IR 1838
Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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Original
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
HFA06TB120
IR 1838
IRFP250 datasheet
B120
HFA06TB120
IRFP250
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PDF
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IR 1838 T
Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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Original
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
12-Mar-07
IR 1838 T
B120
HFA06TB120
IRFP250
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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Original
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
08-Mar-07
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PDF
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IR 1838
Abstract: irm 1838 HFA30PB120
Text: Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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Original
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HFA30PB120
490nC
HFA30PB120
IR 1838
irm 1838
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PDF
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IR 1838 3v
Abstract: IR 1838 irm 1838 DIODE 76A HFA16TB120
Text: Preliminary Data Sheet PD -2.492 05/97 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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Original
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HFA16TB120
260nC
HFA16TB120
IR 1838 3v
IR 1838
irm 1838
DIODE 76A
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PDF
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IR 1838 3v
Abstract: IR 1838 HFA16PB120 CECC40101
Text: PD -2.364A HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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Original
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HFA16PB120
260nC
HFA16PB120
IR 1838 3v
IR 1838
CECC40101
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PDF
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lt 332 diode
Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE
Text: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V
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Original
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IRG4ZH50KD
SMD-10
lt 332 diode
GC 72 smd diode
IRG4ZH50KD
transistor smd MJ 145
lt 39 diode smd
smd-10 weight
Diode smd 2f
T4 diode smd
SMD-10 PACKAGE
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PDF
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IR 1838 3v
Abstract: IR 1838 HFA16TB120S
Text: Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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Original
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HFA16TB120S
260nC
HFA16TB120S
IR 1838 3v
IR 1838
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PDF
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IR 1838 T
Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
Text: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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Original
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IRG4PH50UD
O-247AC
IR 1838 T
IGBT W 20 NK 50 Z
IRG4PH50UD
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PDF
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IRG4PH50UD
Abstract: IR 1838 T
Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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Original
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1573A
IRG4PH50UD
O-247AC
IRG4PH50UD
IR 1838 T
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PDF
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smd TRANSISTOR code marking 2F
Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Text: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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Original
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PD-20605
HFA16TB120S
260nC
HFA16TB120S
smd TRANSISTOR code marking 2F
SMD TRANSISTOR MARKING 9bb
TRANSISTOR SMD 9bb
IR 1838 T
smd marking dt2
TRANSISTOR SMD MARKING CODE kh
irm 1838
IR 1838 3v
IR 1838 T datasheet
IR 1838
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PDF
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IRG4PH50UD
Abstract: IR 1838 T
Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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Original
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1573A
IRG4PH50UD
O-247AC
p52-7105
IRG4PH50UD
IR 1838 T
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PDF
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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OCR Scan
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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PDF
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C2335
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
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OCR Scan
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IRG4PH50UD
O-247AC
C2335
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PDF
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|
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vs 1838 b
Abstract: 98-I
Text: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies
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OCR Scan
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IRG4PF50WD
O-247AC
vs 1838 b
98-I
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PDF
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TL 1838
Abstract: IRG4PH50KD
Text: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,
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OCR Scan
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IRG4PH50KD
10fis,
TL 1838
IRG4PH50KD
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PDF
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2SC1811
Abstract: 2SA896 138D 2SA1015
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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250nS
190nS
2SC1811
2SA896
138D
2SA1015
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PDF
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C1030 transistor
Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses
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OCR Scan
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IRGPH50KD2
-10jjs
C-1035
O-247AC
C-1036
C1030 transistor
c1036 transistor
transistor c1032
c1032
IC of XOR GATE
C1030
c1036
c1035
C-1032
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PDF
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Untitled
Abstract: No abstract text available
Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,
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OCR Scan
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IRG4PH50UD
55M52
002023b
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PDF
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Untitled
Abstract: No abstract text available
Text: International Rectifier IGR PD- 91575A IRG4PH50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 1200V • High short circuit rating o ptim ized for m otor control, tsc =10 as, V Cc = 7 2 0 V , T j = 1 2 5 ° C ,
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OCR Scan
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1575A
IRG4PH50KD
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PDF
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IR 1838 T
Abstract: IR 1838 T transistor irm 1838 IR 1838
Text: Preliminary Data Sheet PD -2.492 05/97 International IO R Rectifier H F A 16T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche
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OCR Scan
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HFA16TB120
IR 1838 T
IR 1838 T transistor
irm 1838
IR 1838
|
PDF
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transistor c429
Abstract: diode 47C hfa30pb120
Text: International lO R Rectifier HEXFRED Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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HFA30PB120
490nC
HFA30PB120
transistor c429
diode 47C
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PDF
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IR 1838 T
Abstract: 1838 t
Text: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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HFA16TB120S
260nC
HFA16TB120S
IR 1838 T
1838 t
|
PDF
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TL 1838
Abstract: DS9668CN DS9666CN DS2002CJ DS9667 DS2001 DS2002 DS9666 J16A DS2002CN
Text: DS2001/DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 High Current/Voltage Darlington Drivers General Description The DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature
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OCR Scan
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DS2001
/DS9665/DS2002/DS9666
DS2003/DS9667/DS2004/DS9668
DS2001/DS9665/DS2002/DS9666/DS2003/DS9667
DS2004/DS9668
/DS9665
DS2002/DS9666
DS2004/DS9668
TL/F/9647-4
TL 1838
DS9668CN
DS9666CN
DS2002CJ
DS9667
DS2002
DS9666
J16A
DS2002CN
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PDF
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