Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINEON IGBT DIE 1200V Search Results

    INFINEON IGBT DIE 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON IGBT DIE 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7151

    Abstract: SIGC42T120CS2 infineon igbt die 1200V
    Text: Preliminary SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		SIGC42T120CS2 Q67050sawn A4086-A003 7151-T, 7151 SIGC42T120CS2 infineon igbt die 1200V PDF

    SIGC81T120R2CS

    Abstract: infineon igbt die 1200V A4050
    Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		SIGC81T120R2CS SIGC81T120R2CS Q67050sawn A4050-A001 7161-T, infineon igbt die 1200V A4050 PDF

    SIGC156T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		SIGC156T120R2CS SIGC156T120R2CS Q67050sawn A4085-A003 7181-T, infineon igbt die 1200V PDF

    SIGC121T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		SIGC121T120R2CS SIGC121T120R2CS Q67050sawn A4074-A003 7171-T, infineon igbt die 1200V PDF

    SIGC223T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC223T120R2CS 1200V 150A


    Original     		SIGC223T120R2CS SIGC223T120R2CS 7121T, infineon igbt die 1200V PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T, PDF

    FS75R12KS4

    Abstract: SIGC121T120R2CS infineon igbt die 1200V
    Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, FS75R12KS4 infineon igbt die 1200V PDF

    fs100r12ks4

    Abstract: SMPS IC 2003 SIGC156T120R2CS infineon igbt die 1200V
    Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T, fs100r12ks4 SMPS IC 2003 infineon igbt die 1200V PDF

    B32654-S0474

    Abstract: OEA240 600V 300A igbt dc to dc boost converter b32654s0474k566 EICEDRIVER 2PS0900R17KE3-3G X1HB handbuch rohren 4PS0300R12KS4-3G b32654s
    Text: PrimeSTACK Dokumentation und Betriebsanleitung Produkt: PrimeSTACK Anwendung: Strom- und Frequenzumrichter Revision: Rev. 2.3 30.Oktober 2008 Infineon Technologies AG 2006 – Alle Rechte vorbehalten Inhalt 1 Einleitung 4 2 Das PrimeSTACK im Überblick


    Original     		PDF

    50GD120

    Abstract: No abstract text available
    Text: SIGC81T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling  integrated gate resistor This chip is used for:  power module BSM 50GD120DN2 C Applications:


    Original     		SIGC81T120R2C 50GD120DN2 L7161MM, 50GD120 PDF

    BUP213

    Abstract: SIGC25T120C SIGC25T120CL 280-400 BUP21
    Text: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120CL VCE ICn 1200V


    Original     		SIGC25T120C SIGC25T120CL C67078-A4674A001 7141-M, BUP213 SIGC25T120C SIGC25T120CL 280-400 BUP21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		SIGC25T120CL BSM15GD120DLC E3224 Q67041sawn A4704-A003 7141-P, PDF

    SIGC84T120R3

    Abstract: No abstract text available
    Text: Preliminary SIGC84T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC84T120R3 VCE ICn 1200V 75A This chip is used for:


    Original     		SIGC84T120R3 Q67050A4107-A001 L7671A, SIGC84T120R3 PDF

    SIGC158T120R3L

    Abstract: a4211
    Text: Preliminary SIGC158T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC158T120R3L VCE ICn 1200V 150A This chip is used for:


    Original     		SIGC158T120R3L Q67050sawn A4211-A101 L7691B, SIGC158T120R3L a4211 PDF

    SIGC41T120R3

    Abstract: No abstract text available
    Text: Preliminary SIGC41T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC41T120R3 VCE ICn 1200V 35A This chip is used for:


    Original     		SIGC41T120R3 Q67050A4105-A001 L7651A, SIGC41T120R3 PDF

    l 7251 3.1

    Abstract: l 7251 A001 SGP02N120 SIGC06T120CS
    Text: Preliminary SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120


    Original     		SIGC06T120CS SGP02N120 Q67050-A4115sawn 7251-S, l 7251 3.1 l 7251 A001 SGP02N120 SIGC06T120CS PDF

    SIGC20T120L

    Abstract: No abstract text available
    Text: Preliminary SIGC20T120L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC20T120L VCE ICn 1200V 15A This chip is used for:


    Original     		SIGC20T120L Q67050sawn A4205-A101 L7631B, SIGC20T120L PDF

    141002

    Abstract: SIGC109T120R3L
    Text: Preliminary SIGC109T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3L VCE ICn 1200V 100A This chip is used for:


    Original     		SIGC109T120R3L Q67050sawn A4210-A101 L7681B, 141002 SIGC109T120R3L PDF

    SIGC158T120R3

    Abstract: No abstract text available
    Text: Preliminary SIGC158T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC158T120R3 VCE ICn 1200V 150A This chip is used for:


    Original     		SIGC158T120R3 Q67050A4109-A001 L7691A, SIGC158T120R3 PDF

    BSM25GD120DLC

    Abstract: E3224 SIGC42T120CL
    Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CL VCE ICn 1200V 25A This chip is used for:


    Original     		SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A003 7151-P, E3224 SIGC42T120CL PDF

    SIGC84T120R3L

    Abstract: A4209-A101
    Text: Preliminary SIGC84T120R3L 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC84T120R3L VCE ICn 1200V 75A This chip is used for:


    Original     		SIGC84T120R3L Q67050sawn A4209-A101 L7671B, SIGC84T120R3L A4209-A101 PDF

    bup 314

    Abstract: SIGC42T120C
    Text: Preliminary SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications:


    Original     		SIGC42T120C Q67041sawn A4724-A001 7151-M, bup 314 SIGC42T120C PDF

    SIGC41T120R3

    Abstract: No abstract text available
    Text: Preliminary SIGC41T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC41T120R3 VCE ICn 1200V 35A This chip is used for:


    Original     		SIGC41T120R3 Q67050A4105-A001 651-A, SIGC41T120R3 PDF

    SIGC12T120

    Abstract: ic 2028
    Text: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		SIGC12T120 Q67050A4102-A001 L7621A, SIGC12T120 ic 2028 PDF