SMBT3906U
Abstract: No abstract text available
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
SMBT3906U
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Untitled
Abstract: No abstract text available
Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906
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SMBT3904.
MMBT3904
SMBT3904S
SMBT3904U:
SMBT3906.
MMBT3906
SMBT3906S/U
EHA07178
SMBT3904/MMBT3904
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mmbt3904 complementary
Abstract: MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23
Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906
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Original
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PDF
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SMBT3904.
MMBT3904
SMBT3904S
SMBT3904U:
SMBT3906.
MMBT3906
SMBT3906S/U
EHA07178
SMBT3904/
mmbt3904 complementary
MMBT3904
MMBT3906
SC74
SMBT3904
SMBT3904U
SMBT3906
infineon marking code B2 SOT23
S1A SOT23
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infineon marking code B2 SOT23
Abstract: marking code TS infineon marking code B1 SOT23 infineon marking code E1 sot23
Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U
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PDF
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BCR523.
BCR523U:
BCR523
BCR523U
EHA07184
EHA07174
BCR523
BCR523U
infineon marking code B2 SOT23
marking code TS
infineon marking code B1 SOT23
infineon marking code E1 sot23
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transistor marking S2A
Abstract: SMBT3906U
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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Original
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PDF
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
transistor marking S2A
SMBT3906U
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TRANSISTOR S2A
Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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Original
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PDF
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
TRANSISTOR S2A
SMBT3906U
transistor marking s2a
s2A SOT23
MMBT3906 TP
MMBT3904
MMBT3906
SMBT3904
SMBT3906
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infineon marking code E1 sot23
Abstract: mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S infineon marking code B2 SOT23
Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906
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Original
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PDF
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SMBT3904.
MMBT3904
SMBT3904S
SMBT3904U:
SMBT3906.
MMBT3906
SMBT3904S/U
EHA07178
SMBT3904/MMBT3904
infineon marking code E1 sot23
mmbt3904 complementary
SMBT3904U
SMBT3906
MMBT3904
MMBT3906
SC74
SMBT3904
infineon marking code B2 SOT23
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transistor marking s2a
Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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Original
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PDF
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
transistor marking s2a
SMBT3906U
MMBT3904
MMBT3906
SMBT3904
SMBT3906
s2A SOT23
infineon marking code B2 SOT23
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183
BCR183W
BCR183U
EHA07183
EHA07173
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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PDF
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BCR183.
BCR183S
BCR183
BCR183W
BCR183S
BCR183U
EHA07183
EHA07173
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Untitled
Abstract: No abstract text available
Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U
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Original
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PDF
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BCR523.
BCR523U:
BCR523
BCR523U
EHA07184
EHA07174
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Untitled
Abstract: No abstract text available
Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906
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Original
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PDF
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SMBT3904.
MMBT3904
SMBT3904S
SMBT3904U:
SMBT3906.
MMBT3906
SMBT3906S/U
EHA07178
SMBT3904/
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Untitled
Abstract: No abstract text available
Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package
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Original
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PDF
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BCR523.
BCR523U:
BCR523
BCR523U
EHA07184
EHA07174
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pin ic marking code 60
Abstract: No abstract text available
Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package
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Original
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PDF
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BCR523.
BCR523U:
BCR523
BCR523U
EHA07184
EHA07174
BCR523
BCR523U
pin ic marking code 60
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183/F
BCR183W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
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Untitled
Abstract: No abstract text available
Text: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package
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BCR185.
BCR185S
BCR185/F/L3
BCR185T/W
BCR185S/U
EHA07183
EHA07173
BCR185
BCR185F
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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Original
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PDF
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BCR183.
BCR183S
BCR183/F/L3
BCR183T/W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
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BCR183
Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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PDF
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BCR183.
BCR183S
BCR183/F
BCR183W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
BCR183
BCR183F
BCR183U
BCR183W
marking WMs
infineon marking code B2 SOT23
transistor marking 6c1
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BCR148
Abstract: BCR148F BCR148L3 BCR148S BCR148T
Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package
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BCR148.
BCR148S
BCR148/F/L3
BCR148T/W
BCR148S/U
EHA07184
EHA07174
BCR148
BCR148F
BCR148
BCR148F
BCR148L3
BCR148T
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BCR169
Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
Text: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see
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BCR169.
BCR169S
BCR169/F/L3
BCR169T/W
BCR169S/U
EHA07180
EHA07266
BCR169
BCR169F
BCR169
BCR169F
BCR169L3
BCR169T
SOt323 marking code 6X
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infineon marking code B2 SOT23
Abstract: BCR523 BCR523U BCW66 BCW66H SC74
Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1)
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Original
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PDF
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BCR523.
BCR523U:
BCR523
BCR523U
EHA07184
EHA07174
infineon marking code B2 SOT23
BCR523
BCR523U
BCW66
BCW66H
SC74
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BCR141S
Abstract: BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd
Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package
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BCR141.
BCR141S
BCR141/F/L3
BCR141T/W
BCR141S/U
EHA07184
EHA07174
BCR141
BCR141F
BCR141
BCR141F
BCR141L3
BCR141T
bcr1
marking code wd
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SOt323 marking code 6X
Abstract: BCR198 BCR198W
Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package
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BCR198.
BCR198S:
BCR198
BCR198W
BCR198S
EHA07183
EHA07173
BCR198S
SOt323 marking code 6X
BCR198W
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marking WHs
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
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BCR108.
BCR108S:
BCR108
BCR108W
BCR108S
EHA07184
EHA07174
BCR108S
marking WHs
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