IRGPS66160DPBF
Abstract: No abstract text available
Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding
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IRGPS66160DPbF
IRGPS66160DPbFÂ
JESD47F)
IRGPS66160DPBF
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Untitled
Abstract: No abstract text available
Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS
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IRG7PSH54K10DPbF
IRG7PSH54K10DPbFÂ
Super-247
JESD47F)
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n06hd
Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and
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TND310
TND310/D
n06hd
N Channel MOS FET 3 ghz
International rectifier thyristor manual
SOT953
Thyristor to220
N Channel MOS FET up to 5 ghz
MOS FET SOT-223 ON
st naming
DC variable power center tap
MOTOROLA TRANSISTOR TO-220
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schematic e.m.p
Abstract: 100C EMP15P12D diode EB 24 1200V15A
Text: Bulletin I27181 rev 1.4 06/03 EMP15P12D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 15A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.7Vtyp @ 15A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology
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I27181
EMP15P12D
32Vtyp
50ppm/
EMP15P12D
schematic e.m.p
100C
diode EB 24
1200V15A
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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ECONOPACK
Abstract: 100C EMP15P12D schematic e.m.p rev 1.5 driver motherboard
Text: Bulletin I27181 rev 1.5 08/05 EMP15P12D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 15A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.7Vtyp @ 15A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology
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I27181
EMP15P12D
32Vtyp
50ppm/
EMP15P12D
ECONOPACK
100C
schematic e.m.p
rev 1.5 driver motherboard
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high frequency inverter for induction heating
Abstract: solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding
Text: IXYSPOWER Efficiency Through Technology N E W P R O D U C T B R I E F 1200V GenX3 IGBTs next generation 1200V igbts for power conversion applications march 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor IGBT portfolio to 1200
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E153432)
com/IXAN0022
PB120IGBTA3B3C3
high frequency inverter for induction heating
solar inverter circuit
ixgh30n120
transistor Electronic ballast "INDUCTION LAMP"
induction heating circuits
SMPS INVERTER FULL BRIDGE FOR WELDING
Converter for Induction Heating
igbt 1200V 20A
igbt for HIGH POWER induction heating
resonant converter for welding
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Inverter Welder
Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM
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PB60IGBTA3B3C3
Inverter Welder
inverter welder circuit
resonant inverter for welding
smps welder inverter
resonant converter for welding
IXGR48N60C3D1
600V igbt dc to dc boost converter
IXGH48N60C3D1
SMPS INVERTER FULL BRIDGE FOR WELDING
full bridge inverter
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Untitled
Abstract: No abstract text available
Text: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UPbF
40kHz
200kHz
Super-247
O-247
pow74AA)
IRFPS37N50A
IRFPS37N50A
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Untitled
Abstract: No abstract text available
Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382B
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
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Rectifier, 70A, 1000V
Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Text: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71U
40kHz
200kHz
Super-247
O-247
Super-247TM
O-274AA
IRFPS37N50A
IRFPS37N50A
O-247TM
Rectifier, 70A, 1000V
IRG4PSH71U
70A 1200V IGBTS
1200v fet
transistor 58w
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AN-994
Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB10B60KDPbF
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-220.
AN-994.
O-220
AN-994
C-150
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
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IRG4PSC71
O-247
O-264,
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Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
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IRG4PSH71
O-247
O-264,
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Untitled
Abstract: No abstract text available
Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC50UD
O-247AC
554S5
DDSfl51fl
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1084 GE
Abstract: IRG4PSC71
Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTO R WITH ULTRAFAST SO FT RECOVERY DIODE Features Vces = 6 0 0 V • H ole-less clip /p re ssu re m ou nt pa ckag e com p atib le
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IRG4PSC71
1084 GE
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier PD - 91687 IRG4PSH71K P R E L IM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H ole-less clip/pre ssure m ou nt pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforced pins
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IRG4PSH71K
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high
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IRG4PH20K
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Untitled
Abstract: No abstract text available
Text: International Rectifier IGR PD- 91575A IRG4PH50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 1200V • High short circuit rating o ptim ized for m otor control, tsc =10 as, V Cc = 7 2 0 V , T j = 1 2 5 ° C ,
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1575A
IRG4PH50KD
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Untitled
Abstract: No abstract text available
Text: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve
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PC50W
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UM 42A
Abstract: No abstract text available
Text: International IO R Rectifier PD - 91687 IRG4PSH71K P R E LIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H ole-less clip /pressu re m ou nt pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforced pins
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IRG4PSH71K
UM 42A
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Untitled
Abstract: No abstract text available
Text: International I«R Rectifier PD -91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H o le-less clip/pre ssure m ount pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforce d pins
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-91683A
IRG4PSC71K
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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1750A
30KHz
T-39-15
IXGH10N60U1
IXGH10N60AU1
IXGH20N60U1
IXGH17N100AU1
SOT227B package
IXSH20N60U1
*GH20N60AU1
1XYS
UltraFast 5-40 kHz
E1S4
TI231
IGBT 20A 600V ABB
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