IPD15-N06S2L-64 Search Results
IPD15-N06S2L-64 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TIPD151 |
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16-bit 400KSPS 4-Ch. Multiplexed Data Acquisition Ref Design for High Voltage Inputs, Low Distortion |
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TIPD156 |
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Low-Drift Bidirectional Single-Supply Low-Side Current Sensing Reference Design |
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IPD15-N06S2L-64 Price and Stock
Infineon Technologies AG IPD15N06S2L64ATMA2MOSFET N-CH 55V 19A TO252-31 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD15N06S2L64ATMA2 | Cut Tape | 1,668 | 1 |
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IPD15N06S2L64ATMA2 | Reel | 12 Weeks | 2,500 |
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IPD15N06S2L64ATMA2 | 65 |
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IPD15N06S2L64ATMA2 | 2,195 | 71 |
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IPD15N06S2L64ATMA2 | Cut Strips | 1,707 | 12 Weeks | 1 |
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IPD15N06S2L64ATMA2 | Cut Tape | 26,270 | 1 |
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IPD15N06S2L64ATMA2 | 125,081 | 1 |
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IPD15N06S2L64ATMA2 | Cut Tape | 2,195 |
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IPD15N06S2L64ATMA2 | 13 Weeks | 2,500 |
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IPD15N06S2L64ATMA2 | 5,000 | 1 |
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Infineon Technologies AG IPD15N06S2L64ATMA1MOSFET N-CH 55V 19A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD15N06S2L64ATMA1 | Reel | 2,500 |
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IPD15N06S2L64ATMA1 | 300 | 1 |
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Infineon Technologies AG IPD15N06S2L64ATMA2.Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:47W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IPD15N06S2L64ATMA2. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD15N06S2L64ATMA2. | Reel | 2,500 |
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Infineon Technologies AG IPD15N06S2L-6419 A, 55 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD15N06S2L-64 | 1,535 |
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IPD15N06S2L-64 | 918 |
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IPD15N06S2L-64 | Reel | 20,000 | 2,500 |
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IPD15N06S2L-64 | 5,000 |
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Infineon Technologies AG IPD15N06S2L64OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD15N06S2L64 | 2,815 |
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IPD15-N06S2L-64 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPD15N06S2L-64 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 64.0 mOhm; ID (max): 19.0 A; RthJC (max): 3.2 K/W; | Original | |||
IPD15N06S2L64ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 19A TO252-3 | Original | |||
IPD15N06S2L64ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL_55/60V | Original |