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    INTERNATIONAL RECTIFIER MOSFET 24V DC SWITCH Search Results

    INTERNATIONAL RECTIFIER MOSFET 24V DC SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    INTERNATIONAL RECTIFIER MOSFET 24V DC SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9389

    Abstract: No abstract text available
    Text: IRF9389PbF N-CH 30 V DS R DS on max 27 Qg (typical) 6.8 HEXFET Power MOSFET P-CH -30 64 8.1 V S1 m nC N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET ID (@TA = 25°C) 6.8 -4.6 A SO-8 Top View Applications l High and Low Side Switches for Inverter


    Original     		PDF IRF9389PbF EIA-481 EIA-541. D-020D IRF9389

    pcb step down transformer

    Abstract: LP3925H
    Text: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAC27951SR IRS27951 Evaluation Board User Guide Rev. 4.1 6/1/2011 International Rectifier Page 1 of 23 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


    Original     		PDF IRAC27951SR IRS27951 IRS27951/2 10x60 10x250 LP3925H pcb step down transformer LP3925H

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8330PbF com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8330PbF AN-994 com/technical-info/appnotes/an-994

    LP3925H

    Abstract: international rectifier SMD
    Text: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAC27951SR IRS27951 Evaluation Board User Guide Rev. 4.1 6/1/2011 International Rectifier Page 1 of 23 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


    Original     		PDF IRAC27951SR IRS27951 1234526317268954A31B145C IRS27951/2 10x60 10x250 LP3925H LP3925H international rectifier SMD

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 12.4 m 17.9 Qg (typical) 5.4 nC ID (@TC = 25°C) 18 A Top View D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3 x 3.3 mm Applications  System/load switch,


    Original     		PDF IRFHM8337TRPbF IRFHM8337PbF 297mH, AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 12.4 m 17.9 Qg (typical) 5.4 nC ID (@TC = 25°C) 18 A PQFN 3.3 x 3.3 mm Applications  System/load switch,  Charge or discharge switch for battery protection


    Original     		PDF IRFHM8337TRPbF IRFHM8337PbF AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFH9310PbF HEXFET Power MOSFET VDS -30 RDS on max V S S 6 mm mΩ nC RG (typical) 110 2.8 ID -21 A (@VGS = 10V) Qg (typical) (@TA = 25°C) D S D 5 mm 4.6 G D Ω D PQFN 5mm x 6mm Applications • Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFH9310PbF IRFH9310TRPBF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8329PbF TN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8329PbF AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8326PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8326PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM9391TRPbF HEXFET Power MOSFET VDSS -30 RDS on max (@ VGS = -10V) (@ VGS = -4.5V) V 14.6 m 22.5 Qg (typical) 32 ID (@TA = 25°C) nC -11 D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3 x 3.3 mm A Applications  System/load switch, 


    Original     		PDF IRFHM9391TRPbF IRFHM9391PbF 872mH, AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM9331PbF HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -30 V 14.6 mΩ 32 nC -11 5D G4 6 D S 3 7D S 2 8D S 1 S S S D D G D D A 3mm x 3mm PQFN Applications l System/load switch Features and Benefits Features Low Thermal Resistance to PCB (<6.0°C/W)


    Original     		PDF IRFHM9331PbF IRFHM9331TRPbF IRFHM9331TR2PbF

    Untitled

    Abstract: No abstract text available
    Text: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V


    Original     		PDF IRF9383MPbF 315nC

    Untitled

    Abstract: No abstract text available
    Text: IRFHM9391TRPbF HEXFET Power MOSFET VDSS -30 RDS on max (@ VGS = -10V) (@ VGS = -4.5V) V 14.6 m 22.5 Qg (typical) 32 ID (@TA = 25°C) nC -11 D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3 x 3.3 mm A Applications  System/load switch, 


    Original     		PDF IRFHM9391TRPbF IRFHM9391PbF AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9301PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V RDS on max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) TOP VIEW D 1 37 mΩ 13 nC D 2 A G 3 -8.5 d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9301PbF IRFHS9301TRPBF IRFHS9301TR2PB

    IRFHS9301

    Abstract: No abstract text available
    Text: IRFHS9301PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V RDS on max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) TOP VIEW D 1 37 mΩ 13 nC D 2 A G 3 -8.5 d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9301PbF IRFHS9301

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9351PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9351PbF IRFHS9351T

    irlhs6342pbf#2

    Abstract: No abstract text available
    Text: IRLHS6342PbF HEXFET Power MOSFET VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application


    Original     		PDF IRLHS6342PbF irlhs6342pbf#2

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRF8301MTRPbF DirectFET™ Power MOSFET ‚ Ultra-low RDS on l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses


    Original     		PDF IRF8301MTRPbF IRF8301MPbF

    Untitled

    Abstract: No abstract text available
    Text: IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits


    Original     		PDF IRF9395MPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1562A International IQR Rectifier IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Vqss = 30 V ^DS on = Description


    OCR Scan     		PDF IRF9410 IRF7403 IRF7413 QQ2T32b