053N08N
Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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Original
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PDF
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IPD053N08N3
IPD06CN08N
PG-TO252-3
053N08N
053N08N
IPD053N08N3 G
JESD22
d90a
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Untitled
Abstract: No abstract text available
Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 80 V RDS(on),max 5.3 mW ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
|
Original
|
PDF
|
IPD053N08N3
IPD06CN08N
PG-TO252-3
053N08N
|
Untitled
Abstract: No abstract text available
Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 80 V RDS(on),max 5.3 mW ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
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Original
|
PDF
|
IPD053N08N3
IPD06CN08N
IEC61249-2-21
PG-TO252-3
053N08N
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