Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINEON MARKING AMPLIFIER Search Results

    INFINEON MARKING AMPLIFIER Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON MARKING AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)


    Original     		PDF BGA524N6E6327XTSA1 BGA524N6

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon marking L2 BFR193L3

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR

    BFR193L3

    Abstract: BFR340L3 marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 BFR193L3 BFR340L3 marking FA

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR949L3 BFR94
    Text: BFR949L3 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR949L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR949L3 BFR94

    Untitled

    Abstract: No abstract text available
    Text: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3


    Original     		PDF BFS360L6 BFR360L3)

    infineon AN077

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon AN077

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR193L3

    LNA marking CODE R0

    Abstract: No abstract text available
    Text: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG


    Original     		PDF BGA715N7 LNA marking CODE R0

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR193L3 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR193L3 AEC-Q101

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 marking FA

    Untitled

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3

    marking code E2 p SMD Transistor

    Abstract: smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) marking code E2 p SMD Transistor smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag

    BFR94

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3 BFR94

    Germanium power

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


    Original     		PDF BGA615L7 D-81541 BGA615L7 BGA619 Germanium power

    transistor SMD 12E

    Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) transistor SMD 12E SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36

    MARKING CODE SMD IC

    Abstract: MARKING SMD IC CODE SMD 6PIN IC MARKING CODE marking CE SMD MARKING CODE 102c marking code my SMD Transistor npn MARKING SMD NPN TRANSISTOR BR TRANSISTOR SMD MARKING CODE ag RF NPN POWER TRANSISTOR 3 GHZ smd TRANSISTOR code b2
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) MARKING CODE SMD IC MARKING SMD IC CODE SMD 6PIN IC MARKING CODE marking CE SMD MARKING CODE 102c marking code my SMD Transistor npn MARKING SMD NPN TRANSISTOR BR TRANSISTOR SMD MARKING CODE ag RF NPN POWER TRANSISTOR 3 GHZ smd TRANSISTOR code b2

    transistor marking RHs

    Abstract: BCR108S BFS483 bcr1 marking RHs
    Text: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see


    Original     		PDF BFS483 EHA07196 OT363 transistor marking RHs BCR108S BFS483 bcr1 marking RHs

    SMD 6PIN IC MARKING CODE

    Abstract: SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) SMD 6PIN IC MARKING CODE SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36

    Untitled

    Abstract: No abstract text available
    Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 • Low noise figure: 1.1 dB at 1.8 GHz 1 2 • SMD leadless package • Excellent ESD performance typical value 1500V HBM


    Original     		PDF BFR460L3

    SMD MARKING CODE f2

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231N7 SMD MARKING CODE f2

    Q62702-F1394

    Abstract: No abstract text available
    Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 Q62702-F1394