Untitled
Abstract: No abstract text available
Text: KP3020 Series 8PIN PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic Description 8 7 6 5 1 2 3 4 The KP3020 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in an 8-pin DIP package and available in wide-lead spacing
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KP3020
5000Vrms
UL1577
69P12001
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Infrared Phototransistor 302
Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Text: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.
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LTE-302-M/LTE-309
LTR-5576D/
LTR-5986DH
LTE-302
LTE-302-M
LTE-302-M/LTE-309
LTE-309
Infrared Phototransistor 302
LTR-5576D
302 phototransistor datasheet
LTE-302-M
LTE-309
phototransistor 302
302 phototransistor
if lte
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HOA1876
Abstract: SD1410 SD1440 SE1450 phototransistor 302
Text: HOA1876 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing • Wide operating temperature range - 55¡C to +100¡C • 0.200 in.(5.08 mm) slot width INFRA-30.TIF DESCRIPTION The HOA1876 series consists of an infrared emitting
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HOA1876
INFRA-30
HOA1876
HOA1876-
SE1450,
SD1440,
SD1410.
SD1410
SD1440
SE1450
phototransistor 302
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honeywell smd2440-001 ceramic phototransistor
Abstract: honeywell smd2440-011 ceramic phototransistor sme2470-021 SMD2440-001 KIA 431B datasheet SMD2420 SMD2440-021 SME2470-001 SMD2440-011 SMD2420-021
Text: Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors FEATURES • Small package size • Glass lensed optics for efficient optical coupling • Upright or inverted mounting capability • Low profile, small size for flexible layout of multiple
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006445-2-EN
honeywell smd2440-001 ceramic phototransistor
honeywell smd2440-011 ceramic phototransistor
sme2470-021
SMD2440-001
KIA 431B datasheet
SMD2420
SMD2440-021
SME2470-001
SMD2440-011
SMD2420-021
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SME2470-021
Abstract: SMD2420 SMD2440-001 SME2470-001 SMD2420-001 SMD2440-011 lens photodiode phototransistor micro wave oven
Text: Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors FEATURES • Small package size • Glass lensed optics for efficient optical coupling • Upright or inverted mounting capability • Low profile, small size for flexible layout of multiple
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006445-2-EN
SME2470-021
SMD2420
SMD2440-001
SME2470-001
SMD2420-001
SMD2440-011
lens photodiode phototransistor
micro wave oven
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grayhill 654321
Abstract: encoder 654321 654321 grayhill 62AXX-XX-XXXC 62B22 GRAYHILl 87654321 nyogel 774L
Text: Optical Encoders SERIES 61A Custom, Absolute FEATURES • Absolute Position Sensing • 3, 4, or 5-Bit Custom Output Coding • 8 to 32 Positions • Fixed Stops Only • Angles of Throw to 45° Design Specifications Will Dictate the Angle of Throw DIMENSIONS
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60525-5997n-lbs.
61MXX-XX-XX
grayhill 654321
encoder 654321
654321 grayhill
62AXX-XX-XXXC
62B22
GRAYHILl 87654321
nyogel 774L
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robot circuit diagram free download
Abstract: No abstract text available
Text: Robotics with the Boe-Bot Student Guide VERSION 3.0 WARRANTY Parallax warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax will, at its option, repair or replace the merchandise, or refund the
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IR phototransistor
Abstract: AD672 INHX8M 009f 30D7 college Z 00103 PIC12C671 PIC12C672 0000004F
Text: Infra Red Infra Red Monitor Author: Mark Lemay Quebec, Canada email: MLemay@CollegeShawinigan.qc.ca Block Diagram: PIC12C671 APPLICATION OPERATION The application of my IR monitor is to check an IR emitting device such as a TV Video remote controller. This IR monitor requires only 7 resistors, 4 LEDs, 1
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PIC12C671
PIC12C671
0000001E
0000008F
DS40160A/8
002-page
IR phototransistor
AD672
INHX8M
009f
30D7
college
Z 00103
PIC12C672
0000004F
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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4n25
Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
Text: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium
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F14481
2500Vdc
4n25
4n35
597-289
4n25 an
DIODE 0536
W4N35
4n32
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be 303
Abstract: No abstract text available
Text: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.
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SL5511
SL5511
C96-551
be 303
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c217
Abstract: MOC215
Text: Tem ic MOC215-217 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists o f a phototransistor optically coupled to a gallium arsenide infrared emitting diode in
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MOC215-217
MOC215
MOC216
MOC217
96M7M)
14-Jun-96
14-Jun-%
c217
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MOC211
Abstract: OC211 OC212M
Text: Temic MOC211-213 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The M O C series consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in
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MOC211-213
MOC211
eth10.
14-Jun-96
OC211
OC212M
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H0A1876
Abstract: No abstract text available
Text: HOA1876 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing . Wide operating temperature range -55°C to +100°C . 0.200 in.(5.08 mm) slot width DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The HOA1876 series consists of an infrared emitting
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HOA1876
HOA1876
HOA1876-001,
HOA1876-003)
SE1450,
SD1440,
SD1410.
H0A1876
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PHOTOTRANSISTOR 3 LEGS
Abstract: No abstract text available
Text: 3875 08 1 0 1 E 19776 G E SOLID STATE Optoelectronic Specifications - HARRIS SEMICOND SECTOR 37E D S 4302271 0G2723Ô fl • HAS Photon Coupled Isolator SL5511 The GE Solid State SL551I consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE
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0G2723Ã
SL5511
SL551I
SL5511
C96-551
92CS-42662
92CS-428S1
PHOTOTRANSISTOR 3 LEGS
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, in fra re d em itting diode co u p led with a silicon p h o to tra n sisto r in a d u al in-line package. T h e
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SL5511
SL5511
C96-551
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FR 309 diode
Abstract: Infrared Phototransistor 302 2D05 LTR-5888
Text: • w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 FEATURE •S e le c te d to specific o n -lin e intensity and rad iant intensity ranges. •Low cost plastic side looking package. •Mechanically and spectrally matched to the CTR-5576D/LTR5888DH series of phototransistor.
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LTE-302-M/LTE-309
CTR-5576D/LTR5888DH
LTE-309
LTE-302-M/LTE-309
LTE-302-M
LTE-309
FR 309 diode
Infrared Phototransistor 302
2D05
LTR-5888
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photon coupled interrupter 3101
Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
Text: INFRARED EMITTING DIODES NTE type Number 3017 3027 3028 3029A 3099 30001 Typical Total External Radiated Power mW Diagram Number Description PN Gallium Arsenide Bi-Directional Bi-Directional Maximum Forward Voltage (Volts) Reverse Voltage (Volts) DC Forward
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650nW
150nW
b4315S^
0003hl3
photon coupled interrupter 3101
photon coupled interrupter
photon coupled interrupter nte 3100 npn
phototransistor npn
photo interrupter module
darlington IR phototransistor
Si pin photodiode module
npn 940
T018
T046
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ic 67a smd
Abstract: No abstract text available
Text: Honeywell Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors FEATURES • Small package size • Glass lensed optics for efficient optical coupling • Upright or inverted mounting capability • Low profile, small size for flexible layout of multiple
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OCR Scan
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006445-2-EN
ic 67a smd
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Untitled
Abstract: No abstract text available
Text: Reflective Transducer STRT 3020 Electrical and Optical Specifications Absolute Maximum Ratings at Ta = 25°C Package Operating Temperature, Topr. Storage Temperature, Ts tg . ‘ Soldering Temperature, Tsotd. Power Dissipation, Pd.
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CI2271CÃ
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TRANSISTOR 2SC 950
Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
Text: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External Radiated Power mW Maximum Forward Voltage (Volta) VF 1.28 Vr 141 Po 15 Typical Peak Emission Wove length DC Forward Current (mA) Power Dlaalpatlon (mW) 6 If 100 Pd
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650nW
TRANSISTOR 2SC 950
phototransistor npn
NPN Transistor 5V DARLINGTON
transistor 2sc
nte 3122
SI 3105 A
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Untitled
Abstract: No abstract text available
Text: 0 .OPTEK Product Bulletin OPB 68O July 1996 Slotted Optical Flag Switch Type OPB68O Features • • • • Phototransistor output Mechanical switch replacement Printed circuit board mounting Enhanced signal to noise ratio Description The OPB 68O consists of an NPN
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OPB68O
TfiS60
Q00302S
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emitter phototransistor til 31
Abstract: n50a TRANSISTOR c 5521 D03SS23 optocoupler 450
Text: MCT2 J \ _ OPTOCOUPLER I— .T This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply to the specifications of the main part of the optocoupler market.
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E90700
0110b
804/VDE
86/HD195S4.
7Z94432
D03SS23
emitter phototransistor til 31
n50a
TRANSISTOR c 5521
optocoupler 450
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Untitled
Abstract: No abstract text available
Text: MCT2 J \ _ w O P T O C O U P L E R A This product range is one o f the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply to the specifications of the main part of the optocoupler market.
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E90700
0110b
804/VDE
86/HD195
bb53T31
bbS3R31
0035S23
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