6131a
Abstract: GR-468-CORE 2933 APLMP1000 axon GR468-CORE DWDM AXON
Text: Optoelectronic Devices Light Monitoring PIN Photodector APLMP1000 The Axon Photonics APLMP1000 is a wide-area PIN photodetector device based on InGaAs/InP material. This product is developed for the intensity detection of wideband long wavelengths. With different integration levels
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APLMP1000)
APLMP1000
GR-468-CORE
10Corporate
6131a
2933
axon
GR468-CORE
DWDM AXON
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transistor C3866
Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)
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R5509-42/R5509-72
SE-171-41
TPMH1267E02
transistor C3866
C3866
C3866* transistor
c3866 transistor
C3866 FE
M7824
FE P C3866
FE P C3866 17
R5509-42
pmt divider circuit
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optical source
Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
Text: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength
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14-pin
optical source
Fabry-Perot 1550 nm
Fabry-Perot 1550 nm butterfly
Laser InP
laser transmitter
datasheet laser 1550 spectral
laser 1550 nm
laser transmitter 1550 nm
TO56 laser
TO-CAN
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InP Photonics
Abstract: PIN-TIA application
Text: P/N: T-11-2315C-02-XX 155 Mbps PIN-TIA Receiver Modules Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Responsivity Single +5V operation -40~85ºC operating temperature Single mode / Multi mode Application High Speed 8 Pin Package with SC Port
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T-11-2315C-02-XX
9/125m
DS-6169
InP Photonics
PIN-TIA application
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25gbps pin-tia
Abstract: No abstract text available
Text: P/N: T-11-2500-X3-XXX/XXX-XX 2.5Gbps PIN-TIA Receiver Modules 3.3V Features z z z z z InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature Packaging
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T-11-2500-X3-XXX/XXX-XX
DS-5765
25gbps pin-tia
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Untitled
Abstract: No abstract text available
Text: P/N: T-11-1250-X3-XXX-X-XX PIN-TIA Receiver Modules-Receptacle & Pigtailed 3.3V Features z z z z z InGaAs/InP PIN Photodiode with trans-impedance amplifier High Sensitivity with AGC* Differential ended output Single +3.3V operation -40~85°C operating temperature
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T-11-1250-X3-XXX-X-XX
25Gbps
DS-6003
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Untitled
Abstract: No abstract text available
Text: P/N: T-11-2500-D3-SXX-XX 2.5 Gbps PIN-TIA Receiver Modules-ROSA 3.3V Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature z z z z z
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T-11-2500-D3-SXX-XX
DS-5976
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PIN-TIA
Abstract: No abstract text available
Text: P/N: T-11-2315T-08-XX 155Mbps PIN-TIA Receiver modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Sensitivity l Single +3.3V operation l -40~85° C operating temperature l For Single-mode and Multi-mode Application l High Speed
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T-11-2315T-08-XX
155Mbps
DS-5244
PIN-TIA
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InGaAs Photodiode 1550nm
Abstract: photodiode responsivity 1550nm with FC connector
Text: P/N: R-11-040AX-P-SXX/XXX-X-XX 40um Analog InGaAs PIN Photodiode Modules-pigtailed Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310nm and 1550nm Low dark current Low intermodulation distortion High responsivity Hermetically sealed 3-pin metal case
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R-11-040AX-P-SXX/XXX-X-XX
1310nm
1550nm
9/125m
DS-6033
InGaAs Photodiode 1550nm
photodiode responsivity 1550nm with FC connector
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InGaas PIN photodiode
Abstract: InGaAs Photodiode 1550nm R-11-075B-R-SFC
Text: P/N: R-11-075X-X-XXX-X-XX InGaAs PIN Photodiode Modules Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Fast pulse response -40~85°C operating temperature Hermetically sealed 3-pin metal case Packaging
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R-11-075X-X-XXX-X-XX
1310m
1550nm
9/125m
50/125m
5/125m
DS-5838
InGaas PIN photodiode
InGaAs Photodiode 1550nm
R-11-075B-R-SFC
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Untitled
Abstract: No abstract text available
Text: Near-infrared streak camera C11293-02 New from Hamamatsu For picosecond time-resolved measurements of low level light emissions in the near-infrared region 1000 nm to 1650 nm with semiconductor photocathode (InP/InGaAs) 1400 1500 The new C11293-02 streak camera delivers much higher sensitivity in the
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C11293-02
C11293-02
C11293
SHSS0014E03
MAY/2012
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InGaAs Photodiode 1550nm
Abstract: Analog Photodiode, 1550nm, photodiode responsivity 1550nm with FC connector Analog Photodiode 1550nm PIN photodiode InGaAs 1550nm Photodiode 1550nm bandwidth
Text: P/N: R-11-075AX-P-SXX/XXX-X-XX 75um Analog InGaAs PIN Photodiode Modules-pigtailed Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Low intermodulation distortion High responsivity Hermetically sealed 3-pin metal case
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R-11-075AX-P-SXX/XXX-X-XX
1310m
1550nm
550MHz
9/125m
DS-5839
InGaAs Photodiode 1550nm
Analog Photodiode, 1550nm,
photodiode responsivity 1550nm with FC connector
Analog Photodiode 1550nm
PIN photodiode InGaAs 1550nm
Photodiode 1550nm bandwidth
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Untitled
Abstract: No abstract text available
Text: P/N: T-11-2315T-04-XX 155 Mbps PIN-TIA Receiver Modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Responsivi ty l Single +5V operation l -40~85° C operating temperature l For Single-mode Application l High Speed l 8 Pin Package with ST Port
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T-11-2315T-04-XX
DS-5376
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Untitled
Abstract: No abstract text available
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in
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G9494-256D/-512D
KMIR1014E05
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with
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G9203-256D
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
B1201,
KMIR1013E06
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in
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G9494-256D/-512D
B1201,
KMIR1014E08
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operation of ic 741
Abstract: s6841 transistor 1BW S8119 LE UW
Text: PHOTO IC Photo IC for optical switch NEW S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.
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S6841,
S8119
S6841
S8119
S6841:
S8119:
SE-171
KPIC1019E01
operation of ic 741
transistor 1BW
LE UW
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with
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G9203-256D
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
KMIR1013E03
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Photodiode Array 32 element
Abstract: No abstract text available
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
SE-171
KMIR1013E01
Photodiode Array 32 element
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an
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G9211
G9214
G9205
G9208
G9214/G9205
KMIR1011E08
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
SE-171
KMIR1013E02
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an
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G9211
G9214
G9205
G9208
G9214/G9205
KMIR1011E08
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register
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G9201
G9204
B1201,
KMIR1012E08
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