD4120S9A TA49036 RURD4120 RURD4120S
Text: RURD4120, RURD4120S S E M I C O N D U C T O R 4A, 1200V Ultrafast Diodes April 1995 Features Packages • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . <70ns JEDEC STYLE TO-251 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
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RURD4120,
RURD4120S
O-251
O-252
RURD4120
TA49036)
175oC
ur4120
RURD4120S9A
TA49036
RURD4120S
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PDF
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SMBJ5A
Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Text: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage
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ST1284
RS232
DDR110
PowerSO-10,
ISOWATT218,
SMBJ5A
irf640m
LM358 laser driver
sod ic ld1117 3.3v
4801 MOSFET
220ac to 5v ac inverter CIRCUIT DIAGRAM
ST2310HI
circuit diagram adsl modem board
hp laser printer 600v
TL431 928
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PDF
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14MQ
Abstract: IC-441 IR 529 MOSFET
Text: General Description Features The MIC4416 and MIC4417 IttyBitty low-side MOSFET drivers are designed to switch an N-channel enhancementtype MOSFET from a TTL-compatible control signal in lowside switch applications. The MIC4416 is noninverting and the MIC4417 is inverting. These drivers feature short delays
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MIC4416
MIC4417
OT-143
MIC4416/7
25in2
600mW.
14MQ
IC-441
IR 529 MOSFET
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PDF
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