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    INGAAS PIN PHOTODIODE, 1550 NEC Search Results

    INGAAS PIN PHOTODIODE, 1550 NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    INGAAS PIN PHOTODIODE, 1550 NEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NR8360JP-BC

    Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
    Text: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated


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    PDF NR8360JP-BC 14-PIN NR8360JP-BC datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550

    Siemens photodiode

    Abstract: PIN photodiode crosstalk laser diode 1550 nm 1480 nm diode laser
    Text: SBH92314x FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH92314x Emitting-/1300 Siemens photodiode PIN photodiode crosstalk laser diode 1550 nm 1480 nm diode laser

    InGaAs 1550 photodiode transimpedance amplifier P

    Abstract: diode symbol InGaAs 1550 photodiode transimpedance amplifier
    Text: SBH92344x FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode with Burst Mode Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH92344x Emitting-/1300 InGaAs 1550 photodiode transimpedance amplifier P diode symbol InGaAs 1550 photodiode transimpedance amplifier

    Siemens Semiconductors

    Abstract: Laser Diode 1550 nm dBm laser diode Spectral Width 1 nm, 1550 nm, power 2
    Text: SBH52444x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 155 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH52444x Emitting-/1550 Siemens Semiconductors Laser Diode 1550 nm dBm laser diode Spectral Width 1 nm, 1550 nm, power 2

    Siemens Semiconductors

    Abstract: InGaAs 1550 photodiode transimpedance amplifier InGaAs 1550 photodiode transimpedance amplifier P Siemens photodiode
    Text: SBH52454x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH52454x Emitting-/1550 Siemens Semiconductors InGaAs 1550 photodiode transimpedance amplifier InGaAs 1550 photodiode transimpedance amplifier P Siemens photodiode

    laser diode 1550 nm

    Abstract: Siemens photodiode InGaAs Photodiode 1550nm fp diode pigtail nm
    Text: SBH52414x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH52414x Emitting-/1550 laser diode 1550 nm Siemens photodiode InGaAs Photodiode 1550nm fp diode pigtail nm

    circuit receiver module

    Abstract: PIN-TIA PREAMPLIFIER TRANSIMPEDANCE optic fet SRP00245X SRP00x4xx SIEMENS RF MODULE
    Text: Receiver Module with Preamplifier Description The SRP00x4xx are optical receiver modules which use a high-speed PIN photodetector coupled with a hybrid low noise transimpedance amplifier TIA for 1300 nm or 1550 nm optical communications. The PIN-Photodiode is made of InGaAs/InP and has an active


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    PDF SRP00x4xx circuit receiver module PIN-TIA PREAMPLIFIER TRANSIMPEDANCE optic fet SRP00245X SIEMENS RF MODULE

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    InGaas PIN photodiode, 1550 nec

    Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
    Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is


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    PDF NR8360JP-BC NR8360JP-BC 14-PIN InGaas PIN photodiode, 1550 nec APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application

    MXA-512-1

    Abstract: MXA-512-2 photodiode 256 elements silicon photodiode 512 elements
    Text: Imaging Telecom Multiplexed InGaAs Photodiode Array MXA-512 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-512-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 nm. The


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    PDF MXA-512 MXA-512-X MXA-512-1 MXA-512-2 photodiode 256 elements silicon photodiode 512 elements

    Untitled

    Abstract: No abstract text available
    Text: PD ld PW Series WDM Bidirectional Transmitter & Receiver Modules Inc. Applications • • • • • • Passive Optical Networks FSAN Full Duplex Communications WDM Bi-Directional transmission over a single fiber CATV Digital or Analog Operation Features


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    PDF 1310nm 1550nm

    InGaas PIN photodiode, 1550 NEP

    Abstract: No abstract text available
    Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ZL60015


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    PDF ZL60015 ZL60015TBD, ZL60015TDDB, ZL60015TEDB, ZL60015TFDB, ZL60015TGDB, ZL60015TJDB ZL60015PADB, ZL60015PDDB, InGaas PIN photodiode, 1550 NEP

    InGaas PIN photodiode, 1550 NEP

    Abstract: Photodiode receiver specification for 1550 nm ISO 2768-mk ZL60015 ZL60015TBD ZL60015TDDB ZL60015TEDB photodiode 1550 NEP InGaAs 1550 photodiode transimpedance amplifier "ISO 2768-mK"
    Text: ZL60015 Optical Receiver. 1310/1550 nm, 2.5 Gbps PIN + Pre-amp with Photocurrent Monitor Data Sheet January 2005 Ordering Information ZL60015TBD, TO-46 with lens The ZL60015 is also available assembled in standard optical receptacles, or with a 1m 9µm fiber


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    PDF ZL60015 ZL60015TBD, ZL60015 ZL60015TDDB, ZL60015TEDB, ZL60015TFDB, ZL60015TGDB, ZL60015TJDB ZL60015PADB, ZL60015PDDB, InGaas PIN photodiode, 1550 NEP Photodiode receiver specification for 1550 nm ISO 2768-mk ZL60015TBD ZL60015TDDB ZL60015TEDB photodiode 1550 NEP InGaAs 1550 photodiode transimpedance amplifier "ISO 2768-mK"

    Untitled

    Abstract: No abstract text available
    Text: PD ld Inc. PB Series 1310T/1310R and 1550T/1550R Bidirectional Modules Applications • • • • • • Passive Optical Networks FTTH/FTTC Full Duplex Communications Single Wavelength Bidirectional CATV Digital or Analog Operation Features • • •


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    PDF 1310T/1310R 1550T/1550R -24dB 1310nm 1550nm pb1310t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SBH52414X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH52414X Emitting-/1550

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS SBH92344X FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/lnP-PIN Photodiode with Burst Mode Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH92344X Emitting-/1300

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS SBH52444X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode with 155 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH52444X Emitting-/1550

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SBH92314X FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/lnP-PIN Photodiode • • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH92314X Emitting-/1300

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS SBH52454X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks


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    PDF SBH52454X Emitting-/1550 subcompone123

    EPITAXX

    Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
    Text: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


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    PDF 2000T5, 3000T5 500nm, 1000p 33b0MDb EPITAXX EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550

    ETX2000T5

    Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
    Text: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


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    PDF 1000T 2000T5, 3000T5 33bOMDb 0DD0375 ETX2000T5 ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx

    N7085

    Abstract: IC for IR receiver pin photodiode 2 GHz 1550
    Text: DATA SHEET NEC RECEIVER MODULE NDL5422P ELECTRON DEVICE 05O^m InGaAs PIN PHOTO DIODE FOR 2 .5 Gb/s BUTTERFLY MODULE W ITH MULTIMODE FIBER INTERNAL PRE-AMPLIFIER DESCRIPTION N DL5422P is an InGaAs PIN photodiode 6 pin b u tte rfly package module incorporating silicon pre-am plifier 1C. I t is especially


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    PDF NDL5422P DL5422P NDL5422PC. L5405R L5407P L5408P L5408P1 NDL5406 N7085 IC for IR receiver pin photodiode 2 GHz 1550

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODE INC 15E D | 5305=105 0 0 0 0 4 5 3 0 | T - ‘f i -O S ’ SCW-1500 SERIES LASER DIODE, INC. 1550nm Single Mode Pigtailed Lasers FEATURES t> InGaAsP Buried Crescent Low Threshold Current P Hermetically Sealed Package Extended Operating Temperature Range


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    PDF SCW-1500 1550nm

    OPTi Technologies

    Abstract: No abstract text available
    Text: B T & D TECHNOLOGIES SSE D • llflSDfl3 G00G353 7Ô7 ■ BTDT BT&D T PDC2201-1.2/2.4 E C H N O L O G I E S GaAs IC PINFET RECEIVER Applications: Features: • Ultra high reliability planar InGaAs PIN photodiode • Custom GaAs IC for high performance and stability


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    PDF G00G353 PDC2201-1 PDC2201 DS027_ OPTi Technologies