FL80S05
Abstract: No abstract text available
Text: Internationa! I G R Rectifier Part Number V RRM IV Fast Recovery Diodes lf*V @ T c A) (C) •f SM VFI* @ 7 t X 50 H i 60H z ' f (AV) r JC (A) (A) (V) (°C/W) Fax on t„ („S) Notes Number Case Outline Key Discrete IOOO 40 75 400 420 1.95 0.6 500 3 4
|
OCR Scan
|
PDF
|
FL10S02
FL40S02
FL80S05
IRD3899R
40HFLR105021
40FL10S02M)
60Apk.
IOOA41S
|
FS50VS-3
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V
|
OCR Scan
|
PDF
|
FS50VS-3
130ns
O-220S
FS50VS-3
|
diode gen 52
Abstract: 34AG
Text: PD-9.1588A International IQ R Rectifier IRL3103D1S FETKY MOSFET & SCHOTTKY RECTIFIER • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Generation ¿Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal ForSynchronous Regulator Application
|
OCR Scan
|
PDF
|
IRL3103D1S
diode gen 52
34AG
|