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    IR 30 D1 DIODE Search Results

    IR 30 D1 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    IR 30 D1 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR 30 D1

    Abstract: No abstract text available
    Text: 2SK1609 Switching Diodes MA153, MA153A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Series connection in package 1 0.95 ● +0.2 Small capacity between pins, Ct


    Original     		PDF 2SK1609 MA153, MA153A MA153 MA153A O-236 SC-59 IR 30 D1

    IR 30 D1

    Abstract: MA3X153 MA3X153A 133D1
    Text: Switching Diodes MA3X153, MA3X153A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Small terminal capacitance, Ct • Two diodes are connected in series in the package 1.5 0.95 + 0.2 2.9 − 0.05 • Features


    Original     		PDF MA3X153, MA3X153A MA3X153 IR 30 D1 MA3X153 MA3X153A 133D1

    MA156

    Abstract: No abstract text available
    Text: 2SK963 Switching Diodes MA156 Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 board 1.0 0.85 4.5±0.1 4.1±0.2 fixed in a self-standing pattern after insertion in the printed-circuit 2.4±0.2 2.0±0.2 3.5±0.1 M type package for automatic and manual insertion, which can be


    Original     		PDF 2SK963 MA156 SC-71 MA156

    MA153

    Abstract: MA153A MA3X153 MA3X153A
    Text: Switching Diodes MA3X153 MA153 , MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 0.4±0.2 2 1 (0.65) • Small terminal capacitance Ct


    Original     		PDF MA3X153 MA153) MA3X153A MA153A) SC-59 MA153 MA153A MA3X153 MA3X153A

    D2 Package

    Abstract: diodes ir MA153 MA153A MA3X153 MA3X153A
    Text: Switching Diodes MA3X153 MA153 , MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 0.4±0.2 2 1 (0.65) • Small terminal capacitance Ct


    Original     		PDF MA3X153 MA153) MA3X153A MA153A) D2 Package diodes ir MA153 MA153A MA3X153 MA3X153A

    IR diode D4

    Abstract: diode TA 20-08 IR 30 D1
    Text: SEMICONDUCTOR KDS127U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package B B1 6 2 5 3 4 C A A1


    Original     		PDF KDS127U IR diode D4 diode TA 20-08 IR 30 D1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B C 6 2 5 3 4 D A 1 A1 FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package


    Original     		PDF KDS127E

    IR diode D4

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Low Forward Voltage C A 1 6 2 5 3 4 A1 Small Total Capacitance C Fast Reverse Recovery Time D Ultra- Small Surface Mount Package MAXIMUM RATING Ta=25


    Original     		PDF KDS127E IR diode D4

    KDS127U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS127U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES B B1 Low Forward Voltage Fast Reverse Recovery Time 1 6 2 5 3 4 A D CHARACTERISTIC SYMBOL RATING UNIT VRM 80 V Reverse Voltage VR 80 V Maximum Peak) Forward Current


    Original     		PDF KDS127U KDS127U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low Forward Voltage C A 6 2 5 3 4 D Ultra- Small Surface Mount Package 1 A1 Small Total Capacitance C Fast Reverse Recovery Time MAXIMUM RATING Ta=25


    Original     		PDF KDS127E

    MA153

    Abstract: MA153A MA3X153 MA3X153A R10D2
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) MA3X153 MA153) MA3X153A MA153A) SC-59 MA153 MA153A MA3X153 MA3X153A R10D2

    MA153

    Abstract: MA153A MA3X153 MA3X153A
    Text: Switching Diodes MA3X153, MA3X153A MA153, MA153A Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 2 1 (0.65) • Small terminal capacitance, Ct


    Original     		PDF MA3X153, MA3X153A MA153, MA153A) MA3X153 SC-59 MA153 MA153A MA3X153 MA3X153A

    MA3X153

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) MA3X153 MA153) MA3X153A MA153A) MA3X153 MA3X153A

    panasonic ma diodes sc-59 Marking

    Abstract: MA153 MA153A MA3X153 MA3X153A
    Text: Switching Diodes MA3X153, MA3X153A MA153, MA153A Silicon epitaxial planar type Unit : mm 0.40+0.10 –0.05 For switching circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Small terminal capacitance, Ct • Two diodes are connected in series in the package


    Original     		PDF MA3X153, MA3X153A MA153, MA153A) MA3X153 panasonic ma diodes sc-59 Marking MA153 MA153A MA3X153 MA3X153A

    IR 30 D1

    Abstract: marking code B2D marking code 3S diode marking 74 MARKING CODE VF marking code 4 marking d2 SOT d231 marking b1d diode a5d
    Text: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount package, designed for fast switching applications


    Original     		PDF OT-323 IR 30 D1 marking code B2D marking code 3S diode marking 74 MARKING CODE VF marking code 4 marking d2 SOT d231 marking b1d diode a5d

    IR 30 D1

    Abstract: semiconductor case marking 16 marking db2 marking db2 sot23 DA5 diode diode marking 74 DA5 marking marking code R5 sot23 sot23 marking code 16 schottky marking code 16
    Text: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S TM Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.


    Original     		PDF OT-23 16-June IR 30 D1 semiconductor case marking 16 marking db2 marking db2 sot23 DA5 diode diode marking 74 DA5 marking marking code R5 sot23 sot23 marking code 16 schottky marking code 16

    MA153

    Abstract: MA153A MA3X153 MA3X153A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 (0.65)


    Original     		PDF 2002/95/EC) MA3X153 MA153) MA3X153A MA153A) MA153 MA153A MA3X153 MA3X153A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C Symbol


    Original     		PDF 2002/95/EC) MA3X153 MA153) MA3X153A MA153A)

    MA153

    Abstract: MA153A MA3X153 MA3X153A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) MA3X153 MA153) MA3X153A MA153A) MA153 MA153A MA3X153 MA3X153A

    marking b1d

    Abstract: diode marking 74 marking code DIODE R3 marking code B2D marking code 3c
    Text: CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini surface mount package, designed


    Original     		PDF OT-323 100mA marking b1d diode marking 74 marking code DIODE R3 marking code B2D marking code 3c

    Untitled

    Abstract: No abstract text available
    Text: CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini surface mount package, designed


    Original     		PDF OT-323 100mA

    IR 30 D1

    Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
    Text: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)


    OCR Scan     		PDF b5Oil0037002 1N625 DO-35 1N626 1N627 1N628 1N629 IR 30 D1 BAX17 FDH444 1N3070 1N658

    IR 30 D1

    Abstract: BAX17 FDH444 1N625 1N626 1N627 1N628 1N629 1N658 1N659
    Text: NATL SEMICOND DISCRETE H E D | High Voltage Diodes Glass Package D evice No. P ackage No. Vrrm V Min 1N625 DO-35 30 1N626 DO-35 50 1N627 DO-35 100 1N628 DO-35 150 1N629 DO-35 200 1N658 DO-35 120 1N659 DO-35 60 1N660 DO-35 120 1N661 DO-35 240 Ir nA Max 1000


    OCR Scan     		PDF fcSQ1130^ 00370G2 T-01-01 1N625 DO-35 1N626 1N627 1N628 IR 30 D1 BAX17 FDH444 1N629 1N658 1N659

    1S44

    Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
    Text: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200


    OCR Scan     		PDF b501130 T-01-01 1N461A DO-35 1N462A 1N463A 1N659 1S44 1N661 1S920 1N660 1S921