MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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1k x 4
Abstract: 2148H LD2114AL-4 ld2114 QP2114 2125AL-2 LD2114AL enhance 168 2125AL qD2125AL
Text: RAM FAMILY EXPRESS • Standard Temperature Range ■ 168 ±8 Hour Burn-In Available ■ Extended Temperature Range - 4 0 t,C - + 85°C Available ■ Inspected to 0.1% AQL The Intel EXPRESS RAM family is a series of random-access memories which have received additional
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2147H
1k x 4
2148H
LD2114AL-4
ld2114
QP2114
2125AL-2
LD2114AL
enhance 168
2125AL
qD2125AL
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2118 intel
Abstract: 2114A 2114 1k x 4 2114 1k x 16 RAM intel 2118 FAMILY 2114AL-4 2148H 2114A-4 qD2125AL ram 2114
Text: i n y RAM FAMILY EXPRESS • Standard Temperature Range ■ Extended Temperature Range ~40°C-+85°C Available ■ 168 ±8 Hour Burn-in Available ■ Inspected to, 0.1% AQL The Intel EXPRESS RAM family is a series of random-access memories which have received additional
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AFW021S3A
2147M
2147H
2118 intel
2114A
2114 1k x 4
2114 1k x 16 RAM
intel 2118 FAMILY
2114AL-4
2148H
2114A-4
qD2125AL
ram 2114
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8086 microprocessor book by A K RAY
Abstract: coffee vending machine circuit diagram microprocessor coffee vending machine Intel AP-132 block diagram of coffee vending machine 74S112 cross reference 74S74C coffee vending machine using 8051 microcontroller disadvantages of intel 8051 74155 PIN DIAGRAM
Text: in y APPLICATION NOTE AP-132 June 1982 / * v <b + >5> * / • sr A ? INTEL CORPORATION, 1982 jf / 4 Order Number: 210443-001 3-40 AP-132 1 INTRODUCTION the component count and overhead costs, both in design and implementation. 1.1 RAM Overview Conversely, static RAMs need very little external control
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AP-132
8086 microprocessor book by A K RAY
coffee vending machine circuit diagram
microprocessor coffee vending machine
Intel AP-132
block diagram of coffee vending machine
74S112 cross reference
74S74C
coffee vending machine using 8051 microcontroller
disadvantages of intel 8051
74155 PIN DIAGRAM
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P80A49H
Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.
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RMX/80,
P80A49H
8035HL
F1L 250 V fuse
BPK-70
interfacing 8275 crt controller with 8086
i8282
hall marking code A04
Transistor AF 138
DK55
82720 intel
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intel 2148H
Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
Text: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology
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2148H
2148H-2
2148H-3
2148HL-3
2148HL
4096-bit
2144H-3/HL-3
intel 2148H
INTEL 3214
2149H
intel 3212
2148 static ram
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2148A
Abstract: intel 2147 intel 2114a c 2168 2168 4Kx4 2148H
Text: Ä P Ä K g i OMFÛfôBMTOlM 2168 4096 x 4-BIT STATIC RAM 2168 Maximum Access Time ns 55-100 Maximum Active Current (mA) 150 Maximum Standby Current (mA) 2114A/2148H Upgrade 40 • Equal Access and Cycle Times Automatic Power-Down ■ High Density 20-Pin Package
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114A/2148H
20-Pin
384-bit
a0-a11
2148A
intel 2147
intel 2114a
c 2168
2168
4Kx4
2148H
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intel 2114 static ram
Abstract: intel 2114 AN2148 2114 intel 2114L-3 91l24 2114A-4 a21l 2114AL-4 2114A-5
Text: - 4 K nMOS S t a t i c RAM ^1 0 2 4 x 4 n. ÌBJ&KB m % a « OC) TAAC max ns) TCAC max (ns) TOD max TOE TOH «in (ns) (ns) (ns) 10 100 TDH rain min TWR max V D D or V C C min win (ns) (ns) (ns) (ns) (ns) (V) 200 TWP TDS TWO 1 8 P I N I DD max (mA) 2114 A t) [*typ]
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18PIN
114A-4
An2148-35
Am2148-55
An2I48-70
Am2149-55
intel 2114 static ram
intel 2114
AN2148
2114 intel
2114L-3
91l24
2114A-4
a21l
2114AL-4
2114A-5
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2148H
Abstract: intel 2148H 2i48 2148H-2 intel 2148 TLS 2550 2148H-3 2148HL 2148HL-3 2149H
Text: in t e i 2148H 1024 x 4 BIT STATIC RAM 2148H-3 2148H-2 2148H 2148HL-3 2148HL 45 55 70 55 70 Max. Active Currant mA 180 180 180 125 125 Max. Standby Current (mA) 30 30 30 20 20 Max. Access Time (ns) • Automatic Power-Down Equal Access and Cycle Times ■ Industry Standard 2114A and
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2148H-2
2148H-3
2148H
2148HL-3
2148HL
18-Pin
2149H
4096-bit
500mV
intel 2148H
2i48
intel 2148
TLS 2550
2148HL
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231369
Abstract: 2148H 2149H 2149H-1 2149H-2 2149H-3 2149HL
Text: 2149H 1024 x 4-BIT STATIC RAM Max. Address Access Time ns Max. Chip Select Access Time (ns) 2149H-1 2149H-2 2149H-3 2149H 2149HL 35 45 55 70 70 20 25 30 30 150 150 125 20 150 150 Max. Active Current (mA) Common Data input and Output Improved Performance Margins
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2149H
2149H-1
2149H-2
2149H-3
2149H
2149HL
2148H
4096-bit
231369
2149HL
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2149H-3
Abstract: 2148H
Text: 2149H 1024 x 4-BIT STATIC RAM 2149H 2149HL 55 70 70 25 30 30 150 150 125 2149H-1 2149H-2 2149H-3 Max. Address Access Time ns 35 45 Max. Chip Select Access Time (ns) 20 20 Max. Active Current (mA) 150 150 Improved Performance Margins Common Data Input and Output
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2149H
2149H-1
2149H-2
2149H-3
2149HL
Time--20
2148H
4096-bit
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2148H
Abstract: No abstract text available
Text: in t e i 2149H 1024 x 4-BIT STATIC RAM 2149H 2149H-2 2149H-3 Max. Address Access Time ns 45 55 70 70 Max. Chip Select Access Time (ns) 20 25 30 30 180 180 180 125 Max. Active Current (mA) Fast Chip Select Access Time— 20ns Maximum 2149HL High Density 18-Pin Package
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2149H
2149H-2
2149H-3
2149HL
18-Pin
2148H
4096-bit
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51C69
Abstract: 51C68-35L 51C68 2148H 10 35L 51C68-30 51C68-35 290091
Text: 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock
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51C68
51C68-30
51C68-35
51C68-35L
20-Pin
2148H
51C68
384-bit
51C69
51C68-35L
10 35L
290091
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51C69
Abstract: acs 08 5s 290091
Text: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 M ax. A c c e s s T im e ns 30 35 35 M ax. A ctive C urren t (m A ) 90 90 65 M ax. S tand by C u rren t (m A) 10 10 5 51C68-35L Double Metal CHMOS III Technology High Density 20-Pin Package
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51C68
51C68-30
51C68-35
51C68-35L
20-Pin
2148H
384-bit
51C68
51C69
acs 08 5s
290091
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2148H
Abstract: 150a gto 2149H 2149H-2 2149H-3 2149HL 2149HL-3
Text: intèf 2149H 1024 x 4-BIT STATIC RAM 2149H-3 2149H-2 Max. Address Access Time ns Max. Chip Select Access Time (ns) Max. Active Current (mA) 45 20 Fast Chip Select Access Time—20ns Maximum 2149HL-3 2149HL 70 70 55 25 30 25 30 125 125 180 180 2149H 55 180
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2149H-2
2149H-3
2149H
2149HL-3
2149HL
18-Pin
2148H
4096-bit
150a gto
2149HL
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Untitled
Abstract: No abstract text available
Text: H M 6 148H P S e rie s 1024-word x 4-bit High Speed Static CMOS RAM • FEA TU RES Fast Access T im e . 45/55ns max Low Power Standby and Low Power Operation; Standby: 100¿iW (typ.). Operation: 175mW(typ.)
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1024-word
45/55ns
175mW
2148H
HM6148HP
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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Untitled
Abstract: No abstract text available
Text: HM6148HLP Series 1 0 2 4 -word x 4 -b it High Speed Static CMOS RAM • FEATURES • Low Power Standby and Low Power Operation; Standby:5jiW typ. . Operation: 175mW (typ.) • Fast Access Tim e: 45/55ns (max) • Capability o f Battery Back Up Operation •
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HM6148HLP
175mW
45/55ns
2148H
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HM6148HLP-45
Abstract: 2148H HM6148HLP intel 2148H
Text: HM6148HLP Series 1 0 2 4 - w o rd X 4 - b it High S p e e d S t a t i c C M O S R A M I FEA TU RES Low Power Standby and Low Power Operation; Standby:5jiW typ. , Operation: 175mW (typ.) Fast Access Time: 45/55ns (max) Capability of Battery Back Up Operation
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HM6148HLP
1024-word
175mW
45/55ns
2148H
TaS70
HM6148HLP-45
2148H
intel 2148H
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HM6148HP-45
Abstract: 2148H
Text: HM6148HP Series 1024-word x 4-bit High Speed Static CMOS RAM • FEA TU RES Fast Access T im e . 45/55ns max Low Power Standby and Low Power Operation; Standby: 100/iW (typ.). Operation: 175mW (typ.) • • •
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HM6148HP
1024-word
45/55ns
100/iW
175mW
2148H
64X64
HM6148HP-45
2148H
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intel 2148H
Abstract: HM6148HLP-45 2148H HM6148HLP-55 Hitachi Scans-001 HM6148
Text: HM6148HLP Series 1 0 2 4 - w o rd x 4 - b i t High S p e e d S t a tic CM OS RAM • FEATURES • Low Power Standby and Low Power Operation; Standby:5jiW typ. . Operation: 175mW (typ.) • Fast Access Tim e: 45/55ns (max) • Capability o f Battery Back Up Operation
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HM6148HLP
1024-word
175mW
45/55ns
2148H
7aS70
intel 2148H
HM6148HLP-45
2148H
HM6148HLP-55
Hitachi Scans-001
HM6148
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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