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    INFINEON X-GOLD 110 Search Results

    INFINEON X-GOLD 110 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    CN-ACPRREDAA0 Amphenol Cables on Demand RCA Male Plug Cable Connector (Red) - Amphenol ACPR-RED - Gold Plated Diecast Shell Datasheet
    AV-3.5MINYRCA-015 Amphenol Cables on Demand Amphenol AV-3.5MINYRCA-015 Stereo Y Adapter Cable - Premium Gold Stereo 3.5mm (Headphone Plug) to Dual RCA Y Adapter Cable - 3.5mm Mini-Stereo Male to Dual RCA Male 15ft Datasheet
    DA14580 PLT Golden Unit Renesas Electronics Corporation Bluetooth® Low Energy 16-site Production Line Tool Kit Golden Unit Daughterboard Visit Renesas Electronics Corporation

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    Infineon X-GOLD 110

    Abstract: Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi
    Text: Product Brief X-GOLD 618 TM Cost efficient HSPA Baseband for Multimedia enabled Cellular Phones Main Features THE Infineon X-GOLD 618 is a cellular system on chip comprising the 2G/3G digital and analog baseband and the power management functions monolithically integrated in 65nm CMOS technology. It is Infineon’s 3rd


    Original     		PDF 384kbps MSC33 B153-H9353-G1-X-7600 NB09-1000 Infineon X-GOLD 110 Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi

    X-GOLD 110

    Abstract: Infineon X-GOLD 110 XGOLD110 X-GOLDTM110 XMM1100 X-GOLD XMMTM1100 infineon x-gold eWLB-184 B153-H9349-X-X-7600
    Text: Product Brief X-GOLDTM110 Ultra-Low Cost GSM/GPRS Single-Chip for Voice, SMS and basic Multimedia Main Features THE X-GOLD 110 brings the Infineon GSM single-chip ULC family to the next level of integration based on a 65nm technology node. X-GOLDTM110 is an ideal solution for ULC Music Phones supporting key features such as


    Original     		PDF X-GOLDTM110 X-GOLDTM110 XMMTM1100 B153-H9349-X-X-7600 NB08-1340 X-GOLD 110 Infineon X-GOLD 110 XGOLD110 XMM1100 X-GOLD infineon x-gold eWLB-184 B153-H9349-X-X-7600

    electrolytic capacitor 2200 uf

    Abstract: No abstract text available
    Text: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats


    Original     		PDF PTMA180402EL PTMA180402FL 40-watt H-33265-8 H-34265-8 electrolytic capacitor 2200 uf

    Untitled

    Abstract: No abstract text available
    Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized


    Original     		PDF PTFA261301E PTFA261301E 130-watt, CDMA2000

    ceramic capacitor 103 z 2kv

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


    Original     		PDF PTFA091201E PTFA091201F 120-watt, ceramic capacitor 103 z 2kv

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    LM7805

    Abstract: No abstract text available
    Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized


    Original     		PDF PTFA261301E PTFA261301E 130-watt, CDMA2000 LM7805

    p 1703 bds

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier


    Original     		PDF PTFA082201E PTFA082201F 220-watt, H-30260-2 H-31260-2 p 1703 bds

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


    Original     		PDF PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2

    LM7805

    Abstract: ptfa091201e BCP56 PTFA091201F
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt, LM7805 BCP56

    PTMA210452EL

    Abstract: PTMA210452FL RO4350 GRM422Y5V106Z050AL
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452EL PTMA210452FL 45-watt, H-33265-8 H-34265-8 50-ohm RO4350 GRM422Y5V106Z050AL

    elna capacitor 22uf

    Abstract: No abstract text available
    Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the


    Original     		PDF PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf

    GRM422Y5V106Z050AL

    Abstract: PTMA210452EL PTMA210452FL RO4350
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452EL PTMA210452FL 45-watt, H-33265-8 H-34265-8 GRM422Y5V106Z050AL RO4350

    po111

    Abstract: ELNA capacitor 100 uf 50v transistor a09
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 po111 ELNA capacitor 100 uf 50v transistor a09

    po111

    Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501GL PTFA041501HL 150-watt PG-64248-2 IS-95 po111 3773 transistor voltage diagram BCP56 LM7805 infineon gold

    100 HFK

    Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100 HFK HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805

    Untitled

    Abstract: No abstract text available
    Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full


    Original     		PDF 1522-PTF

    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    po111

    Abstract: LM7805 LM780
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501HL 150-watt PG-63248-2 PG-64248-2 IS-95 po111 LM7805 LM780

    GRM422Y5V106Z050AL

    Abstract: PTMA210452EL PTMA210452FL RO4350
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical


    Original     		PDF PTMA210452EL PTMA210452FL H-33265-8 PTMA210452EL PTMA210452FL 45-watt, H-34265-8 GRM422Y5V106Z050AL RO4350

    BCP56

    Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2 BCP56 LM7805 PTFA091201EV4

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2

    Untitled

    Abstract: No abstract text available
    Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1522-PTF