Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINEON MOISTURE SENSITIVE PACKAGE Search Results

    INFINEON MOISTURE SENSITIVE PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON MOISTURE SENSITIVE PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infineon moisture sensitive package

    Abstract: EIA-726 EIA-747 label infineon barcode label infineon lot number barcode MSL label infineon lot number barcode JESD22B-102 label infineon lot number barcode label infineon J-STD-033
    Text: R e c om m endati ons fo r P rin ted C i rc u i t Boar d Asse mbly o f Infineon TSL P /TSSLP/TS NP P ackages Ad d i tional Information June 2010 Table of Contents Table of Contents 1 Package Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    EIA-726

    Abstract: EIA-747 Infineon moisture sensitive package MIPI design guideline spansion solder profile INFINEON trace code label EIA 783 samsung bluetooth ARM926EJ-S J-STD-033
    Text: Recommendations for Printed Circuit Board Assembly Using Infineon PG-SON Packages Applic atio n Note DS1 October 2009 Wireless Solutions Edition 2009-10-06 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		PDF

    MP 7721

    Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
    Text: Additional Information, DS1, March 2008 Recommendations for Assembly of Infineon TO Packages Edition 2008-03 Published by Infineon Technologies AG 81726 München, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF IPC/EIA/JEDEC-J-STD-001 J-STD-033/-020 JESD22-B102 MP 7721 IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: PTMA080152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the 700 to 1000 MHz frequency range. It is offered in a 20-lead thermally-enhanced overmolded package for cool


    Original     		PDF PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 JESD22-A114F.

    Untitled

    Abstract: No abstract text available
    Text: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.


    Original     		PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124

    transistor c114

    Abstract: No abstract text available
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead transistor c114

    Untitled

    Abstract: No abstract text available
    Text: PTFC270051M advance specification Confidential, Limited Internal Distribution Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications


    Original     		PDF PTFC270051M PTFC270051M

    MIL-STD-1686A

    Abstract: flatiron SC75 SCD80 smd tabellen INFINEON package tqfp PART MARKING 53063 label infineon lot number
    Text: Application Support, Sep. 2002 Verarbeitungshinweise Notes on Processing Never stop thinking. Ausgabe 09.02 Edition 09.02 Herausgegeben von Infineon Technologies AG, St.-Martin-Strasse 53 81541 München Published by Infineon Technologies AG, St.-Martin-Strasse 53


    Original     		PDF

    TLE5009

    Abstract: TLE5009-E2010 TLE5009-E1010 TLE5009-E2000 TLE5009 application note TLE5009-E1000 "steering Angle Sensor" GMR SP000912764 RFMD SP000912770
    Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 0.9, 2011-07 Preliminary ATV SC Edition 2011-07 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG


    Original     		PDF TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 5009xxx TLE5009 TLE5009-E1010 TLE5009 application note "steering Angle Sensor" GMR SP000912764 RFMD SP000912770

    PTMA080152M

    Abstract: RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


    Original     		PDF PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K

    Infineon moisture sensitive package

    Abstract: No abstract text available
    Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PG-DSO-20-63 50-ohm Infineon moisture sensitive package

    GRM422Y5V106Z050AL

    Abstract: PTMA180402M RO4350
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


    Original     		PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm GRM422Y5V106Z050AL RO4350

    Infineon moisture sensitive package

    Abstract: PTMA210152M RO4350 68c21
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in


    Original     		PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 28ubstances. Infineon moisture sensitive package RO4350 68c21

    Untitled

    Abstract: No abstract text available
    Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 1.1, 2012-04 ATV SC Edition 2012-04 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 5009xxx

    Untitled

    Abstract: No abstract text available
    Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 1.1, 2012-04 ATV SC Edition 2012-04 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 5009xxx

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    Untitled

    Abstract: No abstract text available
    Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PG-DSO-20-63

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    Untitled

    Abstract: No abstract text available
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


    Original     		PDF PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63

    Untitled

    Abstract: No abstract text available
    Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PG-DSO-20-63 50-ohm

    Untitled

    Abstract: No abstract text available
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


    Original     		PDF PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm

    600F470

    Abstract: 0647x GPS 9252 PG-DSO-20-6 Potentiometer 100 ohm
    Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PG-DSO-20-63 50-ohm 600F470 0647x GPS 9252 PG-DSO-20-6 Potentiometer 100 ohm

    Infineon moisture sensitive package

    Abstract: phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon
    Text: Infineon technologies Optocoupler Manufacturing and Reliability The Concern for Optocoupler Reliability Because of the widespread use of optocouplers as an inter­ face device, optocoupler reliability has been a major con­ cern to circuit designers and components engineers. Pub­


    OCR Scan     		PDF 1-888-lnfineon Infineon moisture sensitive package phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon