phototransistor smd
Abstract: No abstract text available
Text: SMD In fra re d E m ittin g D iodes . Electrical/O ptical Data Shape P art No. Material Emitted C olor Lens Y! Peak Wave Length (nm) I a lf=20mA Po=(mW/sr) lf=20mA *50mA Typ. Max. Min. Typ. “A ngle 9 I Figure 201/2 2.0x1.25x1.1mm (0805) ✓ ZTNI54W
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ZTNI54W
ZTHI54W
ZTNI76W
ZTHI76W
phototransistor smd
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Untitled
Abstract: No abstract text available
Text: Control D iodes Alpha offers PIN iodes with a wide range of electrical characteristics in a variety of package styles designed to meet the need of today’s commercial and military circuitry. Package styles include hermetic glass axial leaded types for both low and high power
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IN1183
Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Text: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*
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1N11B3,
1N3765,
1N11S3A,
1N212BA
1N1183
1N3765
1N1183A
1N2128A
IN1183
IOR 5250
IN1190
PD-2087
N1190
1N1133
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9c1 zener diode
Abstract: H 48 zener diode 1N4895A DIODE BJE 1N4890 1N4890A 1N4891 1N4895 RH4895A diode BY 127
Text: M ierosemi Corp. The O'oae experts SANTA A NA, CA i SCOTTSDALE, A Z F o r more information cali: 602 941-6300 DESCRIPTION T his series of M icrosem i 400m W U ltra -S ta b le R eference D iodes offers a C E R T IF IE D R E F E R E N C E VOLTAGE S T A B IL IT Y as m ea su re d over
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1N4890
1N4895
1N4890A
1N4895A
400mW
PPM/1000
9c1 zener diode
H 48 zener diode
DIODE BJE
1N4891
RH4895A
diode BY 127
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1N5225
Abstract: 1N5262-1 1N5226 1N5227 1N5228 1N5229 1N5230 1N5231 1N5232 1N5262
Text: 1N5225 THRU 1N5262 SILICON PLANAR ZENER IODES Silicon Planar Zener D iodes S ta n d a rd Z e n e r v o lta g e to le ra n ce is ± 2 0 % . A d d suffix “ A ” for ± 1 0 % to le ra n ce and suffix “ B ” for ± 5 % tolerance. O th e r to le ra nce s, non standard and h igher Z e n e r v o ltag e s
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1N5225
1N5262
DO-35
1N5225.
1N5260
1N5261
1N5262
1N5262-1
1N5226
1N5227
1N5228
1N5229
1N5230
1N5231
1N5232
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66R2S
Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Text: DO 4 C B 33 C ontrolled avalanche silicon rectifier iodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC
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6tcase12s
12tcase125
12tcase
66R2S
30R2S
Diodes de redressement
byw 68
26R2S
BYW 200
r2 137
C2501
C5001
REDRESSEMENT
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BZX84
Abstract: c3v9 BZY88 CODE W4 BZY88 equivalent zener BZY88 equivalent C7V6 zener diode bzy88 C18-C20 c5v1
Text: i semiconductors FERRANTI BZX84 Series C2V7 to C47 J Silicon V o lta g e R egulator D iodes DESCRIPTION Silicon voltage regulator iodes designed fo r voltage reference and stabilizer applications. The series consists o f 31 types w ith nominal zener voltages ranging from 2 -7 V to 47V w ith a ± 5 % tolerance.
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BZX84
OT-23
BZY88.
OT-23
BZX84-C2V7
BZX84-C7V5
BZX84-C20
c3v9
BZY88
CODE W4
BZY88 equivalent zener
BZY88 equivalent
C7V6
zener diode bzy88
C18-C20
c5v1
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HSCH9201
Abstract: No abstract text available
Text: What HEW LETT* miltm PACKARD GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency
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HSCH-9101
HSCH-9201
HSCH-9251
HSCH-9101
HSCH-9251
10E-5
6xlOE-13
HSCH9201
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Untitled
Abstract: No abstract text available
Text: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)
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MA2D760A
-220D
O-220D
C7031
150kHz
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Untitled
Abstract: No abstract text available
Text: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching iodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that
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76S6t
DO-35
025mA
1N4532
1N4531
1N4533
1N4S34
1N4536
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Untitled
Abstract: No abstract text available
Text: R e ctifie r D iodes 3 Phase Bridge Diode M odules Absolute Maximum Ratings Part No. lo V rm Conditions If s m Electrical Characteristics Tstg |R ejc max Conditions (max) (max) IF V r= V rm [V] [A] [ mA ] Vf Tj Tc [V] S10VT60 600 80 800 S10VTA60 600 80 800
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S10VT60
S10VTA60
S15VT60
S15VTA60
S20VT60
S20VTA60
S30VT60
S30VTA60
D30VTA1600
D30VTA160
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B0014
Abstract: No abstract text available
Text: COAICHII’ Small Signal Switching iodes SMQ D iodes S p o c ia lls t CDST7000-G Reverse Voltage: 100 Volts Forward Current: 200mA RoHS Device Features S O T -23 D esig n ed fo r m ounting on sm all s u rfa c e . High sp eed sw itching. !l1 0 Z 8 0 High m ounting c ap ability, strong surge
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CDST7000-G
200mA
7000-G)
B0014
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Untitled
Abstract: No abstract text available
Text: ^ RB451F — K/D iodes RB451F y IJ =l > I k°2 * v 7 M $ '> a "J V + - / * U 7 $ < * ~ K Silicon Epitaxial Schottky Barrier Diode • W K ifiilS I/D im e n s io n s U n it: mm 1) 5 - C - A b 2) / h M T '* 3 „ 3) 9 r^ ](o $ § j z C &-5 o 1) M in im old type
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RB451F
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MA4882
Abstract: MA4853
Text: M an A M P com pany Axial Lead Glass Packaged Schottky Mixer iodes Features Case Style 54 • • • • See appendix for complete dimensions High Reliability Screening to Jantxv Level Available Low and M edium Barrier D iodes Available Low Noise Figure T hrough 10 GHz
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3226-L
MA4882
MA4853
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Untitled
Abstract: No abstract text available
Text: • 4 4 4 7 5 A 4 □□□'17313 S I T HEW LETT-PACKARD/ ■H P A C MP NT S W fw% H E W L E T T b lE D PACKARD PIN D iodes for F ast S w itch in g and A tten u atin g Technical Data 5082-3305 5082-3306 Features 1 32 0 5 2 f2 3 fi5 3 § l • Nanosecond Sw itching
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DDDT73Ã
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ECG5296A
Abstract: ECG5063A ECG5130A ECG140A ECG5005A ECG5118A ecg5161a ECG5137 ECG145A ECG5204A
Text: PHILIPS E C G INC Note: Zener D iodes Voltage V for Tolerance 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 11.5 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 10 watt and 50 watt Zeners listed have anode connected to stud. Add suffix
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Q0075D7
ECG5000A
ECG5001A
ECG5002A
ECG5063A
ECG5003A
ECG5004A
ECG5065A
ECG5005A
ECG5066A
ECG5296A
ECG5063A
ECG5130A
ECG140A
ECG5118A
ecg5161a
ECG5137
ECG145A
ECG5204A
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TBA 900
Abstract: CY120 CY103 BKC Semiconductors Scans-0014814
Text: S D chottky iodes III» Small Signal Schottky iodes Type Peak Inverse Voltage MIN. (PIV) (VF) @ 1mA (VF) 15mA Volts Volts Volts ma @vR Volts 0.41 0.41 0.41 0.40 0.39 1.0 1.0 1.0 0.95 0.90 0.2 0.2 0.2 0.2 0.2 50 50 50 40 30 Maximum Forward Voltage Drop
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CY5711
CY6263
CY101A
CY101B
CY101C
100mA
CY5818
CY5819
CY120
100-20-TBÃ
TBA 900
CY103
BKC Semiconductors
Scans-0014814
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SDL-3060-001
Abstract: SDL LASER Laser SDL SDL-6032 SDL-3030 SDL-3060 SDL6032 SDL3030 Laser SDL 20 SDL-3034-101
Text: SANYO SEMI CON DUCTOR CORP 32E í 7 ^ 7 0 7 ^ 0000471 5 Laser Diode —K L a s e r D iodes Absolut« ì M a xim u m Rí tin g s m m « T yp e No. ïvw m Ä 'ÿtlii't} Features L ig h t O u tp u t K fftS ffliS O p e ra tin g Temperature Po Topr Po Ith lo p
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SDL-3030001
SDL-3034001
SDL-3034-101
SDL-3060001
SDL-3140001
SDL-3140101
SDL-3140-201
SDL-3144101
10r-60
SDL-4034-151
SDL-3060-001
SDL LASER
Laser SDL
SDL-6032
SDL-3030
SDL-3060
SDL6032
SDL3030
Laser SDL 20
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RLS-71
Abstract: RLS-72 "TE-11" ROHM RLS-73 LL-34 diodes color yellow
Text: ROHM CO LT» 4DE D ? & E & m $ 'f ^ — K/D iodes 0001,4^3 L S O R H i l RLS-71 /RLS-72/RLS-73 — R D - 7 1 / ^ L S - 7 2 / ^ L S — - 7 " 7 T £ > 3 -ö 9 3 Silicon Epitaxial Planar H igh-Speed Switching Leadless iodes W fi\ t " 5£ 0 /D im e n s io n s U nit : mm
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RLS-71
/RLS-72/RLS-73
RLS-71/HLS-72/Ã
1LS-73
LL-34
RLS-72
RLS-73
RLS-71
RLS-72
"TE-11" ROHM
LL-34 diodes color yellow
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Untitled
Abstract: No abstract text available
Text: Afa M an AM P com pany Schottky Barrier Beam Lead and Packaged Bridge Quads MA4E400 Series V3.00 Features Case Styles • • • • Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation Low, Medium and High Barrier D iodes Available
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MA4E400
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nfr 25m
Abstract: PC100F2 diode 931 p 7 BB351 ITT DIODE 210
Text: FAST RECOVERY DIODE MODULE 100A/200V/trr:90nsec PC100F2 FEATURES O Iso la te d B ase o D ual D iodes - C athode Com m on :PC100F2 20 0791 & O S uper F a st R ecovery o H igh S urge C apability -4 4 (1 7 3 . i . ,0';95 |. 8 2(323» -« 1 41.5(1.63)
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00A/200V/trr
90nsec
PC100F2
PC100F2
PC100F
bbl5123
nfr 25m
diode 931 p 7
BB351
ITT DIODE 210
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TRF 530
Abstract: 317 lz K122 ST Low Forward Voltage Schottky Diode 2G21 FCQ10A03L TEG 105
Text: SCHOTTKY BARRIER DIODE 10A/30V fcqioao3l 3. K . 122 FEATURES MAX o S im ila r to T 0 -2 2 0 A B C ase 'MAXi 10. 3 .4051 3. 4( . 1M )„ . MAX "I/ Ä H « A ~W O F u lly M olded Iso latio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C athode C om m on
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FCQ10A03L
O-220AB
035IMA
FCQ10A.
bbl5123
bbl5123
0002Q22
TRF 530
317 lz
K122
ST Low Forward Voltage Schottky Diode
2G21
FCQ10A03L
TEG 105
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TC65T
Abstract: TLM 431 KCQ60A04 diode schottky 4T
Text: SCHOTTKY BARRIER DIODE 60A/40V KCQ60A04 FEA TU RES 5.31.209 4.7U35) o S im ila r to T O -247A C T O -3P ) Case o D u a l D iodes-C athode Com m on o Low F o rw a rd V o ltag e D rop o L o w P o w er L oss, H igh E fficiency O H igh S u rg e C apability 3 .2 (126)- t
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KCQ60A04
O-247AC
15X775!
TC65T
TLM 431
KCQ60A04
diode schottky 4T
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FCH20A06
Abstract: mnaf
Text: SCHOTTKY BARRIER DIODE FCH20A06 20A / 60V FEATU RES o T 0 -2 2 0 A B F ully M olded ODual D iodes - Cathode Com m on O Low F orw ard V o lta g e Drop O H igh Su rg e C apability o T j = 15 fC operation Approx. Net Weight : 1.75 Grams MAXIMUM RATINGS \ T y p e
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2OA/60V
FCH20A06
T0-220AB
10-3C
JJU34
FCH20A-
bblS123
000205b
FCH20A06
mnaf
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