FILM CAP
Abstract: infrared sources To5 transistor header 600C IR40 ir source infrared infrared source
Text: IR-40 Series 4 Watt Infrared Source Unit 875K ELECTRICALLY MODULATED INFRARED SOURCE UNIT This infrared gray body is an emitter for use in infrared instrumentation for process control, environmental monitoring or laboratory experimentation. It is designed to operate at 600C
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IR-40
FILM CAP
infrared sources
To5 transistor header
600C
IR40
ir source
infrared
infrared source
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GaAs 850 nm Infrared Emitting Diode
Abstract: TLN217
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
GaAs 850 nm Infrared Emitting Diode
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TLN217
Abstract: No abstract text available
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
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Untitled
Abstract: No abstract text available
Text: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA
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TLN1108
18mW/sr
100mA
100mA
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TLN217
Abstract: No abstract text available
Text: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189M
100mA
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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gold detectors circuit
Abstract: L6409-G MR16 dimensions MR11 L514-G L515-G L517A-G L519-G L521-G L523-G
Text: High Intensity Infrared Source Several lamps in our MR11 and MR 16 series are now available with gold coated reflectors. This layer of gold provides for increased emission in the infrared. Applications include open field IR gas detection, local infrared heating and
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L517A-G
L519-G
L514-G
L515-G
L521-G
L523-G
L6408-G
L6409-G
gold detectors circuit
L6409-G
MR16 dimensions
MR11
L514-G
L515-G
L517A-G
L519-G
L521-G
L523-G
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TLN212
Abstract: No abstract text available
Text: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. •
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TLN212
136sr
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TLN210
Abstract: No abstract text available
Text: TLN210 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN210(F) Lead Free Product Infrared Light-emission Diode For Still Camera Light Source For Auto Focus Unit: mm • Optical radiation of current confining LED chip is condensed by a resin lens. • High output
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TLN210
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HE8811
Abstract: No abstract text available
Text: HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
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HE8811
HE8811
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TLN231
Abstract: "infrared led" 800 nm 980 nm
Text: TLN231 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231 Infrared LED for Space-Optical-Transmission Unit: mm • High radiant intensity: 60 mW/sr typ. at IF = 50 mA • Half-angle value: θ • A light source for remote control • Wireless AV-signal transmission purpose
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TLN231
TLN231
"infrared led" 800 nm 980 nm
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"infrared led" 800 nm 980 nm
Abstract: TLN233
Text: TLN233 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233(F) Infrared LED for Space-Optical-Transmission Unit: mm • High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±13° (typ.) • A light source for remote control
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TLN233
"infrared led" 800 nm 980 nm
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TLN233
Abstract: infrared medical
Text: TLN233 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233 Infrared LED for Space-Optical-Transmission Unit: mm • High radiant intensity: 80 mW/sr typ. at IF = 50 mA • Half-angle value: θ1/2 = ±13° (typ.) • A light source for remote control •
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TLN233
TLN233
infrared medical
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TLN233
Abstract: No abstract text available
Text: TLN233 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233(F) Lead(Pb)-Free Infrared LED for Space-Optical-Transmission • High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±13° (typ.) • A light source for remote control
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TLN233
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TLN231
Abstract: No abstract text available
Text: TLN231 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231(F) Lead Free Product Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control
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TLN231
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Untitled
Abstract: No abstract text available
Text: TLN231 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231(F) Lead Free Product Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control
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TLN231
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TLN231
Abstract: No abstract text available
Text: TLN231 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231 Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr typ. at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control • Wireless AV-signal transmission purpose
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TLN231
TLN231
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TLN212
Abstract: No abstract text available
Text: TO SH IBA TLN212 TOSHIBA INFRARED LED GaAÍAs INFRARED EMITTER TLN212 INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA Unit : mm LIGHT SOURCE FOR AUTO FOCUS 4.5 + 0.3 4.5 ± 0.3 r -• • High output • Effective emission diameter of 388 X 296 /¿m
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TLN212
TLN212
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Untitled
Abstract: No abstract text available
Text: OPTEK Infrared Emitting Diodes Optek remains unchallenged as the industry's most complete high quality source for infrared emitters. The latest state-of-the-art solution grown epitaxial techniques are used to produce the high quality GaAs and GaAIAs diode material required to make Optek infrared emitting
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OSI photo detector
Abstract: 1N6266
Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940
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1N6266
1N6266
L14G1.
OSI photo detector
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