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    IPP126N10N3 G Price and Stock

    Infineon Technologies AG IPP126N10N3GXKSA1

    MOSFET N-CH 100V 58A TO220-3
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    DigiKey IPP126N10N3GXKSA1 Tube 500
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    • 1000 $0.84508
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    Newark IPP126N10N3GXKSA1 Bulk 28 1
    • 1 $0.73
    • 10 $0.73
    • 100 $0.669
    • 1000 $0.618
    • 10000 $0.574
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    Bristol Electronics IPP126N10N3GXKSA1 26
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    Rochester Electronics IPP126N10N3GXKSA1 6 1
    • 1 $0.7397
    • 10 $0.7397
    • 100 $0.6953
    • 1000 $0.6287
    • 10000 $0.6287
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    TME IPP126N10N3GXKSA1 121 1
    • 1 $1.37
    • 10 $1.08
    • 100 $0.95
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    • 10000 $0.95
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    Infineon Technologies AG IPP126N10N3G

    Trans MOSFET N-CH 100V 58A 3-Pin TO-220 Tube - Bulk (Alt: IPP126N10N3G)
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    Avnet Americas IPP126N10N3G Bulk 4 Weeks 1
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    IPP126N10N3G Tube 4 Weeks 1
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    Rochester Electronics IPP126N10N3G 68 1
    • 1 $0.4521
    • 10 $0.4521
    • 100 $0.425
    • 1000 $0.3843
    • 10000 $0.3843
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    IPP126N10N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPP126N10N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 58.0 A; Original PDF
    IPP126N10N3GXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 58A TO220-3 Original PDF

    IPP126N10N3 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


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    PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


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    PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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