Untitled
Abstract: No abstract text available
Text: Comchip Small Signal Schottky Diodes SMD Diode Specialist CDBT0230-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen Free SOT-23 Features 0.119 3.04 0.110(2.80) -Small suface mounting type. 3 -Low IR.(IR=10uA Typ.) 0.056(1.40) 0.047(1.20)
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CDBT0230-HF
OT-23
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: Comchip Small Signal Schottky Diodes SMD Diode Specialist CDBT0230-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen Free SOT-23 Features 0.119 3.04 0.110(2.80) -Small suface mounting type. 3 -Low IR.(IR=10uA Typ.) 0.056(1.40) 0.047(1.20)
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CDBT0230-HF
OT-23
OT-23,
MIL-STD-750,
QW-JA003
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Untitled
Abstract: No abstract text available
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: contact@osa-opto.com Series 330 - 1206 with Lens IR high intensity 880 nm Features - with lens, mounting from backside of PCB
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3065
Abstract: No abstract text available
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: contact@osa-opto.com Series 170 - 0805 Standard IR high intensity 880 nm Features - size 0805: 1,9(L) x 1,2(W) x 1,2(H) mm
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IR LED 810 nm
Abstract: No abstract text available
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: contact@osa-opto.com preliminary Series 330 - 1206 with Lens IR high intensity 660-850 nm Features - with lens, mounting from backside of PCB
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td 880
Abstract: No abstract text available
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: contact@osa-opto.com Series 150 - 1206 Standard IR high intensity 880 nm Features - size 1206: 3,2(L) x 1,6(W) x 1,2(H) mm
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Untitled
Abstract: No abstract text available
Text: Low IR SMD Schottky Barrier Diode CDBZ0130R-HF Io = 100 mA VR = 30 Volts RoHS Device Halogen Free Features 0201/DFN0603 - Low reverse current. 0.026 0.670 0.022(0.570) - Low forward voltage. - Ultra small mold type. 0.015(0.370) 0.011(0.270) Mechanical data
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CDBZ0130R-HF
0201/DFN0603
0201/DFN0603
MIL-STD-750,
QW-JB058
DFN0603)
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KDR735U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR735U TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. FEATURES E M ・Low Reverse Current : IR=0.1 A Typ. C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V
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KDR735U
KDR735U
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KDR735U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR735U TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. FEATURES E M ・Low Reverse Current : IR=0.1 A Typ. CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Reverse Voltage VR 30 V
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KDR735U
200mA
KDR735U
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Untitled
Abstract: No abstract text available
Text: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. EN/DECODER 3 态 59,049 码 30 秒自动断电 单键发射 3-STATE 59,049 CODES 30 SECOND POWER OFF DIRECT DATA TRANSMIT FEATURES 功能叙述 • Built-in IR carrier ─ suffix-I.
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Abstract: No abstract text available
Text: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. EN/DECODER 3 態 59,049 碼 30 秒自動斷電 單鍵發射 3-STATE 59,049 CODES 30 SECOND POWER OFF DIRECT DATA TRANSMIT FEATURES 功能敘述 • Built-in IR carrier ─ suffix-I.
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Untitled
Abstract: No abstract text available
Text: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. EN/DECODER 3 態 59,049 碼 30 秒自動斷電 單鍵發射 3-STATE 59,049 CODES 30 SECOND POWER OFF DIRECT DATA TRANSMIT FEATURES 功能敘述 • Built-in IR carrier ― suffix-I.
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HT6220A
Abstract: HT6222A transistor k49 transistor k58 HT6221A MS-013 transistor k41 k27 transistor transistor k61 transistor k46
Text: HT6220A/HT6221A/HT6222A Multi-Purpose Encoders Features • Operating voltage: 2.0V~3.6V · Maximum active keys · DOUT with 38kHz carrier for IR medium - HT6220A: 30 keys - HT6221A: 32 keys - HT6222A: 64 keys · Low standby current · Minimum transmission word: one word
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HT6220A/HT6221A/HT6222A
38kHz
HT6220A:
HT6221A:
HT6222A:
16-bit
16-pin
20-pin
HT6220A
HT6222A
transistor k49
transistor k58
HT6221A
MS-013
transistor k41
k27 transistor
transistor k61
transistor k46
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M32 250C fuse
Abstract: electronic transformer halogen 12v 50W 220V LED Bulb circuit diagram t8 36w electronic ballast vossloh specification for 11W G23 Pin CFL bulb xenon arc lamp ignitor metal halide electronic ballast circuit 150 ELECTRONIC BALLAST DIAGRAM 400W 1W HIGH BRIGHT LED 230V CIRCUITS ELECTRONIC BALLAST DIAGRAM 28w
Text: Contents GE Lighting Incandescent Reflector Heat Lamps 3 Halogen Precise MR11, Precise™ ConstantColor™ MR16, Precise™ Bright MR16, Precise™ Alutech™ MR16, TAL 50, UV-Control CeriTite™, DEQ, Halogen IR™ DEQ, Haloglobe & BTT, Halo T, PAR 30
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FIN-01300
479-2-1a
M32 250C fuse
electronic transformer halogen 12v 50W
220V LED Bulb circuit diagram
t8 36w electronic ballast vossloh
specification for 11W G23 Pin CFL bulb
xenon arc lamp ignitor
metal halide electronic ballast circuit 150
ELECTRONIC BALLAST DIAGRAM 400W
1W HIGH BRIGHT LED 230V CIRCUITS
ELECTRONIC BALLAST DIAGRAM 28w
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smd diode marking code g
Abstract: A11 smd diode marking w1 TSC Date Code marking SMD diode MARKING CODE 10s smd diode marking Av
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
C/10s
smd diode marking code g
A11 smd
diode marking w1
TSC Date Code marking
SMD diode MARKING CODE 10s
smd diode marking Av
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Untitled
Abstract: No abstract text available
Text: Product Summary Per Leg VRRM (V) IO (A) 100 30 VF(MAX) (V) @ +25°C 0.78 SBRT60U100CT Green 60A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Features and Benefits • IR(MAX) (mA) @ +25°C 0.3 Reduced ultra-low forward voltage drop (VF); better efficiency
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SBRT60U100CT
O220AB
SBRT60U100CT
DS36631
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Untitled
Abstract: No abstract text available
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
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MBRF1060CT
Abstract: No abstract text available
Text: MBRF1030CT- MBRF1060CT Green 10A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits MBRF1030CT – MBRF1045CT Per Leg VRRM (V) IO (A) 30 - 45 5 VF (MAX) (V) @ +25°C 0.65 IR (MAX) (mA) @ +25°C 0.1 MBRF1050CT – MBRF1060CT (Per Leg) VRRM (V)
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MBRF1030CT-
MBRF1060CT
MBRF1030CT
MBRF1045CT
MBRF1050CT
AEC-Q101
MBRF1030CT-MBRF1060CT
DS35378
MBRF1060CT
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F30JC10
Abstract: F20JC f20jc10 F15JC10 F30JC F30SC3L
Text: Schottky Barrier Diodes High frequency rectifying Twin Diodes Electrical C haracteristics A b solute M axim um Ratings Type No. DF30SC3ML V rm lo Conditions Tc [V ] [A ] 30 4M 40 DF30PC3M 30 SF30S C 3L 30 40 4 30 30 30 Vf Ir I fsm Tstg Tj m ax Conditions
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DF30SC3ML
DF30PC3M
SF30S
F30JC
F40SC
F40PC
S60SC3M
F15JC
F20JC
F30JC10
f20jc10
F15JC10
F30SC3L
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MTL ICC 311
Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
Text: - 84- 1 & tíü ! 2È J l 5IJ •it ¥ É’J & ti « >CTí=7? H D SP-5621 H D SP-5623 L N 526RG A - HP & T ft 14 Jft [Ta= 2 o O «ist;!: If Vjf i V i im A : 3 30 0.56 G aP S i! m m - fcJ£ W.i$ R liŒ A/. A X Ir Vjr Iy If Ir Ir nm '' !nm ' ;m A ; ¡m cd ' ! rn A 1 i. V j (m A : '.„A '
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HDSP-5621
HDSP-5623
LN526RGA
P2X14-2BÂ
MD0657M-R)
MD2057C-R)
MD2057C-RG)
SL-Q225
MTL ICC 311
SL-2199
SL-2225
hp 5082-7756
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
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RC6564AV
Abstract: R101
Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC6564A IF-to-Digital C onverter Features Integrated IF-to-Digital™ conversion IF bandwidth from 30 to 80MHz 40MHz 8 bit ADC Operating range between 8.5V to 13.2V Demodulation of 64QAM constellations
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RC6564A
80MHz
40MHz
64QAM
44-pin
DS30006564A
RC6564AV
R101
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Untitled
Abstract: No abstract text available
Text: P A IR C H II-D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC4277 Dual Precision Operational Amplifier Features • • • • • • • • • High DC precision Very low VOS - 30 raV Very low VOS drift - 0.3 mVfC High open-loop gain - 5000 V/raV
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RC4277
RC4277
RC4077,
OP-07
OP-77
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D s e m ic o n d u c t o r tm w w w .fa ir c h ild s e m i.c o m RC6564A I F -t o -D ig ita l C o nve rte r Features Integrated IF-to-Digital™ conversion IF bandwidth from 30 to 80MHz 40MHz 8 bit ADC Operating range between 8.5V to 13.2V
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RC6564A
80MHz
40MHz
64QAM
DS30006564A
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