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    INTEGRATED BALLAST Search Results

    INTEGRATED BALLAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation

    INTEGRATED BALLAST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


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    N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    SL 100 NPN Transistor

    Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
    Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability ●


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    BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V PDF

    TRANSISTOR SMD 13W

    Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
    Text: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 replaces previous version AN98091 Philips Semiconductors Philips Semiconductors CFL 13W demo PCB with UBA2021 for Integrated lamp-ballast designs Application Note


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    UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL PDF

    BULD125KC

    Abstract: electronic ballast with npn transistor
    Text: BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs


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    BULD125KC O-220 BULD125KC electronic ballast with npn transistor PDF

    JESD97

    Abstract: L6382D5 L6382D5TR SO20 mosfet driver
    Text: L6382D5 Power management unit for microcontrolled ballast Features • Integrated high-voltage start-up ■ 4 drivers for PFC, half-bridge & pre-heating MOSFETs ■ Fully integrated power management for all operating modes ■ 5V microcontroller compatible


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    L6382D5 SO-20 L6382D5 JESD97 L6382D5TR SO20 mosfet driver PDF

    BULD85KC

    Abstract: "Safe Operating Area and Thermal Design" silicon
    Text: BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs


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    BULD85KC O-220 BULD85KC "Safe Operating Area and Thermal Design" silicon PDF

    Untitled

    Abstract: No abstract text available
    Text: L6382D5 Power management unit for microcontrolled ballast Features • Integrated high-voltage start-up ■ 4 drivers for PFC, half-bridge & pre-heating MOSFETs ■ Fully integrated power management for all operating modes ■ 5V microcontroller compatible


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    L6382D5 SO-20 L6382D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: L6382D5 Power management unit for microcontrolled ballast General features • Integrated high-voltage start-up ■ 4 drivers for PFC, half-bridge & pre-heating MOSFETs ■ Fully integrated power management for all operating modes ■ 5V microcontroller compatible


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    L6382D5 SO-20 L6382D5 PDF

    T1 SL 100 NPN Transistor

    Abstract: SL 100 NPN Transistor BULD50SL BULD50KC
    Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs


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    BULD50KC, BULD50SL O-220 T1 SL 100 NPN Transistor SL 100 NPN Transistor BULD50SL BULD50KC PDF

    function of diac

    Abstract: diac BIPOLAR block diagram of diac DIAC transistor diac BIPOLAR DIAC DATASHEET DIAC EQUIVALENT circuit half-bridge converter MOROCCO st diac
    Text: VK06TL / VK06TLS ELECTRONIC DRIVER FOR TL BALLASTS DATA BRIEF TYPE VK06TL VK06TLS BV Icrms 600 V 0.7 A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR GROUND DIODE • ACCURATE 5% PRECISION tON CONTROL ■ INTEGRATED DIAC FUNCTION


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    VK06TL VK06TLS SO-16 VK06TL13TR VK06TL, function of diac diac BIPOLAR block diagram of diac DIAC transistor diac BIPOLAR DIAC DATASHEET DIAC EQUIVALENT circuit half-bridge converter MOROCCO st diac PDF

    ccfl driver

    Abstract: UBA2070 UBA2070P UBA2070T ignition stroke
    Text: INTEGRATED CIRCUITS DATA SHEET UBA2070 600 V CCFL ballast driver IC Objective specification File under Integrated Circuits, IC11 2001 Sep 27 Philips Semiconductors Objective specification 600 V CCFL ballast driver IC UBA2070 FEATURES GENERAL DESCRIPTION • Current controlled operation


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    UBA2070 UBA2070 SCA73 613502/01/pp20 ccfl driver UBA2070P UBA2070T ignition stroke PDF

    FAN7529 equivalent

    Abstract: FQPF5N60C equivalent fan7711 equivalent UF4007 equivalent FAN7529 ELECTRONIC BALLAST DIAGRAM 20w FQPF5N60C capacitor 103 1KV fqpf5N50C equivalent 103 1KV CERAMIC CAPACITOR
    Text: FAN7711 Ballast Control Integrated Circuit Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN7711, developed with Fairchild’s unique highvoltage process, is a ballast control integrated circuit IC for a fluorescent lamp. FAN7711 incorporates a preheating


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    FAN7711 FAN7711, FAN7711 FAN7529 equivalent FQPF5N60C equivalent fan7711 equivalent UF4007 equivalent FAN7529 ELECTRONIC BALLAST DIAGRAM 20w FQPF5N60C capacitor 103 1KV fqpf5N50C equivalent 103 1KV CERAMIC CAPACITOR PDF

    RUN13

    Abstract: zener diode 7.6v
    Text: Data Sheet PD No. 60179-F IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    60179-F IR21571 150uA) MS-001A) MS-012AC) RUN13 zener diode 7.6v PDF

    213E

    Abstract: IR21571 MS-012AC transistor ignition
    Text: Data Sheet PD No. 60179-H IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    60179-H IR21571 150uA) IR21571 MS-001A) MS-012AC) 213E MS-012AC transistor ignition PDF

    EE1916

    Abstract: zener diode c5 IPH FAN7710 EE-1916 280T EE1916S capacitive discharge ignition EE1916S Fluorescent BALLAST low loss ignition driver ignition mosfet
    Text: FAN7710V Ballast Control IC for Compact Fluorescent Lamps Features Description „ Integrated Half-Bridge MOSFET The FAN7710V, developed using Fairchild’s unique highvoltage process and system-in-package SiP concept, is a ballast control integrated circuit (IC) for a compact


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    FAN7710V FAN7710V FAN7710V, EE1916 zener diode c5 IPH FAN7710 EE-1916 280T EE1916S capacitive discharge ignition EE1916S Fluorescent BALLAST low loss ignition driver ignition mosfet PDF

    EE1916

    Abstract: zener diode c5 IPH EE1916S Fluorescent BALLAST low loss zvs driver fairchild switching power supply IC select guide 440v ac voltage regulator fluorescent lamp inverter kW 280T EE1916S Ballast Control IC
    Text: FAN7710V Ballast Control IC for Compact Fluorescent Lamps Features Description „ Integrated Half-Bridge MOSFET The FAN7710V, developed using Fairchild’s unique highvoltage process and system-in-package SiP concept, is a ballast control integrated circuit (IC) for a compact


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    FAN7710V FAN7710V FAN7710V, 310at EE1916 zener diode c5 IPH EE1916S Fluorescent BALLAST low loss zvs driver fairchild switching power supply IC select guide 440v ac voltage regulator fluorescent lamp inverter kW 280T EE1916S Ballast Control IC PDF

    EE1916

    Abstract: 280T EE1916S FAN7710 EE1916S Ee19-16 12v ballast ic HALF-bridge inverter fan7710n 1N4007 UF4007
    Text: FAN7710 Ballast Control IC for Compact Fluorescent Lamps Features Description „ Integrated Half-Bridge MOSFET The FAN7710, developed using Fairchild’s unique highvoltage process and system-in-package SiP concept, is a ballast control integrated circuit (IC) for a compact


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    FAN7710 FAN7710, FAN7710 EE1916 280T EE1916S EE1916S Ee19-16 12v ballast ic HALF-bridge inverter fan7710n 1N4007 UF4007 PDF

    C 13 PH Zener diode

    Abstract: 213E IR21571 IR21571S MS-012AC
    Text: Data Sheet PD No. 60179 revL IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    IR21571 150uA) f1-6015 MS-001A) MS-012AC) 16-Lead IR21571 C 13 PH Zener diode 213E IR21571S MS-012AC PDF

    213E

    Abstract: IR21571 MS-012AC
    Text: Data Sheet PD No. 60179-G IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    60179-G IR21571 150uA) IR21571 MS-001A) MS-012AC) 23irf 213E MS-012AC PDF

    213E

    Abstract: IR21571 MS-012AC 4.7E T-Flip-Flop
    Text: Data Sheet PD No. 60179-I IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    60179-I IR21571 150uA) IR21571 16-Lead MS-001A) MS-012AC) 213E MS-012AC 4.7E T-Flip-Flop PDF

    zener diode ph 48

    Abstract: No abstract text available
    Text: Data Sheet PD No. 60179 revK IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)


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    IR21571 150uA) 16-lead MS-001A) MS-012AC) zener diode ph 48 PDF

    D008

    Abstract: SL 100 NPN Transistor
    Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •


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    BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor PDF

    BUL791

    Abstract: BULD125KC TO-5 PACKAGE case for transistor
    Text: c f AN SYS BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IUCTROMICS LIMITED Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode t rr Typically 1 TO-220 PACKAGE TOP VIEW


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    BULD125KC T0220 BUL791 BULD125KC TO-5 PACKAGE case for transistor PDF

    BULD85KC

    Abstract: No abstract text available
    Text: « JÜAN SYS fUCTROMGS LIMITED BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability • Diode t rr Typically 1 TO-220 PACKAGE


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    BULD85KC T0220 BULD85KC PDF