InGaas PIN photodiode, 1550 NEP
Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Text: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High
|
Original
|
850nm
1700nm.
InGaAs-1000-4)
InGaAs-3000-4)
1550nm
InGaas PIN photodiode, 1550 NEP
quad photodiode psd
quadrant photodiode
InGaas PIN photodiode, 1550 sensitivity
photodiode 850nm nep
UDT Sensors
Photodiode, 1550nm NEP
InGaas PIN photodiode chip
quad photodiode
PIN photodiode 850nm
|
PDF
|
Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
|
Original
|
KIRD0005E02
Selection guide
|
PDF
|
InGaAs quadrant
Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom
|
Original
|
C30845EH
YAG-444-4AH
DTC-140H
InGaAs quadrant
C30822E
UV245BG
UV-215BQ
C30971
C30641EH-TC
FFD-100
YAG-100A
|
PDF
|
EPITAXX
Abstract: ETX505Q epitaxx quadrant InGaAs Epitaxx ETX 40 EPITAXX 40
Text: EPITAXX INC 54E D m 33b0M0b 0D00GÔ3 4 Ï EPITAXX ETX1Q5D, ETX505Q T '-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
|
OCR Scan
|
33b0M0b
0D00QÃ
ETX505Q
EPITAXX
ETX505Q
epitaxx quadrant
InGaAs Epitaxx
ETX 40
EPITAXX 40
|
PDF
|
epitaxx
Abstract: No abstract text available
Text: E P 1 T A X X INC 24E D • 33b040b □□□□□63 4 ■ lEPnMo^^^^^^ETjnosaETgow T-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
|
OCR Scan
|
33b040b
Opt15
ETX505Q
33b04Dti
ETX505Q
epitaxx
|
PDF
|
InGaAs quadrant
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G6849 series Quadrant type Features Applications Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Light spot position detection Measurement equipment Low noise High reliability Structure Parameter
|
Original
|
G6849
G6849
G6849-01:
G6849-01
KIRD1042E04
InGaAs quadrant
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
|
Original
|
G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E02
|
PDF
|
G6849-01
Abstract: quadrant photodiode G6849 AK 1012
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
|
Original
|
G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E02
G6849-01
quadrant photodiode
AK 1012
|
PDF
|
quadrant photodiode
Abstract: G6849 G6849-01
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
|
Original
|
G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E01
quadrant photodiode
G6849-01
|
PDF
|
G6849
Abstract: G6849-01 quadrant photodiode
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
|
Original
|
G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E03
G6849-01
quadrant photodiode
|
PDF
|
AW100
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
|
Original
|
G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E03
AW100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H A M A M A T S U PRELIMINARY DATA Oct. 1997 InGaAs PIN PHOTODIODE G6849 Quadrant type FEATURES • Active area: <j>2 m m /4 elements • Low noise • High reliability APPLICATIONS • Position detection of spot light • Measurement equipment •GENERAL RATINGS
|
OCR Scan
|
G6849
KIRD1017E01
|
PDF
|
ingaas LED
Abstract: EPITAXX ETX1000T InGaAs quadrant large area quadrant photodiode satellite l300 T05 Package ETX25B InGaAs Epitaxx ETX505Q
Text: EPITAXX INC 5QE D • 33b04Qb OGQOlBb T H E P X 7^//^// Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
|
OCR Scan
|
33b040b
EDL1300RFC
ETX75CER
ETX100T
ETX100TL
ETX300T
ETX300CER
EDL1300CD
ETX1300T
ETX1550T
ingaas LED
EPITAXX
ETX1000T
InGaAs quadrant
large area quadrant photodiode
satellite l300
T05 Package
ETX25B
InGaAs Epitaxx
ETX505Q
|
PDF
|
EPITAXX
Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Text: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
|
OCR Scan
|
33bG40b
EDL1300RFC
R1300
ETX75FJ-SLR
ETX75FC
-45dB
-55dB
EPITAXX
ETX505Q
large area quadrant photodiode
ETX100TL-ST
ingaas LED
epitaxx quadrant
ETX1000T
InGaAs Epitaxx linear
T05 Package
ETX300
|
PDF
|
|
|
epitaxx
Abstract: InGaAs Epitaxx linear ETX1300RST ETX1300FC
Text: EP I T A X X INC 50E D • 33b040b DGGGIBb T H E P X 7=VAy/ Telecommunications: The Local Loop E P IT A X X has been a p io n eer in developing packaging w hich supports high volum e production while reducing com ponent costs. E P IT A X X receptacled photodiodes, laser diodes, a n d L E D s offer high reliability,
|
OCR Scan
|
33b040b
Nu00T
ETX300CER
EDL1300CD
ETX1300T
ETX1550T
epitaxx
InGaAs Epitaxx linear
ETX1300RST
ETX1300FC
|
PDF
|
Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
|
Original
|
KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
|
PDF
|
FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
|
Original
|
CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
|
PDF
|
Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
|
Original
|
KACC0001E02
Selection guide
United Detector Technology PSD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R R series Thermal Emission Microscope IAHEAI New High-sensitivity detector thermal detector InSb Motorized turret with objective lenses • Two objective lenses for analyzing thermal emissions • Three objective lenses for probing and laser scanning Thermal Emission Microscope
|
Original
|
B1201
SSMS0012E15
JUN/2015
|
PDF
|
PIN-10D
Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
|
Original
|
OS-P200
OSD100-0A
OSD100-5TA
PIN-10D
PIN-5DI
PIN-13DI
PIN-10DF
PIN-10DI
PIN10DI
OSD100-0A
InGaAs APD quadrant
OSD5-5T
PIN-44DI
|
PDF
|
PIN-125DPL
Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Text: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral
|
Original
|
OS-P200
OSD100-0A
OSD100-5TA
PIN-125DPL
PIN-10DP
InGaAs APD quadrant
OSD1-5T
pin-6dp
PIN-10AP
PIN-10DPI
PIN-13DPI
PIN-220DP
PIN-25D
|
PDF
|
laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
|
Original
|
|
PDF
|
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
|
Original
|
10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
|
PDF
|
MPPC 001 ci
Abstract: china nobel tv diagram
Text: NEWS 02 2013 100 90 70 Relative light ou tput % 80 60 50 40 30 20 10 300 400 600 500 h (nm) gt en el av W Cover Story PAGE 2 Hamamatsu Photonics K.K. celebrates 60 years of excellence in Photonics OPTO-SEMICONDUCTOR PRODUCTS PAGE 15 New type of Multi-Pixel Photon
|
Original
|
|
PDF
|