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    IPI041N12N3 G Price and Stock

    Infineon Technologies AG IPI041N12N3GAKSA1

    MOSFET N-CH 120V 120A TO262-3
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    DigiKey IPI041N12N3GAKSA1 Tube 464 1
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    Avnet Americas IPI041N12N3GAKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPI041N12N3GAKSA1
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    Verical IPI041N12N3GAKSA1 325 128
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    Rochester Electronics IPI041N12N3GAKSA1 325 1
    • 1 $2.5
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    TME IPI041N12N3GAKSA1 1
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    Vyrian IPI041N12N3GAKSA1 2,321
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    Infineon Technologies AG IPI041N12N3 G

    MOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3
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    Mouser Electronics IPI041N12N3 G 486
    • 1 $4.94
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    IPI041N12N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI041N12N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 120.0 V; RDS (on) (max) (@10V): 4.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; Original PDF
    IPI041N12N3GAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 120A TO262-3 Original PDF

    IPI041N12N3 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

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    Abstract: No abstract text available
    Text: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 PDF