Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KP-3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. ROHS COMPLIANT. Package Dimensions
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KP-3216P3C
KP-3216
2000PCS
DSAA4436
NOV/08/2004
100uA
100mW
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EPH-3233
Abstract: high sensitivity phototransistor Infrared-Sensor phototransistor infrared
Text: ELEKON Phototransistor EPH-3233 High sensitivity High Sensitive NPN silicon phototransistor mounted in a TO-18 type header with clear epoxy encapsulation. Applications: Optical Switches, Infrared Sensors, Camera Stroboscpes Specifications & Ratings: Parameter @ 25ºC
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EPH-3233
200Lux
EPH-3233
high sensitivity phototransistor
Infrared-Sensor
phototransistor infrared
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KP-3216P3BT
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KP-3216P3BT Features lMECHANICALLY AND SPECTRALLY MATCHED TO THE KP-3216 SERIES INFRARED EMITTING LED LAMP. lBLUE Description P3 Made with NPN silicon phototransistor chips. TRANSPARENT LENS. lPACKAGE : 2000PCS / REEL. Package Dimensions Notes:
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KP-3216P3BT
KP-3216
2000PCS
DSAC5663
APR/13/2003
100mW
KP-3216P3BT
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR AP3216P3C WATER CLEAR LENS Features Description !MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. !PACKAGE: 2000PCS/REEL. Package Dimensions
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AP3216P3C
KP-3216
2000PCS/REEL.
CDA0517
NOV/1/2001
100uA
20mW/cm2
940nm
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KP-3216P3BT
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KP-3216P3BT BLUE TANSPARNET LENS Features Description !MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. !BLUE TANSPARNET LENS. !PACKAGE :2000PCS/REEL. Package Dimensions
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KP-3216P3BT
KP-3216
2000PCS/REEL.
KDA0733
NOV/10/2001
100uA
20mW/cm2
940nm
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KDA0534
Abstract: KP-3216 KP-3216P3C
Text: PHOTOTRANSISTOR KP-3216P3C WATER CLEAR LENS Features Description !MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. !PACKAGE :2000PCS/REEL. Package Dimensions
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KP-3216P3C
KP-3216
2000PCS/REEL.
KDA0534
SEP/17/2001
940nm
KDA0534
KP-3216P3C
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L-32P3C
Abstract: PHOTOTRANSISTOR L KDA0530 l32p3c
Text: PHOTOTRANSISTOR L-32P3C Features !MECHANICALLY Description AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE L34 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
KDA0530
SEP/17/2001
100uA
20mW/cm2
940nm
L-32P3C
PHOTOTRANSISTOR L
KDA0530
l32p3c
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KP-3216P3C
Abstract: No abstract text available
Text: PHOTOTRANSISTOR P/N: KP-3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions
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KP-3216P3C
KP-3216
2000PCS
DSAA4436
NOV/14/2005
100mW
KP-3216P3C
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KP-3216P3C
Abstract: KP-3216
Text: PHOTOTRANSISTOR Part Number: KP-3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. MOISTURE SENSITIVITY LEVEL : LEVEL 3.
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KP-3216P3C
KP-3216
2000PCS
DSAA4436
MAR/16/2007
100mW
KP-3216P3C
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L-32P3C
Abstract: 32p3c
Text: PHOTOTRANSISTOR L-32P3C Description Features !MECHANICALLY AND SPECTRALLY MATCHED TO P3 Made with NPN silicon phototransistor chips. THE L-34 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
DSAA4192
MAR/06/2003
940nm
100mW
L-32P3C
32p3c
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR L-32P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. L-34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
AA4192
DEC/23/2004
100uA
20mW/cm2
940nm
100mW
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Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE L-34SF7C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE L-32P3C PHOTOTRANSISTOR. SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes:
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L-34SF7C
L-32P3C
DSAA4334
MAR/20/2005
L-34SF7C
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KP-3216P3C
Abstract: No abstract text available
Text: 3.2x1.6mm PHOTOTRANSISTOR Part Number: KP-3216P3C Description Features z 3.2mmx1.6mm SMT LED, 1.1mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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KP-3216P3C
2000pcs
DSAA4436
SEP/25/2012
KP-3216P3C
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KP-3216P3C Description Features P3 Made with NPN silicon phototransistor chips. !MECHANICALLY AND SPECTRALLY MATCHED TO THE KP-3216 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. !PACKAGE : 2000PCS / REEL. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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KP-3216P3C
KP-3216
2000PCS
DSAA4436
FEB/24/2003
100mW
KP-3216P3C
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l32p3c
Abstract: No abstract text available
Text: PHOTOTRANSISTOR P/N: L-32P3C Description Features MECHANICALLY AND SPECTRALLY MATCHED TOTHE Made with NPN silicon phototransistor chips. L-34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
AA4192
NOV/02/2005
100uA
20mW/cm2
940nm
100mW
l32p3c
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H11AA4M
Abstract: H11AA2M H11AA1M H11AA1SM H11AA1SR2M H11AA1TM H11AA1VM H11AA3M H11AA1T H11AA1MS
Text: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
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H11AA1M,
H11AA2M,
H11AA3M,
H11AA4M
H11AAXM
E90700,
H11AA4M
H11AA2M
H11AA1M
H11AA1SM
H11AA1SR2M
H11AA1TM
H11AA1VM
H11AA3M
H11AA1T
H11AA1MS
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H11AA4M
Abstract: all datasheet phototransistor H11AA1 equivalent H11AA2M circuit infrared phototransistor for tv H11AA1SR2VM H11AA1M H11AA1SM H11AA1SR2M H11AA1TM
Text: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
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H11AA1M,
H11AA2M,
H11AA3M,
H11AA4M
H11AAXM
E90700,
H11AA4M
all datasheet phototransistor
H11AA1 equivalent
H11AA2M
circuit infrared phototransistor for tv
H11AA1SR2VM
H11AA1M
H11AA1SM
H11AA1SR2M
H11AA1TM
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C1243
Abstract: C2090
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86
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MCT276
MCT276
E5015CAL
C1686
C1679
C1680
C1243
C1243
C2090
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Untitled
Abstract: No abstract text available
Text: O p toisolator S pecification s 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he 4N 35,4N 36,4N 37 are gallium arsenide infrared em itting diodes coupled with a silicon phototransistor in a dual in-line package.
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c1251
Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
Text: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu factured from specially grown gallium arsenide is selec
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MCT276
E50151
MCT276
Cto150Â
c1251
C1336
C1240 diode
C1109
C1240
C1321
C1322
C1324
S555
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Untitled
Abstract: No abstract text available
Text: Sidelooker Phototransistor TECHNOLOGIES QSE112/113/114 DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES * Tight production distribution with 3:1
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QSE112/113/114
QSE11X
EE113
QEE123
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4N35 QUALITY TECHNOLOGIES
Abstract: 4n35 equivalent C1684 r .85 transistor
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86
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E50151
TYP20
C1685
C1296A
C1294
4N35 QUALITY TECHNOLOGIES
4n35 equivalent
C1684 r .85 transistor
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NPN C1685
Abstract: C1685 transistor
Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
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E90700
NPN C1685
C1685 transistor
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4n35 equivalent
Abstract: 4N35 CONTROL CIRCUIT 104N35 4N36
Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTHOHICS 4N35 4N36 4N37 PACKAGE DIMENSIONS Æ & DESCRIPTION & The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. FEATURES & APPLICATIONS
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E90700
C1296A
4n35 equivalent
4N35 CONTROL CIRCUIT
104N35
4N36
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