InGaas PIN photodiode chip
Abstract: No abstract text available
Text: Pin Photodiode KeyFeatures InGaAs Material Planar Zn Diffused Structure 70 Micron in Diameter Active Area Front-illuminated Photodiode High Responsivity 0.85 A/W on a Wide Range (1300nm to 1600nm Low Dark Current Applications 2.5 Gb/s Receiver Modules Telecom
|
Original
|
PDF
|
1300nm
1600nm)
1600nm
InGaas PIN photodiode chip
|
NR3510UR
Abstract: STM-16
Text: PRELIMINARY DATA SHEET NEC's Ø50 m InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER NR3510UR FOR 2.5 GB/s APPLICATIONS FEATURES • INTERNAL PRE-AMPLIFIER • HIGH SENSITIVITY S = 0.80 A/W MIN. @ λ = 1.31 μm S = 0.85 A/W MIN. @ λ = 1.55 μm • LOW OPERATING VOLTAGE
|
Original
|
PDF
|
NR3510UR
NR3510UR
STM-16
|
InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-205-1
Text: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
|
Original
|
PDF
|
KIP-205-1
KIP-205-1
250x250
InGaas PIN photodiode chip
for photodiode chips
|
InGaAs PIN photodiode Wavelength .6 to 1.7
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
|
Original
|
PDF
|
G10899
SE-171
KIRD1109E01
InGaAs PIN photodiode Wavelength .6 to 1.7
|
Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
|
Original
|
PDF
|
G10899
SE-171
KIRD1109E01
|
InGaas PIN photodiode chip
Abstract: datasheets for photodiode chips
Text: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current
|
Original
|
PDF
|
KIP-M25-1
KIP-M25-1
InGaas PIN photodiode chip
datasheets for photodiode chips
|
Untitled
Abstract: No abstract text available
Text: Optical Monitoring Photodiode mini ceramic pkg KMIP3-C325NS Description KMIP3-C325NS is InGaAs PIN Photodiode with □250 um active area in Φ2.96mm ceramic pkage. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD
|
Original
|
PDF
|
KMIP3-C325NS
KMIP3-C325NS
250um
|
Untitled
Abstract: No abstract text available
Text: Optical Monitoring Photodiode mini ceramic pkg KMIP3-C425NS Description KMIP3-C425NC is InGaAs PIN Photodiode with □ 250 um active area in Φ3.0mm ceramic pkage. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD
|
Original
|
PDF
|
KMIP3-C425NS
KMIP3-C425NC
250um
|
Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 m to 1.7 m. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 m to 1.7 m, the G10899 series has sensitivity extending
|
Original
|
PDF
|
G10899
G10899-003K
G10899-005K
G1089:
SE-171
KIRD1109E02
|
Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
|
Original
|
PDF
|
G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E02
|
G10899-003K
Abstract: G10899 InGaAs PIN photodiode Wavelength .6 to 1.7
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
|
Original
|
PDF
|
G10899
G10899-003K
G10899-005K
G10899:
SE-171
KIRD1109E02
G10899-003K
InGaAs PIN photodiode Wavelength .6 to 1.7
|
Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
|
Original
|
PDF
|
G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E01
|
Untitled
Abstract: No abstract text available
Text: InGaAs PINフォトダイオードアレイ G12430シリーズ 近赤外域用16/32/46素子InGaAsアレイ DIP型セラミックパッケージの1次元InGaAs PINフォトダイオードアレイです。簡易的な分光分析が行えます。 特長
|
Original
|
PDF
|
G12430ã
G12430-016ï
G12430-032D
G12430-046D
KMPDC0001JA
KIRD1124J02
|
G10899
Abstract: G10899-01K G10899-005K G10899-003K G10899-03K 003k 005-K G108990
Text: InGaAs PINフォトダイオード G10899シリーズ 広い感度波長範囲 0.5～1.7 µm G10899シリーズは0.5 µmから1.7 µmの広い感度波長範囲を実現したInGaAs PINフォトダイオードです。標準のInGaAs PINフォトダイオードの感度波長範囲が0.9～1.7 mであるのに対して、G10899シリーズは0.5～1.7 μmと短波長側の感度
|
Original
|
PDF
|
G10899
G108990
mG108990
1G10899
G10899-003K
G10899-005K
G10899-01K
G10899-02K
G10899-03K
G10899
G10899-01K
G10899-005K
G10899-003K
G10899-03K
003k
005-K
|
|
|
InGaAs pin
Abstract: No abstract text available
Text: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength
|
Original
|
PDF
|
K11908-010K
K11908-010K
KIRD1116E01
InGaAs pin
|
InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: InGaAs PINフォトダイオード G8941シリーズ サブマウント型モニタ用フォトダイオード 特長 用途 受光面サイズ G8941-01: ϕ1 mm G8941-02: ϕ0.5 mm G8941-03: ϕ0.3 mm 小型パッケージ: 2 x 2 × 1 mm LDモニタ 高いチップ位置精度: ±0.075 mm
|
Original
|
PDF
|
G8941ã
G8941-01:
G8941-02:
G8941-03:
G8941-01
G8941-02
G8941-03
|
C30617BH
Abstract: No abstract text available
Text: Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for easy
|
Original
|
PDF
|
DTS0308
C30617BH
|
28-CPC6
Abstract: No abstract text available
Text: InGaAs PIN Photodiode Modules for Telecom Applications 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com • InGaAs PIN Photodiode • Low Dark Current • High Responsivity • Low PDL • Miniature Package
|
Original
|
PDF
|
GR-468-CORE.
Responsivity245/900
28-CPC6
|
InGaAs Photodiode 1550nm
Abstract: PIN photodiode responsivity 1550nm 1.1
Text: 1mm Diameter InGaAsInGaAs PhotoDiodes 1 mm Diameter PhotoDiodes PD-LD Inc. offers a variety of standard and custom large active area InGaAs PIN Photodiodes in fiber coupled packages, of proven manufacture and design. InGaAs is optimal from 1000 to 1650nm . All devices are
|
Original
|
PDF
|
1650nm
InGaAs Photodiode 1550nm
PIN photodiode responsivity 1550nm 1.1
|
Untitled
Abstract: No abstract text available
Text: 複合素子 K11908-010K 波長域の異なる2つのInGaAs PINフォトダイオードを 上下に配置し広い感度波長範囲を実現 K11908-010Kは、カットオフ波長 1.7 m・2.55 μmの2つのInGaAs PINフォトダイオードを同一光軸上に配置した複合素
|
Original
|
PDF
|
K11908-010K
K11908-010Kã
KIRDA0218JA
KIRD1116J02
|
Optoway Technology
Abstract: PIN Photodiode 1550nm PD-1350 InGaAs Photodiode 1550nm 1550nm photodiode 2 Ghz photodiode responsivity 1550nm 2
Text: Optoway PD-1350 * Mini-Size InGaAs PIN PD MODULE PD-1350 InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL
|
Original
|
PDF
|
PD-1350
PD-1350
Optoway Technology
PIN Photodiode 1550nm
InGaAs Photodiode 1550nm
1550nm photodiode 2 Ghz
photodiode responsivity 1550nm 2
|
InGaAs apd photodiode
Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication
|
OCR Scan
|
PDF
|
FU-319SPA-C6
FU-319SPP-C6
-33dBm
OC-48,
STM-16)
bS4102T
InGaAs apd photodiode
photodiode preamplifier AGC
55nm
photodiode Avalanche photodiode
FU-319SPA-C6
FU-319SPP-C6
STM-16
mitsubishi fu 1.31 ber
|
Untitled
Abstract: No abstract text available
Text: HR1104TG/CX/MH InGaAs PIN PD Description The HR1104TG/CX/MH are InGaAs PIN photodiodes which respond to a 1.0 to 1.65 |um band. They are suitable as optical detectors for high capacity optical fiber communication systems. Features • Fast pulse response: tp tf = 1.0 ns typ.
|
OCR Scan
|
PDF
|
HR1104TG/CX/MH
HR1104TG/CX/MH
HR1104CX
4MTb205
0D144S7
GG144SÛ
|
