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    INTERNATIONAL SEMICONDUCTOR 1981 Search Results

    INTERNATIONAL SEMICONDUCTOR 1981 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INTERNATIONAL SEMICONDUCTOR 1981 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSP43220

    Abstract: ASSP29
    Text: Harris Semiconductor No. AN9403 Harris Digital Signal Processing November 1994 PREDICTING DATA THROUGHPUT IN THE HARRIS HSP43220 Authors: John Stauber, Picker International Perry Frogge, Harris Semiconductor Introduction Many signal processing applications require a filter which


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    PDF AN9403 HSP43220 HSP43220 ASSP29

    IEC 68-2-63

    Abstract: transistors Si 6822 MIL-STD-781 transistors 6822 si MIL-STD-785 MIL-STD-721 The Japanese Transistor Manual 1981 IEC 68-2-28 AND 7411 NATIONAL SEMICONDUCTOR MARKING BM
    Text: STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES VIII. STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES 1. QUALITY SYSTEM STANDARDS 1.1 INTRODUCTION TO THE ISO 9000 SERIES


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    932 optocoupler

    Abstract: VO3150-X001
    Text: VO3150 Vishay Semiconductors Optocoupler, IGBT and MOSFET Driver FEATURES • 0.5 A minimum peak output current NC 1 8 VCC A 2 7 VO C 3 6 VO NC 4 5 VEE 19813 SHIELD 19814 • 15 kV/µs minimum common mode rejection CMR at VCM = 1500 V • 1.0 V maximum low level output voltage (VOL)


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    PDF VO3150 thdip87 VO3150 08-Apr-05 932 optocoupler VO3150-X001

    ed28 smd diode

    Abstract: hv 102 mos fet transistor diagram of high frequency pvc welding machine schematic diagram of electric cookers Ultrasonic Cleaner schematic engel injection machines TEG 2423 40khz ULTRASOUND CLEANER ultrasonic generator 40khz for cleaning schematic of trigger 555 n-mosfet
    Text: FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES III. FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES 1. INTRODUCTION 2. FAILURE MECHANISMS AND SCREENING 3. FAILURE MECHANISMS ATTRIBUTED TO WAFER FABRICATION PROCESS 3.1 HOT CARRIER 3.3.1.1 INTRODUCTION 3.3.1.2 HOT CARRIER MECHANISM


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    PDF ED-4701-1 C-113: ed28 smd diode hv 102 mos fet transistor diagram of high frequency pvc welding machine schematic diagram of electric cookers Ultrasonic Cleaner schematic engel injection machines TEG 2423 40khz ULTRASOUND CLEANER ultrasonic generator 40khz for cleaning schematic of trigger 555 n-mosfet

    VO3150-X001

    Abstract: optocoupler igbt 932 optocoupler VO3150 IEC68 VO3150-X017T NATIONAL IGBT
    Text: VO3150 Vishay Semiconductors Optocoupler, IGBT and MOSFET Driver FEATURES • 0.5 A minimum peak output current NC 1 8 VCC A 2 7 VO C 3 6 VO NC 4 5 VEE 19813 SHIELD 19814 • 15 kV/µs minimum common mode rejection CMR at VCM = 1500 V • 1.0 V maximum low level output voltage (VOL)


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    PDF VO3150 thdip87 VO3150 18-Jul-08 VO3150-X001 optocoupler igbt 932 optocoupler IEC68 VO3150-X017T NATIONAL IGBT

    Untitled

    Abstract: No abstract text available
    Text: VO3150 Vishay Semiconductors Optocoupler, IGBT and MOSFET Driver FEATURES • 0.5 A minimum peak output current NC 1 8 VCC A 2 7 VO C 3 6 VO NC 4 5 VEE 19813 SHIELD 19814 • 15 kV/µs minimum common mode rejection CMR at VCM = 1500 V • 1.0 V maximum low level output voltage (VOL)


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    PDF VO3150 thdip87 VO3150 11-Mar-11

    kc 2462

    Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102
    Text: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less


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    Untitled

    Abstract: No abstract text available
    Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States


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    htcc 102 capacitor

    Abstract: Hughes Microelectronics JESD-A101 LTCC
    Text: LTCC-Bringing Functional Integration to RF & Microwave Products Raymond Brown National Semiconductor Corporation Wireless Communications Santa Clara, California The development of LTCC for microelectronics Projected increases in interconnect density and requirements for higher clock rates for digital and


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    SRF 1063

    Abstract: Passive filters used in wireless lans W. HUGHES TEST POINTS JESD-A101 capacitor huang Hughes Microelectronics W. HUGHES microstripline htcc 102 capacitor hitachi SAW Filter
    Text: LTCC-Bringing Functional Integration to RF & Microwave Products Raymond Brown National Semiconductor Corporation Wireless Communications Santa Clara, California The development of LTCC for microelectronics Projected increases in interconnect density and requirements for higher clock rates for digital and


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    dot matrix printer circuit diagram datasheet

    Abstract: IEEE 1284 CONNECTOR DB25 FOOTPRINT PCB IEEE 1284 Peripheral Interface Controller "IEEE 1284" peripheral component interconnect 386SL 74LVX161284 74VHC161284 IEEE1284
    Text: IEEE1284 transceivers aid in successful implementation of the IEEE1284 standard Claudia Innes Product Marketing Manager Fairchild Semiconductor The Evolution of peripheral communications Peripheral communications have gone through several distinct technology and design phases to progress to today’s level.


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    PDF IEEE1284 dot matrix printer circuit diagram datasheet IEEE 1284 CONNECTOR DB25 FOOTPRINT PCB IEEE 1284 Peripheral Interface Controller "IEEE 1284" peripheral component interconnect 386SL 74LVX161284 74VHC161284

    ecg semiconductors master replacement guide

    Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
    Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high


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    PowerPC 601 interface circuit

    Abstract: 620t hotwire anemometer powerpc 620 advanced information
    Text: Freescale Semiconductor, Inc. Thermal Management of a C4/Ceramic-Ball-Grid Array: The Motorola PowerPC 603 and PowerPC 604™ RISC Microprocessors Gary B. Kromann Freescale Semiconductor, Inc. Advanced Packaging Technology Semiconductor Products Sector


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    PDF 603TM 604TM 21x21 133MHz PowerPC 601 interface circuit 620t hotwire anemometer powerpc 620 advanced information

    Magneti Marelli

    Abstract: stu 4070 Bosch radar Marelli solar farm design how to program Siemens cash power meter 3.5kw pfc Solar home lighting system project 35kW POWER GRID CONTROL THROUGH PC project objectives
    Text: copertina2 28-06-2002 12:01 Pagina 3 Corporate Environmental Report and Social Review 2001 eco1-5okok m 28-06-2002 11:46 Pagina 1 CONTENTS Page Message from the President STMicroelectronics at a Glance Our Commitment to Sustainable Development Social Review


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    PDF I-20041 Magneti Marelli stu 4070 Bosch radar Marelli solar farm design how to program Siemens cash power meter 3.5kw pfc Solar home lighting system project 35kW POWER GRID CONTROL THROUGH PC project objectives

    frequency division multiplexing circuit diagram

    Abstract: 450MHz CDMA Handset Circuit Diagram automatic change over switch circuit diagram APC back UPS RS 800 power and battery cabinet ericsson MTAS ericsson 800MHz CDMA Handset complete Circuit Diagram UPS APC CIRCUIT frequency division multiplexing circuits ericsson bbs
    Text: Harris Semiconductor No. AN9640.1 Harris Communications December 1996 Glossary of Communication Terms Authors: Mark Amarandos and Don LaFontaine Introduction BSS † BTA C-NETz C/I CAD † CAGR CAI CAM † CAP CAP HDSL CBEMA † The following glossary of communication terms is provided


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    PDF AN9640 1-800-4-HARRIS frequency division multiplexing circuit diagram 450MHz CDMA Handset Circuit Diagram automatic change over switch circuit diagram APC back UPS RS 800 power and battery cabinet ericsson MTAS ericsson 800MHz CDMA Handset complete Circuit Diagram UPS APC CIRCUIT frequency division multiplexing circuits ericsson bbs

    Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes

    Abstract: No abstract text available
    Text: PLASMA ETCH INDUCED SURFACE DAMAGE AND ITS IMPACTS ON GaAs SCHOTTKY DIODES Hong Shen*, Peter Dai, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Email: hong.shen@skyworksinc.com Telephone: 805 480-4481 Keywords: GaAs, Schottky diode, dry etch, barrier height, plasma, damage


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    PDF device1000 Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes

    Untitled

    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


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    TP3110

    Abstract: TP3056 TP3120 ME32 AN-316 C1995 TP3051 slot map
    Text: National Semiconductor Application Note 316 James W Smith August 1982 Abstract This note describes a set of integrated circuit components that together form a major portion of a complete subscriber line card subsystem At the center of this unique configuration is the digital line interface controller


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    Theory of Modern Electronic Semiconductor fuses

    Abstract: pwm inverter circuit DC Rated Square- Body Fuses ferraz pspice high frequency igbt igbt control circuit for induction heating
    Text: Effect of Harmonic Currents on Semiconductor Fuse Ratings R Wilkins J. F. de Palma C. Mulertt Consultant Overdee, Rocky Lane Heswall, Wirral, CH60 0BZ, UK Ferraz Shawmut 374 Merrimac Street Newburyport, MA 01950, USA Ferraz Shawmut 1, Rue Novel FR-69100 Villeurbane, France


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    PDF FR-69100 Theory of Modern Electronic Semiconductor fuses pwm inverter circuit DC Rated Square- Body Fuses ferraz pspice high frequency igbt igbt control circuit for induction heating

    VOLTERRA

    Abstract: free all transistor equivalent book Precision Monolithics DISCONTINUED Teledyne Semiconductor toyota engineering standard toshiba OPTICAL PICK-UP dvd laser DVD laser pickup assembly
    Text: X UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K Mark One x Annual Report Pursuant to Section 13 or 15(d) of the Securities Exchange Act of 1934 for the Fiscal Year Ended October 3, 1999. OR Transition Report Pursuant to Section 13 or 15(d) of the Securities Exchange Act of


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    Emosyn

    Abstract: yamaha SERVICE MANUAL certified management accountant pd good ark foundry LED-GE 24 yamaha ic yamaha ts-s X3100 furniture computer industrial Stanford Telecommunications
    Text: X I C O R I N C A N N U A L R E P O R T 1 9 9 9 Business Model Customer Benefits New Products New Markets Relationships Focus on Strategy CO R P O R AT E P R O F I L E Xicor’s product line includes digitally controlled “analog” potentiometers XDCPs , analog products which utilize


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    16V8

    Abstract: 20V8
    Text: PRESS RELEASE CYPRESS OFFERS SUPPORT FOR PROGRAMMABLE LOGIC DESIGN WITH MENTOR GRAPHICS SOFTWARE “Bolt-in Kit” Gives Seamless Integration of Mentor Graphics Tools with Warp Software SAN JOSE, Calif., March 10, 1997 - Cypress Semiconductor Corp. NYSE:CY today


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    PDF FLASH370i 16V8 20V8

    TSAL6400

    Abstract: TSHF5400 TSOP5700
    Text: TSOP5700 Vishay Semiconductors IR Receiver for High Data Rate PCM at 455 kHz Description The TSOP5700 is a miniaturized SMD IR receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.


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    PDF TSOP5700 TSOP5700 08-Apr-05 TSAL6400 TSHF5400

    intel 2716 eprom

    Abstract: intel 2816 intel 2816 eeprom EEPROM 2816 B 2716 D EEPROM intel ev 2816 INTEL D 2816 intel EPROM 2816 eprom intel 2816 eprom
    Text: i n t e APPLICATION NOTE T AP-100 December 1982 C A f *T & 3r T «is0 . . i ö .w 4 T r ^ j f P | Based on presentation at 1981 International Reliability Physics Symposium, Orlando, Florida, April 7, 1981. Intel Corporation, 1962. 5-1 A P-100 INTRODUCTION


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    PDF AP-100 P-100 intel 2716 eprom intel 2816 intel 2816 eeprom EEPROM 2816 B 2716 D EEPROM intel ev 2816 INTEL D 2816 intel EPROM 2816 eprom intel 2816 eprom