GaAs 850 nm Infrared Emitting Diode
Abstract: TLN217
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
GaAs 850 nm Infrared Emitting Diode
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TLN217
Abstract: No abstract text available
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
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TLN217
Abstract: No abstract text available
Text: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
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silicon carbide LED
Abstract: silicon carbide led green Gallium phosphide arsenic
Text: LED Color Chart LEDtronics LED Chip Wavelength Code Code nm Color Name Fwd Voltage Intensity Vf @ 20mA 5mm LEDs Viewing Angle LED Dye Material 941 IR941 940 Infrared 1.5 16mW @ 50mA 15º 881 IR881 880 Infrared 1.7 18mW @ 50mA 15º 851 IR851 850 Infrared
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IR941
IR881
IR851
PG350
AG10K
UB500
4500K
6500K
8000K
2000mcd
silicon carbide LED
silicon carbide
led green Gallium phosphide
arsenic
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led green Gallium phosphide
Abstract: ir941 IR851 silicon carbide AG10K silicon carbide LED Gallium phosphide
Text: LED Color Chart LEDtronics LED Chip Wavelength Code Code nm Color Name Fwd Voltage Intensity Vf @ 20mA 5mm LEDs Viewing Angle LED Dye Material 941 IR941 940 Infrared 1.5 16mW @ 50mA 15º 881 IR881 880 Infrared 1.7 18mW @ 50mA 15º 851 IR851 850 Infrared 1.7
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IR941
IR881
IR851
PG350
AG10K
UB500
4500K
6500K
8000K
2000mcd
led green Gallium phosphide
silicon carbide
silicon carbide LED
Gallium phosphide
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ELM-910-927
Abstract: power led heat sink ELM Technology D-12555
Text: LED Module ELM-910-927 Preliminary 6/22/2007 Wavelength Type Technology Case Infrared LED Array Module DDH FR4/Cu-plated Description 24 20,6 Infrared LED-Array consisting of five high power LED connected in series. Chipassembly covered with plastic lenses.
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ELM-910-927
D-12555
ELM-910-927
power led heat sink
ELM Technology
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ELJ-950-228B
Abstract: No abstract text available
Text: Infrared LED - Module ELJ-950-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/GaAs plastic lens, metal case Description Outline: H=13,7 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs/GaAs structure, six chips are soldered
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ELJ-950-228B
D-12555
ELJ-950-228B
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TLN212
Abstract: No abstract text available
Text: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. •
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TLN212
136sr
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ELJ-810-228B
Abstract: IR LED 810 nm
Text: Infrared LED - Module ELJ-810-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=13 mm ± 0,5 4 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast
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ELJ-810-228B
ELJ-810-228B
IR LED 810 nm
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ELJ-810-228B
Abstract: No abstract text available
Text: Infrared LED - Module ELJ-810-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=13 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast
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ELJ-810-228B
D-12555
ELJ-810-228B
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ELJ-810-248B
Abstract: H118 IR LED 810 nm ELJ-810-248
Text: Infrared LED - Module ELJ-810-248B Radiation Type Technology Case Infrared 40 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=11.8 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast
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ELJ-810-248B
D-12555
ELJ-810-248B
H118
IR LED 810 nm
ELJ-810-248
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TLN210
Abstract: No abstract text available
Text: TLN210 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN210(F) Lead Free Product Infrared Light-emission Diode For Still Camera Light Source For Auto Focus Unit: mm • Optical radiation of current confining LED chip is condensed by a resin lens. • High output
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TLN210
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IR LED 810 nm
Abstract: "Infrared LED" k 2545 ELJ-810-248B datasheet LED infrared str 450 a ccd lens H118 infrared transistor data sheet IR LED infrared led
Text: Infrared LED - Module ELJ-810-248B Radiation Type Technology Case Infrared 40 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=11,8 mm ± 0,5 11 2,0 11 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast
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ELJ-810-248B
D-12555
IR LED 810 nm
"Infrared LED"
k 2545
ELJ-810-248B
datasheet LED infrared
str 450 a
ccd lens
H118
infrared transistor
data sheet IR LED infrared led
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Untitled
Abstract: No abstract text available
Text: New Product Guide GaA As High-Output Infrared LED Lamps TLN231 Series TLN231 Series The TLN231 Series is comprised of GaArAs infrared LED lamps which incorporate a newly developed chip. The radiant incidence of these LED lamps is twice that of conventional
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TLN231
TLN221
TPS830
TL221
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ELJ-950-228B
Abstract: No abstract text available
Text: Infrared LED – Module Preliminary data ELJ-950-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/GaAs/GaAs plastic lens, metal case Description Outline: H=13.7± 0.5 mm 4 11 High-power infrared-LED module, double-hetero AlGaAs/GaAs/GaAs structure, six chips are soldered on
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ELJ-950-228B
ELJ-950-228B
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L2656
Abstract: L9337
Text: LED Infrared LED L9337 High power LED for optical switches L9337 is an infrared LED developed for optical switches. Because a high-power LED chip is mounted, L9337 provides higher radiant output power than previous devices, yet is available at a low cost due to the improved manufacturing process. L9337 also achieves a directivity that
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L9337
L9337
L2656)
SE-171
KLED1043E01
L2656
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L2656
Abstract: L9337
Text: LED Infrared LED L9337 High power LED for optical switches L9337 is an infrared LED developed for optical switches. Because a high-power LED chip is mounted, L9337 provides higher radiant output power than previous devices, yet is available at a low cost due to the improved manufacturing process. L9337 also achieves a directivity that
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L9337
L9337
L2656)
SE-171
KLED1043E01
L2656
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"Infrared LED"
Abstract: ingaas LED L8245
Text: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.
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L8245
L8245
SE-171
KLED1034E02
"Infrared LED"
ingaas LED
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L8245
Abstract: No abstract text available
Text: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.
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L8245
L8245
SE-171
KLED1034E02
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ingaas LED
Abstract: methane L8245 SE-171 LED infrared
Text: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.
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L8245
L8245
SE-171
KLED1034E01
ingaas LED
methane
LED infrared
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L8245
Abstract: SE-171
Text: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.
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L8245
L8245
SE-171
KLED1034E01
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Untitled
Abstract: No abstract text available
Text: epitex LED CHIP ＬＥＤ C910-35 Opto-Device & Custom LED SPECIFICATION OF INFRARED LED CHIP C910-35 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs 2. Electrode Top Side N cathode )side ：Au Alloy Bottom Side P ( anode )side ：Au Alloy
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C910-35
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L8506
Abstract: SE-171 LED infrared
Text: LED Infrared LED L8506 LED emitting collimated light When an LED is used for optical encoders, it must emit a uniform, small spot light. L8506 is an infrared LED that emits such a light beam collimated by the combination of an aspheric lens. L8506 uses a non-confined structure chip that does not show an abrupt deterioration often
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L8506
L8506
SE-171
KLED1035E02
LED infrared
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Untitled
Abstract: No abstract text available
Text: ELJ-920-228B Infrared LED - M odule Radiation Type Technology Case Infrared 2 0 degrees A IG aAs/AIG aAs p lastic lens, m etal case Description High-power infrared-LED module, double-hetero AIGaAs structure, six chips are soldered on metal header, fast switching time
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OCR Scan
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ELJ-920-228B
ran500
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