Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINEON MARKING CODE B1 SOT23 Search Results

    INFINEON MARKING CODE B1 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy

    INFINEON MARKING CODE B1 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/MMBT3904 PDF

    mmbt3904 complementary

    Abstract: MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/ mmbt3904 complementary MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23 PDF

    infineon marking code B2 SOT23

    Abstract: marking code TS infineon marking code B1 SOT23 infineon marking code E1 sot23
    Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U


    Original     		BCR523. BCR523U: BCR523 BCR523U EHA07184 EHA07174 BCR523 BCR523U infineon marking code B2 SOT23 marking code TS infineon marking code B1 SOT23 infineon marking code E1 sot23 PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U PDF

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ TRANSISTOR S2A SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3906 PDF

    infineon marking code E1 sot23

    Abstract: mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S infineon marking code B2 SOT23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3904S/U EHA07178 SMBT3904/MMBT3904 infineon marking code E1 sot23 mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 infineon marking code B2 SOT23 PDF

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking s2a SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3906 s2A SOT23 infineon marking code B2 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR183. BCR183S BCR183 BCR183W BCR183U EHA07183 EHA07173 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR183. BCR183S BCR183 BCR183W BCR183S BCR183U EHA07183 EHA07173 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U


    Original     		BCR523. BCR523U: BCR523 BCR523U EHA07184 EHA07174 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/ PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package


    Original     		BCR523. BCR523U: BCR523 BCR523U EHA07184 EHA07174 PDF

    pin ic marking code 60

    Abstract: No abstract text available
    Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package


    Original     		BCR523. BCR523U: BCR523 BCR523U EHA07184 EHA07174 BCR523 BCR523U pin ic marking code 60 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR183. BCR183S BCR183/F BCR183W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR185. BCR185S BCR185/F/L3 BCR185T/W BCR185S/U EHA07183 EHA07173 BCR185 BCR185F PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR183. BCR183S BCR183/F/L3 BCR183T/W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F PDF

    BCR183

    Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR183. BCR183S BCR183/F BCR183W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F BCR183 BCR183F BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1 PDF

    BCR148

    Abstract: BCR148F BCR148L3 BCR148S BCR148T
    Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR148. BCR148S BCR148/F/L3 BCR148T/W BCR148S/U EHA07184 EHA07174 BCR148 BCR148F BCR148 BCR148F BCR148L3 BCR148T PDF

    BCR169

    Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
    Text: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see


    Original     		BCR169. BCR169S BCR169/F/L3 BCR169T/W BCR169S/U EHA07180 EHA07266 BCR169 BCR169F BCR169 BCR169F BCR169L3 BCR169T SOt323 marking code 6X PDF

    infineon marking code B2 SOT23

    Abstract: BCR523 BCR523U BCW66 BCW66H SC74
    Text: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1)


    Original     		BCR523. BCR523U: BCR523 BCR523U EHA07184 EHA07174 infineon marking code B2 SOT23 BCR523 BCR523U BCW66 BCW66H SC74 PDF

    BCR141S

    Abstract: BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR141. BCR141S BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd PDF

    SOt323 marking code 6X

    Abstract: BCR198 BCR198W
    Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR198. BCR198S: BCR198 BCR198W BCR198S EHA07183 EHA07173 BCR198S SOt323 marking code 6X BCR198W PDF

    marking WHs

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs PDF