Untitled
Abstract: No abstract text available
Text: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP62 PNP 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration
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BSP50-BSP52
BSP60
BSP62
BSP50
OT223
BSP51
BSP52
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BCP62
Abstract: 1B marking transistor BSP50 BSP52 BSP60 BSP61 BSP62
Text: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50.BSP52 NPN 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking
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BSP60-BSP62
BSP50.
BSP52
BSP60
OT223
BSP61
BSP62
BCP62
1B marking transistor
BSP50
BSP52
BSP60
BSP61
BSP62
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Untitled
Abstract: No abstract text available
Text: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50.BSP52 NPN 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration
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BSP60-BSP62
BSP50.
BSP52
BSP60
BSP61
BSP62
BSP62
OT223
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB044N08NN3 G Data Sheet 1.4, 2011-05-27 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB044N08NN3 G 1 Description OptiMOS™80V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSB044N08NN3
OptiMOSTM80V
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BSP 450
Abstract: No abstract text available
Text: BSP60 . BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B
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BSP60
BSP62
BSP50
BSP52
VPS05163
BSP60
BSP61
BSP62
OT223
BSP 450
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.2, 2011-06-03 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSB012NE2LX
OptiMOSTM25V
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.3, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSB012NE2LX
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MARKING BSP52
Abstract: BSP50 BSP51 BSP52 BSP60 BSP50-BSP52 EHP00663 tp107
Text: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP52 PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking
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BSP50-BSP52
BSP60
BSP52
BSP50
OT223
BSP51
MARKING BSP52
BSP50
BSP51
BSP52
BSP50-BSP52
EHP00663
tp107
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSB014N04LX3
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BSB165N15NZ3 G
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB165N15NZ3 G Data Sheet 2.2, 2011-07-20 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB165N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSB165N15NZ3
OptiMOSTM150V
BSB165N15NZ3 G
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powermosfet Gate Drive
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSF077N06NT3
OptiMOSTM60V
powermosfet Gate Drive
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Untitled
Abstract: No abstract text available
Text: BSP50 . BSP52 NPN Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B
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BSP50
BSP52
BSP60
BSP62
VPS05163
BSP50
BSP51
BSP52
OT223
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BCP62
Abstract: No abstract text available
Text: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP50.BSP52 NPN 1 Type Marking Pin Configuration Package BSP60 BSP60 1=B 2=C 3=E 4=C - - SOT223 BSP61 BSP61
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BSP60-BSP62
BSP50.
BSP52
BSP60
BSP61
BSP62
BSP62
OT223
BCP62
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BSP50
Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
Text: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP60 - BSP52 PNP 1 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51
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BSP50-BSP52
BSP60
BSP52
BSP50
OT223
BSP51
BSP50
BSP51
BSP52
BSP50-BSP52
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bsb008ne2lx
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB008NE2LX Data Sheet 1.3, 2011-09-16 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB008NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSB008NE2LX
OptiMOSTM25V
bsb008ne2lx
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSB014N04LX3
OptiMOSTM40V
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BSP603S2L
Abstract: VPS05163
Text: Target data sheet BSP603S2L OptiMOS =Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V Drain-source on-state resistance RDS on 33 mΩ Continuous drain current ID 5.2 A • Enhancement mode • Avalanche rated
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BSP603S2L
OT-223
VPS05163
BSP603S2L
VPS05163
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TRANSISTOR SMD MARKING CODE kd
Abstract: No abstract text available
Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information
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OT-223
Q67000-S306
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
TRANSISTOR SMD MARKING CODE kd
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Untitled
Abstract: No abstract text available
Text: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation
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Q62702-S600
E6296
SS229
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
G133771
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smd transistor m7
Abstract: No abstract text available
Text: BSP 317 Infineon •eh n o l o g I«s SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS(th = "0.8.-2.0 V V) sP Type BSP 317 -200 V Type BSP 317 Ordering Code Q67000-S94 -0.37 A ffDS(on) Package 6O SOT-223 Marking
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OCR Scan
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Q67000-S94
OT-223
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd transistor m7
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smd code LGG
Abstract: No abstract text available
Text: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information
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OCR Scan
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Q67000-S070
OT-223
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd code LGG
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A1E transistor
Abstract: No abstract text available
Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107
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Q67000-S078
E6288
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A1E transistor
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Untitled
Abstract: No abstract text available
Text: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking
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OCR Scan
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Q67000-S132
VPS05557
OT-23
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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JB TRANSISTOR SMD MARKING CODE
Abstract: Q62702-S217
Text: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V
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VPTO5540
Q62702-S217
E6296
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
JB TRANSISTOR SMD MARKING CODE
Q62702-S217
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