IPP086N10N3 G Search Results
IPP086N10N3 G Price and Stock
Infineon Technologies AG IPP086N10N3GHKSA1MOSFET N-CH 100V 80A TO220-3 |
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IPP086N10N3GHKSA1 | Tube | 500 |
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IPP086N10N3GHKSA1 | 150 | 1 |
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Infineon Technologies AG IPP086N10N3GXKSA1MOSFET N-CH 100V 80A TO220-3 |
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IPP086N10N3GXKSA1 | Tube | 1 |
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IPP086N10N3GXKSA1 | 394 | 39 |
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IPP086N10N3GXKSA1 | 150 | 16 Weeks | 1 |
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IPP086N10N3GXKSA1 | Bulk | 451 | 1 |
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IPP086N10N3GXKSA1 | 1 |
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IPP086N10N3GXKSA1 | Tube | 394 | 0 Weeks, 1 Days | 1 |
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IPP086N10N3GXKSA1 | 17 Weeks | 500 |
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Infineon Technologies AG IPP086N10N3GXKTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1) |
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IPP086N10N3GXK | Tube | 16 Weeks | 1,000 |
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Infineon Technologies AG IPP086N10N3 GMOSFETs N-Ch 100V 80A TO220-3 OptiMOS 3 |
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IPP086N10N3 G | 834 |
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Infineon Technologies AG IPP086N10N3G100V,80A,N Channel Power MOSFET |
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IPP086N10N3G | 25 | 1 |
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IPP086N10N3 G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPP086N10N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.6 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; | Original | |||
IPP086N10N3GHKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO220-3 | Original | |||
IPP086N10N3GXKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO220-3 | Original |