infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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6.5kV IGBT
Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany
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D-59581
D-85579
6.5kV IGBT
6.5kV IGBT loss
igbt 6.5kv
igbt3 igbt2 infineon
L280N
A-9500
igbt2 infineon
infineon igbt3 ohm
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
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3rd Generation of 1200V IGBT Modules
Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Text: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings
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Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RT3G
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Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RT3G
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Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Text: APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q3 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C Application Q1 CR1 Trench & Field Stop IGBT3 Q1, Q3:
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APTCV50H60T3G
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Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RCT3G
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Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RCT3G
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Abstract: No abstract text available
Text: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45BT3G
APTCV60HM45BCT3G
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Abstract: No abstract text available
Text: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45BT3G
APTCV60HM45BCT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V
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Abstract: No abstract text available
Text: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter
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APTCV60HM45BT3G
APTCV60HM45BCT3G
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Abstract: No abstract text available
Text: APTCV60HM45BC20T3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTGV50H60BT3G
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C
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APTGV50H60BT3G
APTGV50H60BT3G
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Abstract: No abstract text available
Text: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C
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APTGV50H60BT3G
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B32654-S0474
Abstract: OEA240 600V 300A igbt dc to dc boost converter b32654s0474k566 EICEDRIVER 2PS0900R17KE3-3G X1HB handbuch rohren 4PS0300R12KS4-3G b32654s
Text: PrimeSTACK Dokumentation und Betriebsanleitung Produkt: PrimeSTACK Anwendung: Strom- und Frequenzumrichter Revision: Rev. 2.3 30.Oktober 2008 Infineon Technologies AG 2006 – Alle Rechte vorbehalten Inhalt 1 Einleitung 4 2 Das PrimeSTACK im Überblick
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Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C
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APTGV50H60BT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45BC20T3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter
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