LB1616
Abstract: BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP 2-44
Text: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current
|
Original
|
PDF
|
100ns
BS616UV4016
x8/x16
R0201-BS616UV4016
TSOP2-44
LB1616
BS616UV4016
BS616UV4016AC
BS616UV4016AI
BS616UV4016DC
BS616UV4016DI
BS616UV4016EC
BS616UV4016EI
TSOP 2-44
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous
|
Original
|
PDF
|
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
|
CS26LV64173
Abstract: No abstract text available
Text: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64173 Revision History Rev. No. 1.0 History Issue Date 1. New Release. Mar.27, 2013 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down DPD 3-2. Partial Array Refresh (PAR)
|
Original
|
PDF
|
CS26LV64173
CS26LV64173
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data
|
Original
|
PDF
|
16k/8k/4k
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
16k/8k/4k
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous
|
Original
|
PDF
|
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous
|
Original
|
PDF
|
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
100-ball
|
Untitled
Abstract: No abstract text available
Text: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI BS616LV4016 n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V C-grade : 25mA @55ns operating current I-grade : 27mA(@55ns) operating current
|
Original
|
PDF
|
BS616LV4016
V/85OC
x8/x16
R0201-BS616LV4016
TSOP2-44
|
bz100
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data
|
Original
|
PDF
|
16k/8k/4k
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
16k/8k/4k
bz100
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16/CYDMX256B16 CYDMX128A16/CYDMX128B16 CYDMX064A16/CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous
|
Original
|
PDF
|
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
100-ball
|
Untitled
Abstract: No abstract text available
Text: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current
|
Original
|
PDF
|
100ns
BS616UV4016
x8/x16
R0201-BS616UV4016
TSOP2-44
|
Untitled
Abstract: No abstract text available
Text: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data
|
Original
|
PDF
|
16k/8k/4k
CYDMX256A16,
CYDMX256B16
CYDMX128A16,
CYDMX128B16
CYDMX064A16,
CYDMX064B16
16k/8k/4k
|