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    053N08N

    Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
    Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPD053N08N3 IPD06CN08N PG-TO252-3 053N08N 053N08N IPD053N08N3 G JESD22 d90a

    Untitled

    Abstract: No abstract text available
    Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 80 V RDS(on),max 5.3 mW ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPD053N08N3 IPD06CN08N PG-TO252-3 053N08N

    Untitled

    Abstract: No abstract text available
    Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 80 V RDS(on),max 5.3 mW ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPD053N08N3 IPD06CN08N IEC61249-2-21 PG-TO252-3 053N08N