sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: NDB171 Transient Voltage Suppressor Diode Bi-directional ESD Protection TVS Diode General Description The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge ESD . The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International
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NDB171
NDB171
OD-923
07-APR-11
KSD-D6E010-001
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smd zener diode color code
Abstract: zener DIODE smd color marking Zener diode smd marking code ja SOD-923 zener NDB171 COLOR CODE ON SMD DIODE
Text: NDB171 Transient Voltage Suppressor Diode Bi-directional ESD Protection TVS Diode General Description The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge ESD . The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International
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NDB171
NDB171
OD-923
07-APR-11
KSD-D6E010-001
smd zener diode color code
zener DIODE smd color marking
Zener diode smd marking code ja
SOD-923 zener
COLOR CODE ON SMD DIODE
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Untitled
Abstract: No abstract text available
Text: T/lzZ7 INTERNATIONAL SEniCOND 4 TE TD0D37B D00D0S3 1^3 • I S E M ]> CRD International Semiconductor, Inc. E C O N O M Y LIN E DO-35 & M E L F CURRENT REGULATOR DIODES A C R D is a diode which supplies constant current to an electronic circuit, even when power supply voltage fluctuations or load impedance fluctuations occur.
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TD0D37B
D00D0S3
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043b
Abstract: MTSS10010
Text: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÔE D ST^bSS 000043ti b a i - i ' s MTSS10010 INFRARED LED PHOTO IC MTSS10010 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in corporates a photodiode, a linear amplifier and a Schmitt
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MTSS10010
MTSS10010
57T1faSS
043b
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10KV DIODE
Abstract: No abstract text available
Text: Surging Ideas TVS Diode Application Note AN96-07 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com TRANSIENT IMMUNITY STANDARDS: IEC 1000-4-x On January 1, 1996, exports into Europe began facing some tough transient immunity standards. The International Electrotechnical Commission
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AN96-07
1000-4-x
801-X
10lans
10KV DIODE
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Untitled
Abstract: No abstract text available
Text: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0432 1 T L M l- 1 3 M T SS 10000 INFRARED LED+ PHOTO IC M TSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in corporates a photodiode, a linear amplifier and a Schmitt
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Q0432
TSS10000
00006CH
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MTSS10000
Abstract: SWITCH T-MU-73
Text: MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0H3E 1 SLOTTED SWITCH T L M l-1 3 M T S S 10000 INFRARED LED+ PHOTO IC MTSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in corporates a photodiode, a linear amplifier and a Schmitt
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Q0432
T-MU-73
MTSS10000
MTSS10000
SWITCH T-MU-73
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4842* diode
Abstract: INTERNATIONAL DIODE CORP Q2-100T Q12-200A 300b International Diode ql100 Q1-200B Q2-100C Q1-100C
Text: 4842608 INTERNATIONAL DIODE CORP INTERNATI ONAL DIODE CORP 90D 00039 TO TI m0 3 ‘0 ! D Dlf| 4fl42b0ñ □ □ □ □ 0 3 cl b | L O W C O S T S W I T C H I N G DI O D E S E L E C T R I C A L S P E C I F I C A T I O N S A T 2 5 °C TY P E NO. ma. ma. ma.
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42b0fi
Ql-100
Q1-100T
Q1-100A
Q1-100B
Q1-100C
Q1-100D
Q1-100E
Ql-200
Q1-200A
4842* diode
INTERNATIONAL DIODE CORP
Q2-100T
Q12-200A
300b
International Diode
ql100
Q1-200B
Q2-100C
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M5 DIODE 22-35
Abstract: 150-04DA fred module
Text: Fast Recovery Epitaxial Diode FRED Module MEK 150-04 DA VRRM = 400 V IFAV = 150 A trr = 300 ns Preliminary data 3 VRSM VRRM V V 400 400 Symbol 1 Type 2 3 TO-240 AA 2 1 MEK 150-04DA Conditions Maximum Ratings Features International standard package with DCB ceramic base plate
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150-04DA
O-240
D-68623
M5 DIODE 22-35
fred module
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: L e e - M in t o o n g INTERNATIONAL DIODE CORP. 2 2 9 C LEVELAN D A V E . H A R R IS O N N J 0 7 0 2 9 2 0 1 4 8 2 -6 5 1 8 E L E C T R IC A L S P E C IF IC A T IO N S FOR LOW COST SW ITCH IN G DIODES C O M P R E H E N S IV E L IS T OF J E D E C R E G IS TE R E D T Y P E S M AN U FAC TU R ED BY
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IGBT 200A 1200V application induction heating
Abstract: CM300DY-24NF pwm generation circuit for induction heating igbt high frequency 1200V POWEREX igbtmod CM300DC-24NFM CM300DU-24NFH IGBT power loss igbt for HIGH POWER induction heating induction heating igbt
Text: Optimizing 1200V IGBT Modules for High Frequency Applications Eric R. Motto*, John F. Donlon* Yoshikatsu Nagashima* * Powerex Incorporated, Youngwood, Pennsylvania, USA * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan Abstract - This paper presents a new 1200V 5th generation
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15KHz
30KHz.
9DB-100,
IGBT 200A 1200V application induction heating
CM300DY-24NF
pwm generation circuit for induction heating
igbt high frequency 1200V
POWEREX igbtmod
CM300DC-24NFM
CM300DU-24NFH
IGBT power loss
igbt for HIGH POWER induction heating
induction heating igbt
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TSMC 90nm sram
Abstract: tsmc 130nm metal process nmos transistor tsmc 130nm contact via design rule metal process applications of vlsi in antennas tsmc design rule front of fabrication process matched transistors 52NM
Text: Translating Yield Learning Into Manufacturable Designs Vijay Chowdhury, Irfan Rahim, Ada Yu and Girish Venkitachalam Altera Corp. San Jose, CA 95134 Introduction: Improving semiconductor yield is a multi-dimensional process that must include design, fabrication and test aspects. An
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MOSFET 1200v 3a
Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with
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IEGT 4500V
Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
Text: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan
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IEGT 4500V
Abstract: n mosfet depletion 600V IEGT IGBT 4500V mitsubishi igbt cm
Text: The CSTBT, a New 1200V Power Chip with Low VCE sat and Robust Short Circuit Withstanding Eric Motto*, John F. Donlon*, Yoshifumi Tomomatsu*, Shigeru Kusunoki* Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, Hideo Iwamoto* * Fukuryo Semicon Engineering Corporation, Fukuoka, Japan
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7BR25SA120
Abstract: design drive circuit of IGBT IR2112 application note IGBT cross reference IRGP30B120KD-E AN-983a IR igbt gate driver ic IR2112 equivalent IR2112 an-990
Text: “Positive Only” Gate Drive IGBTs Created by Cres Minimization By Richard Francis, Peter Wood and Arnold Alderman, International Rectifier Corporation As presented at PCIM 2001 +Vbus Previously, the general practice is to provide Insulated Gate Bipolar Transistors IGBTs with
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AN983A,
AN990,
7BR25SA120
design drive circuit of IGBT
IR2112 application note
IGBT cross reference
IRGP30B120KD-E
AN-983a
IR igbt gate driver ic
IR2112 equivalent
IR2112
an-990
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Untitled
Abstract: No abstract text available
Text: SLOTTED SWITCH 1ÖE » MARKTECH IN TE RNATIONAL ST'ììbSS 000043t, h MTSS10010 ai-i^ INFRARED LED+ PHOTO IC MTSS10010 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in corporates a photodiode, a linear amplifier and a Schmitt
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000043t,
MTSS10010
MTSS10010
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Untitled
Abstract: No abstract text available
Text: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ultra-low Forward Diode BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G Compatible with DirectFET Package MX Footprint and Outline
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AP1004CMX
AP1004CMX
100us
100ms
Fig10.
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WA1500
Abstract: bolometer bolometer application lockin amplifier Microwave Photonics Systems GunnDiode Gunn Diode gunn diode datasheet RADIATION SPECTROMETER THEORY spiral antenna
Text: An Optically Integrated Coherent Frequency-Domain THz Spectrometer with Signal-to-Noise Ratio up to 80 dB Joseph R. Demers, Ronald T. Logan Jr. Elliott R. Brown Emcore Corporation Alhambra, California U.S.A. joe_demers@emcore.com, rlogan@emcore.com University of California, Santa Barbara
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Untitled
Abstract: No abstract text available
Text: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 3.8m ID G Compatible with DirectFET Package SQ Footprint and Outline
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AP1005BSQ
AP1005BSQ
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm ▼ Compatible with DirectFET Package MX Footprint and Outline BVDSS 30V
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AP1002BMX
AP1002BMX
100us
100ms
Fig10.
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high temperature reverse bias
Abstract: 95pf120 reliability testing report DIODE B-10 50PF120 50PFR120 95PFR120
Text: RELIABILITY REPORT 0209 DO5 PACKAGE DIODES GENERATION II QUALIFICATION REPORT International Rectifier Corporation Italy RELIABILITY LABORATORY INTERNATIONAL RECTIFIER CONTENTS Section 1 Introduction and Purpose: 2 Issue: 3 Process Description: 4 Executive Summary:
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95PF120
95PFR120
high temperature reverse bias
95pf120
reliability testing report
DIODE B-10
50PF120
50PFR120
95PFR120
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