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    IPD038N06N3

    Abstract: 038n06n JESD22
    Text: Type IPD038N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 60 V R DS(on),max 3.8 mΩ ID 90 A • N-channel, normal level previous engineering sample code:


    Original     		PDF IPD038N06N3 IPD04xN06N PG-TO252-3 038N06N 038n06n JESD22

    038n06n

    Abstract: JESD22
    Text: Type IPD038N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 60 V R DS(on),max 3.8 mΩ ID 90 A • N-channel, normal level previous engineering sample code:


    Original     		PDF IPD038N06N3 IPD04xN06N PG-TO252-3 038N06N 038n06n JESD22