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    INTEL CORPORATION ESD TESTING FLASH MEMORY Search Results

    INTEL CORPORATION ESD TESTING FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    INTEL CORPORATION ESD TESTING FLASH MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1346

    Abstract: 1024KX8 28F400 272818 intel 282 292130 SmartDie 29053
    Text: PRELIMINARY 28F400BVC 4-MBIT 256Kx16, 512Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification • Intel SmartVoltage Technology ■ ■ ■ ■ ■ ■ Software EEPROM Emulation with — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation


    Original     		PDF 28F400BVC 256Kx16, 512Kx8) x8/x16-Selectable 28F400 32-bit 16-Kbyte TwBVC-B80 transistor 1346 1024KX8 272818 intel 282 292130 SmartDie 29053

    SmartDie

    Abstract: 28F800 272819 transistor 2201 1024Kx8
    Text: PRELIMINARY 28F800BV/CE 8-Mbit 512Kx16, 1024Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification • Intel SmartVoltage Technology ■ ■ ■ ■ ■ ■ Software EEPROM Emulation with — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation


    Original     		PDF 28F800BV/CE 512Kx16, 1024Kx8) x8/x16-Selectable 28F800 32-biX28F800BV-T70 X28F800BV-B70 X28F800CE-T120 X28F800CE-B120 SmartDie 272819 transistor 2201 1024Kx8

    SmartDie

    Abstract: intel 3601 021 1172 28F400
    Text: A PRELIMINARY 28F400BV-T/B 4-MBIT 256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartDie Product Specification • Intel SmartVoltage Technology ■ ■ ■ ■ ■ — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at


    Original     		PDF 28F400BV-T/B x8/x16-Selectable 28F400 32-bit 16-KB 96-KB 28F400BV-T/B AB-60 AP-604 SmartDie intel 3601 021 1172

    B1560

    Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325
    Text: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP


    Original     		PDF 28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 B1205 b1770 b439 AP-325

    b982

    Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
    Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    Original     		PDF 28F008SA 64-Kbyte X28F008SA-120 AP-359 AP-360 25F008SA AP-364 b982 b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305

    b998

    Abstract: B83 004 1024K b1545 28F010 b83 006 b1257 b175 transistor B1545 AP-325
    Text: 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 1 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 2 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP


    Original     		PDF 28F010 1024K X28F400BX-T80 ER-20 ER-24 RR-60 b998 B83 004 1024K b1545 b83 006 b1257 b175 transistor B1545 AP-325

    intel 1302 ROM

    Abstract: 292099 Software Drivers Application Note 5002 28F008SA 28F008SAC AP-360 AP-364 X28F008SAC-120 SmartDie
    Text: PRELIMINARY 28F008SAC 8-MBIT 1-MBIT X 8) FlashFile MEMORY DEVICE SmartDie™ Product Specification • Same Function as 28F008SA-120 ■ ■ ■ ■ — New Reduced Die Size High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks


    Original     		PDF 28F008SAC 28F008SA-120 64-Kbyte X28F008SAC-120 28F008SA AP-359, AP-360, intel 1302 ROM 292099 Software Drivers Application Note 5002 AP-360 AP-364 X28F008SAC-120 SmartDie

    C9042

    Abstract: motherboard major problems computer motherboard circuit diagram circuit diagram of flash bios latest computer motherboard circuit diagram PC MOTHERBOARD CIRCUIT diagram circuit diagram of motherboard update pc motherboard circuit diagram dead motherboard bios recovery testing good or bad electronic components circuit
    Text: E AP-636 APPLICATION NOTE Preventing BIOS Failures Using Intel Boot Block Flash Memory December 1998 Order Number: 292192-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF AP-636 C9042 motherboard major problems computer motherboard circuit diagram circuit diagram of flash bios latest computer motherboard circuit diagram PC MOTHERBOARD CIRCUIT diagram circuit diagram of motherboard update pc motherboard circuit diagram dead motherboard bios recovery testing good or bad electronic components circuit

    digital signature block diagram

    Abstract: motherboard major problems MOTHERBOARD CIRCUIT diagram explained dead motherboard bios recovery 28F002BV-T motherboard electronic circuit diagram circuit diagram of flash bios bios programmer computer motherboard circuit diagram image 29219* intel
    Text: E AP-636 APPLICATION NOTE Preventing BIOS Failures Using Intel’s Boot Block Flash Memory December 1996 Order Number: 292192-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF AP-636 digital signature block diagram motherboard major problems MOTHERBOARD CIRCUIT diagram explained dead motherboard bios recovery 28F002BV-T motherboard electronic circuit diagram circuit diagram of flash bios bios programmer computer motherboard circuit diagram image 29219* intel

    block diagram for Intel SSD

    Abstract: block diagram of sata SSD drive SSDSA2SH064G101 SFF-8201 X25-E sata ssd controller 320520-002US SSDSA2SH064G1 INTEL NAND FLASH SSDSA2SH032G101
    Text: Intel X25-E SATA Solid State Drive SSDSA2SH032G1, SSDSA2SH064G1 Product Manual „ „ „ „ „ „ „ Available in 2.5” Form Factor Capacity: 32 GB, 64 GB Uses Intel NAND flash memory Single Level Cell SLC components Bandwidth Performance Specifications


    Original     		PDF X25-E SSDSA2SH032G1, SSDSA2SH064G1 318776-003US. 319984-003US block diagram for Intel SSD block diagram of sata SSD drive SSDSA2SH064G101 SFF-8201 sata ssd controller 320520-002US SSDSA2SH064G1 INTEL NAND FLASH SSDSA2SH032G101

    intel nand flash

    Abstract: intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability
    Text: White Paper Intel Flash Memory Intel® NAND Flash Memory for Intel® Turbo Memory Intel® NAND Flash Memory for Intel® Turbo Memory White Paper Introduction Overview Intel has introduced a new non-volatile memory NVM layer into the memory hierarchy in the mobile computing platform. This new NVM


    Original     		PDF 0507/DS/PD/PDF 316093-001US intel nand flash intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability

    transistor t 2190

    Abstract: intel 2114 SmartDie 28F010
    Text: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K X2BF010-90 ER-20 ER-24, RR-60, AP-316, AP-325, USA/DP-019/694 transistor t 2190 intel 2114 SmartDie

    probe wafer

    Abstract: SmartDie 1346 transistor 1346
    Text: PRELIMINARY 28F400BVC 4-MBIT 256Kx16, 512Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification M Intel SmartVoltage Technology • ■ ■ ■ ■ — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60%


    OCR Scan     		PDF 28F400BVC 256Kx16, 512Kx8) x8/x16-Sefectable 28F400 32-bit 16-Kbyte 96-Kbyte X28F400BVC-T80 X20F4OOBVC-B8O probe wafer SmartDie 1346 transistor 1346

    Untitled

    Abstract: No abstract text available
    Text: intei 28F400BVC 4-MBIT 256Kx16, 512Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V Vpp


    OCR Scan     		PDF 28F400BVC 256Kx16, 512Kx8) x8/x16-Selectable 28F400 32-bit 16-Kbyte 96-Kbyte 128-Kbyte 400BVC-B80

    intel 28F001BXT

    Abstract: SmartDie 29040 28F001BX-T AP-341 Designing an Updatable BIOS
    Text: intei. 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification m High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot


    OCR Scan     		PDF 28F001BX-T/B 28F001B 28F001BX-T/28F001BX-B ER-20, RR-60, AP-316, AP-341, intel 28F001BXT SmartDie 29040 28F001BX-T AP-341 Designing an Updatable BIOS

    Untitled

    Abstract: No abstract text available
    Text: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325,

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 |as Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K 28F400B EFt-20, ER-24, RR-60, AP-316, AP-325,

    SmartDie

    Abstract: 28F010
    Text: intel PEHHLOIMOIiMIERf 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K ER-20, ER-24, RR-60, AP-316, AP-325, SmartDie

    2046K

    Abstract: 28F020 SmartDie 29024
    Text: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024

    Untitled

    Abstract: No abstract text available
    Text: in te i • 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification • High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot


    OCR Scan     		PDF 28F001BX-T/B X28F001BX-T70 X28F001BX-B70 X28F001BX-T90 X28F001BX-B90 X28F001BX-T120 X28F001BX-B120 28F001BX-T/28F001BX-B ER-20, RR-60,

    Intel 4001

    Abstract: 4001 intel rom
    Text: in tj 28F400BX-T 4-MBIT 256K x 16,512K x 8 BOOT BLOCK FLASH MEMORY SmartDie Product Specification m x8/x16 Input/Output Architecture • ■ ■ ■ ■ ■ — 28F400BX-T — For High-Performance and HighIntegration 16-Bit and 32-Bit CPUs Optimized High-Density Blocked


    OCR Scan     		PDF 28F400BX-T x8/x16 16-Bit 32-Bit X28F010-90 28F200BX-T/B, 28F200BX-T/B 28F400BX-T/B, 28F004BX-T/B Intel 4001 4001 intel rom

    ER-27

    Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
    Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte F008S 120ns AP-359, AP-360, 25F008SA AP-364, ER-27 5498 transistor Intel Corporation esd testing flash memory SmartDie

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte X28F008SA-120 AP-359, AP-360, 25F008SA AP-364

    Intel 4001

    Abstract: 4001 intel rom 4001 intel SmartDie
    Text: ¡niel P ß S U y iM lD N lM V 28F400BX-T 4-MBIT (256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY SmartDle Product Specification x8/x16 Input/Output Architecture — 28F400BX-T — For High-Performance and HighIntegration 16-Bit and 32-Bit CPUs Optimized High-Density Blocked


    OCR Scan     		PDF 28F400BX-T 28F200BX-T/B, 28F200BX-T/B 28F400BX-T/B, 28F004BX-T/B AP-363, ER-28, ER-29, Intel 4001 4001 intel rom 4001 intel SmartDie