Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INTEL NAND FLASH DECODER MLC Search Results

    INTEL NAND FLASH DECODER MLC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    INTEL NAND FLASH DECODER MLC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PF38F4060

    Abstract: PF48F6000 strataflash 512 p30 PF38F4060M PF556 R305A PF48F6000M0Y1BE INTEL NAND FLASH MEMORY pf58f00 3093* intel
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original
    PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 309823-009US PF38F4060 PF48F6000 strataflash 512 p30 PF38F4060M PF556 R305A PF48F6000M0Y1BE INTEL NAND FLASH MEMORY pf58f00 3093* intel

    intel nand flash

    Abstract: 29f16g08 JS29F08G08CANB2 INTEL FLASH MEMORY 29F intel nand intel date code marking NAND Flash 448MB intel 29F JS29F16G08FANB1 29F08G08
    Text: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Datasheet Product Features „ „ „ „ „ „ „ „ „ „ Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes)


    Original
    PDF JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 G08FANB1 29F16G08FANB1 1000pc intel nand flash 29f16g08 JS29F08G08CANB2 INTEL FLASH MEMORY 29F intel nand intel date code marking NAND Flash 448MB intel 29F JS29F16G08FANB1 29F08G08

    29f16g08

    Abstract: intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel
    Text: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks


    Original
    PDF JS29F04G08AAN29F04G08AANB1 1000pc JS29F08G08CANB1 29F08G08CANB1 JS29F16G08FANB1 29F16G08FANB1 8-Sep-2006 312774-007US 29f16g08 intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel

    JS29F08G08

    Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
    Text: Intel SS72 NAND Flash Memory JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 Product Features Organization: Basic NAND flash command set: Read performance: New commands: — — — Page size: x8: 2,112 bytes 2,048 + 64 bytes ; x16: 1,056 words (1,024 + 32 words)


    Original
    PDF JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 1000pc JS29F04G08BANB3 29F04G08BANB3 JS29F08G08 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand

    3076* intel

    Abstract: 3098* intel
    Text: Intel StrataFlash Cellular Memory M18 2048-Mbit M18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture Flash Performance — Flash Die Density: 256 or 512-Mbit — 96 ns Initial Read Access; 15 ns Asynchronous Page-Mode Read — PSRAM Die Density: 64 or 128-Mbit


    Original
    PDF 2048-Mbit 512-Mbit 128-Mbit 133MHz 3076* intel 3098* intel

    SFF-8144

    Abstract: 3185* Intel block diagram of sata SSD drive hp 6910p SFF-8201 Micro SATA
    Text: Intel X18-M/X25-M SATA Solid State Drive SSDSA1MH080G1, SSDSA2MH080G1 Advance Product Manual „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB Uses Intel NAND flash memory Multi-Level Cell MLC components Bandwidth Performance Specifications


    Original
    PDF X18-M/X25-M SSDSA1MH080G1, SSDSA2MH080G1 318512-002US. 319765-002US SFF-8144 3185* Intel block diagram of sata SSD drive hp 6910p SFF-8201 Micro SATA

    strataflash 512 p30

    Abstract: strataflash 512 p33 PF38F5060M0Y0C0 strataflash p33 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features „ High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original
    PDF 512-Mbit 256-Mbit 105-ball PF38F5060M0Y0B0 PF38F5070M0Y0B0 PF48F5500M0Y0B0 107-ball strataflash 512 p30 strataflash 512 p33 PF38F5060M0Y0C0 strataflash p33 3098* intel PF38F4050

    SSDSA2MH160G2

    Abstract: SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash
    Text: Intel X18-M/X25-M SATA Solid State Drive 34 nm Product Line SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 Product Manual „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell


    Original
    PDF X18-M/X25-M SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 322296-001US SSDSA2MH160G2 SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash

    MT9T031

    Abstract: MT29F16G08QAA LSP 1.20 DaVinci Linux V4L2 MT29F16G08 hd 5888 MUSBHDRC Samsung Nand 1 gb dm6446 VIDEO DISPLAY CONTROLLER CD 5888 sandisk mmc 16MB mk4032gax
    Text: LSP 1.20 DaVinci Linux Drivers Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.


    Original
    PDF SPRS496A MT9T031 MT29F16G08QAA LSP 1.20 DaVinci Linux V4L2 MT29F16G08 hd 5888 MUSBHDRC Samsung Nand 1 gb dm6446 VIDEO DISPLAY CONTROLLER CD 5888 sandisk mmc 16MB mk4032gax

    hp compaq 6910p

    Abstract: compaq 6910P notebook intel 8201 intel nand flash sata ssd controller sata ssd SFF-8144 6910P SSD 352 SSDSA1MH160G1
    Text: Intel X18-M/X25-M SATA Solid State Drive SSDSA1MH080G1, SSDSA2MH080G1, SSDSA1MH160G1, SSDSA2MH160G1 Product Manual „ „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell


    Original
    PDF X18-M/X25-M SSDSA1MH080G1, SSDSA2MH080G1, SSDSA1MH160G1, SSDSA2MH160G1 318512-002US. 319765-008US hp compaq 6910p compaq 6910P notebook intel 8201 intel nand flash sata ssd controller sata ssd SFF-8144 6910P SSD 352 SSDSA1MH160G1

    PF38F5060M0Y0C

    Abstract: SCSP M18 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original
    PDF 512-Mbit 256-Mbit 105-ball 105-ball PF38F5060M0Y0B0 PF38F5070M0Y0B0 PF48F5500M0Y0B0 PF48F5500M0Y1B0 PF38F5060M0Y0C SCSP M18 3098* intel PF38F4050

    PF38F4050

    Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original
    PDF 512-Mbit 256-Mbit PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 PF38F5566MMY0C0 105-ball 105-ball PF38F5060M0Y0B0 PF38F4050 PF48F SCSP M18 pf38f5060m0y 3098* intel

    SCSP M18

    Abstract: PF38F 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original
    PDF 512-Mbit 256-Mbit 16-bit 107-ball PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 SCSP M18 PF38F 3098* intel PF38F4050

    iNAND eMMC 4 41

    Abstract: sdhc timing intel emmc NXP Marking H2 muart ARMv5TE ARM926EJ
    Text: LPC3141/3143 Low-cost, low-power ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, and NAND flash controller Rev. 1 — 4 June 2012 Product data sheet 1. General description The NXP LPC3141/3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB


    Original
    PDF LPC3141/3143 ARM926EJ LPC3141/3143 ARM926EJ-S 10-bit LPC3141 iNAND eMMC 4 41 sdhc timing intel emmc NXP Marking H2 muart ARMv5TE ARM926EJ

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
    Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas


    Original
    PDF CH-9552 D-12681 SAMSUNG 4gb NAND Flash Qualification Report ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash

    Numonyx admux

    Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
    Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original
    PDF 128-Mbit 128-Mbit 32-Mbit x32SH x16SB x16/x32 Numonyx admux PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h

    intel date code marking NAND Flash

    Abstract: ARMv5TE instruction set MLC nand 2012 153 ball eMMC memory flash controller usb state machine for ahb to apb bridge iNAND eMMC 4 41 emmc spi bridge emmc bga 162 LPC3130FET180
    Text: LPC3130/3131 Low-cost, low-power ARM926EJ-S MCUs with high-speed USB 2.0 OTG, SD/MMC, and NAND flash controller Rev. 2 — 29 May 2012 Product data sheet 1. General description The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB 2.0 On-The-Go OTG , up to 192 KB SRAM, NAND flash controller, flexible external bus


    Original
    PDF LPC3130/3131 ARM926EJ-S LPC3130/3131 10-bit LPC3130 intel date code marking NAND Flash ARMv5TE instruction set MLC nand 2012 153 ball eMMC memory flash controller usb state machine for ahb to apb bridge iNAND eMMC 4 41 emmc spi bridge emmc bga 162 LPC3130FET180

    lpc3143

    Abstract: ARMv5TE instruction set movinand emmc LPC3141 lpc3143fet180 movinand Pinning movinand cd 6283 cs LCD Module intel 8080 movi nand
    Text: D D D D D R R R R R FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D D D R R A FT FT FT A A R R D Low-cost, low-power ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, and NAND flash controller R R R D D D F FT FT A A Preliminary data sheet A


    Original
    PDF ARM926EJ LPC3141/3143 32-bit ARM926EJ-S lpc3143 ARMv5TE instruction set movinand emmc LPC3141 lpc3143fet180 movinand Pinning movinand cd 6283 cs LCD Module intel 8080 movi nand

    Untitled

    Abstract: No abstract text available
    Text: LPC3152/3154 ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec Rev. 1 — 31 May 2012 Product data sheet 1. General description The NXP LPC3152/3154 combine an 180 MHz ARM926EJ-S CPU core, High-speed USB 2.0 OTG, 192 kB SRAM, NAND flash controller, flexible external bus interface, an


    Original
    PDF LPC3152/3154 ARM926EJ LPC3152/3154 ARM926EJ-S LPC3152

    iNAND eMMC 4 41

    Abstract: LCD display intel 8080 sot930 top 227 battery charger USBVDDA33 emmc 4.41 spec emmc MOVinand spec
    Text: LPC3152/3154 ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec Rev. 1 — 31 May 2012 Product data sheet 1. General description The NXP LPC3152/3154 combine an 180 MHz ARM926EJ-S CPU core, High-speed USB 2.0 OTG, 192 kB SRAM, NAND flash controller, flexible external bus interface, an


    Original
    PDF LPC3152/3154 ARM926EJ LPC3152/3154 ARM926EJ-S LPC3152 iNAND eMMC 4 41 LCD display intel 8080 sot930 top 227 battery charger USBVDDA33 emmc 4.41 spec emmc MOVinand spec

    part number decoder toshiba NAND Flash MLC

    Abstract: No abstract text available
    Text: Product data sheet Industrial USB Flash Drive unitedCONTRAST II USB2.0 high speed B U: Fl a sh Pr od u ct s Date : De ce m be r 18, 20 1 2 R e vi si o n: 1 .3 0 Fi le : u ni te d C O N TRA ST _E x BP_ dat a_ sh e e t_R e v 13 0. do c USB Flash Drive unitedCONTRAST II


    Original
    PDF 512MByte 16GByte CH-9552 Rev130 part number decoder toshiba NAND Flash MLC

    LPC3141

    Abstract: LPC3143 LPC314x LPC3141FET180 LPC3143FET180 movinand emmc 4.5 128 by 64 lcd ARMv5TE instruction set movinand inand emmc
    Text: D D R R R R R D D D FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D Low-cost, low-power ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, and NAND flash controller R R R D D D F FT FT A A Preliminary data sheet A


    Original
    PDF ARM926EJ LPC3141/3143 32-bit ARM926EJ-S LPC3141 LPC3143 LPC314x LPC3141FET180 LPC3143FET180 movinand emmc 4.5 128 by 64 lcd ARMv5TE instruction set movinand inand emmc

    p5ld2 se

    Abstract: No abstract text available
    Text: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed B U: Fl a sh Pr od u ct s Date : Ju l y 2 , 2 0 13 Re vi si o n : 1 .4 1 Fi le : U - 1 10 _da ta_ s he e t_ UI - x x BP_ Re v 14 1 .d oc U-110 Series USB Flash Drive Module


    Original
    PDF U-110 16GByte CH-9552 Rev141 p5ld2 se

    LPc3154

    Abstract: movinand 3122 adj LPC3154FET208 movinand emmc TFBGA208 aes 3595 eMMC intel emmc spec 2FTD
    Text: R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D D D R R A FT FT FT A A R R D ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec R R R D D D F FT FT A A Preliminary data sheet A Rev. 0.11 — 26 August 2009


    Original
    PDF ARM926EJ LPC3152/3154 LPC3152/3154 LPC3152 LPc3154 movinand 3122 adj LPC3154FET208 movinand emmc TFBGA208 aes 3595 eMMC intel emmc spec 2FTD