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    INFINEON IGBT2 CYCLING Search Results

    INFINEON IGBT2 CYCLING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADUC842BCPZ62-5 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy
    ADUC842BCPZ62-3 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy
    ADUC841BCPZ62-5 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy
    ADUC842BSZ62-3 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy
    ADUC842BSZ62-5 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy
    ADUC841BCPZ62-3 Analog Devices Microconverter 1-cycle version Visit Analog Devices Buy

    INFINEON IGBT2 CYCLING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infineon power cycling igbt3

    Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
    Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,


    Original     		PDF D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FS50R12KT3

    Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul
    Text: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract


    Original     		PDF