IR135DM12C
Abstract: No abstract text available
Text: Part Number 3& •NTKiNATIO««!. H.C '¡Ml> International IOR Rectifier Diodes www.irf.com Side Dimension >T{AV inches) W VRM 00 Anode metallization Cathode metallization Quantity per Carrier Equivalent Finished Products Die IR135DM08C IR135DM12C IR180DM08C
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IR135DM08C
IR135DM12C
IR180DM08C
IR180DM
R230DM08C
IR230DM12C
IR340DM08C
IR340DM12C
IR350DM08C
IR350DM12C
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
T0220AB
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diode 6300
Abstract: No abstract text available
Text: International IOR Rectifier Phase Control SCR .'•NN V>h5.a »V I vm/ Part Number 'ism High-Voltage °q (a (A) Vdrm Diode Rating* 't(AV) @ Tc (V) (V) (A) (b) (A) *Q)C(DC) (K/W) Notes Fax on Case Demand Outline | Number Key Thyristor / High Voltage Diode
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RKH170-04
1RKH170-08
1RKH170-12
IRKH170-14
RKHI70-I6
IRKH230-08
IRKH230-12
IRKH230-I6
IRKH230-18
IRKH230-20
diode 6300
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RKU91-04
Abstract: b25ds120 ior irkt91-12 B25CS120 ior e78996 IRKT IRKT THYRISTOR THYRISTOR MODULE e78996 B25CS60 E78996 ior
Text: International IOR ]Rectifier Power Modules Thyristor/Thyristor 6 P171 P172 P173 P174 P175 P471 P472 P473 P474 P475 Part Number Vr r m (7) (8) VDRM (V) — — — — — — — — - - >T(AV) @ Tc (A) (°C) RthJC DC Case Outline Number (°C/W) (9) •t s m 0 )
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B25DS10
B25DS20
B25DS40
B25DS60
B25DS80
B25DS100
B25DS120
IRKT26-04
IRKT26-06
IRKT26-08
RKU91-04
ior irkt91-12
B25CS120
ior e78996
IRKT
IRKT THYRISTOR THYRISTOR MODULE
e78996
B25CS60
E78996 ior
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IRKCL91-06S02
Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Text: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02
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B40DL10S02
B40DL20S02
B40DL40S02
B40DL60S02
B40DL10S05
B40DL20S05
B40DL40S05
B40DL60S05
B40DL80S05
B40DL100S05
IRKCL91-06S02
ior e78996
158lf
IRKJL91-02S02
E78996 ior
fm50h
1406 diode
1RKC
IRKCL91-04S02
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0D3G2
Abstract: No abstract text available
Text: Bulletin 127141 rev. C 09/97 International IOR Rectifier IRK.91 SERIES STANDARD DIODES NEWADD-A-pak Power Modules F e a tu re s • E lectrica lly isolated : D B C b a s e p late ■ 3 5 0 0 V RMS Isolating v o lta g e ■ S ta n d a rd J E D E C p ac kag e
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5S452
DG3D275
0D3G2
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RKC7
Abstract: No abstract text available
Text: International IOR Rectifier NTL iN A ' O • ; . PtC. tilt». Diodes A N N :V iW iA ir IV*-* Vfb @ * x Part Number VHM V i Fa v @ T c (A) (C) 'F(*V) (A) (V) Fax on Demand Number 1FSM 50 Hi 60Hz Rejc(oq (A) rc/W ) Notes Case Outline Key Power Module Center tap common cathode
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IRKC56/04
IRKC56/06
1RKC56/08
IRKC56/10
RKC56/12
C56/14
C56/16
IRKC71/04
RKC71/06
IRKC71/08
RKC7
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Untitled
Abstract: No abstract text available
Text: Bulletin 127402 rev. A 09/97 International lO R Rectifier IRKD600. SERIES STANDARD DIODES SUPER MAGN-A-pak Power Modules Features 600 A • High current cap ab ility ■ 3 0 0 0 V RMg isolating v o lta g e with n o n-toxic substrate ■ High surge cap ab ility
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IRKD600.
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1505cma
Abstract: IRK 330
Text: Bulletin 127090 International IÖ R Rectifier IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ E lectrically isolated base plate ■ 3500 V RMSis o la tin g vo lta g e rev. A 09/97 ■ Industrial standard package
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ULE78996
30-MaximumNon-RepetitiveSurgeCurrent
1505cma
IRK 330
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Untitled
Abstract: No abstract text available
Text: kitemational l HRectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all 'tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB430U
O-220AB
O-22QAB
C-586
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ior e78996
Abstract: No abstract text available
Text: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate
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IRKDL450.
E78996
I27403
ior e78996
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switching TRANSISTOR mosfet 30V 40A
Abstract: IRGB440U
Text: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e
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IRGB440U
O-220AB
O-220
switching TRANSISTOR mosfet 30V 40A
IRGB440U
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tg1g
Abstract: high power thyristor scr 3f scr thyristor irkv 300
Text: Bulletin 127102 rev. A 10/97 International IQ R Rectifier SCR / SCR and SCR / DIODE Features • High voltage ■ E lectrically isolated base plate ■ 3000 VRMS isolating voltage ■ Industrial standard package ■ S im plified m echanical designs, rapid assem bly
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E78996
IRK230/250
tg1g
high power thyristor scr
3f scr thyristor
irkv 300
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Untitled
Abstract: No abstract text available
Text: Bulletin 127096 rev. A 09/97 International IÖ R Rectifier IRK. SERIES INT-A-pak Power Modules STANDARD RECOVERY DIODES Features • High voltage ■ E lectrically isolated base plate ■ 3500 V RMSiso la tin g voltage ■ Industrial standard package ■
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ULE78996
I27096
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Untitled
Abstract: No abstract text available
Text: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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10kHz)
IRGBC30F
T0-22QAB
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 2D International I R Rectifier IRG4BC30U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optim ized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC30U
O-22QAB
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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M6SS
Abstract: No abstract text available
Text: Bulletin 127094 rev. A 09/97 International IQR Rectifier IRK.L240 S E R IE S FAST RECOVERY DIODES MAGN-A-pak Power Modules Features • Fa st re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly is o la te d b a se p la te ■ In d u s tria l s ta n d a rd p a c k a g e
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25-FrequencyCharacteristics
M6SS
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83977ef
Abstract: 8042 intel kbc max2050
Text: W83977EF/CTF WINBOND I/O W83977EF/CTF Data Sheet Revision History Version Pages Dates Version on Web Main Contents First published. 1 N.A. 06/01/98 0.40 2 4, 7, 49, 50, 53, 55, 90, 91 06/16/98 0.41 3 14, 15, 16 08/17/98 0.42 Parallel port pin description correction
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W83977EF/CTF
37i3C5
4fj8-S44rifiS
83977ef
8042 intel kbc
max2050
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bulletin 127900
Abstract: 104MT I27900 SK645FR SX ETFE IRKT 64440211AA 180420-2 IRKT AN
Text: International IÖ R Rectifier Optional Hardware MT.KB Series 1 2- GATE LEADS Ident No. Device Series Description 644&2112AA 51r 91r 111MT.KB 2 DX connectors with yellow and white leads 64432113lA A 5 2 ,9 2 .112MT.KB 1 S X + 1 DX connectors with yellow and white loads
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6442L2112AA
111MT.
6443L2113lAA
112MT.
2114AA
113MT.
104MT.
SK645FR,
bulletin 127900
104MT
I27900
SK645FR
SX ETFE
IRKT
64440211AA
180420-2
IRKT AN
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Untitled
Abstract: No abstract text available
Text: V L S I T e c h n o l o g y , in c . VL16C554 QUAD ASYNCHRONOUS COMMUNICATIONS ELEMENT FEATURES - 5-, 6-, 7- or 8-bit characters - Even-, odd- or no-parity generation and detection - 1 , 1 1 /2, or 2 stop bit generation • Four 16550 C om patible Serial Ports
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VL16C554
16-byte
16-byte
16C550
84-lead
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1RGPC50U
Abstract: IRGPC50U
Text: International S Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC50U
12-Turn-Off
O-247AC
C-692
1RGPC50U
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UMC Floppy Disk Data Separator
Abstract: um8398
Text: UMC UM8398 WÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊttÊÊÊÊÊÊÊË Single-Chip Floppy Disk M f WÊÊËÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊ Controller Wtü Features IBM PC X T /A T drive system com patible Internal w rite precompensation circu it; precompensation
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UM8398
8398L-
UMC Floppy Disk Data Separator
um8398
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