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    INFINEON IGBT DIE 1200V Search Results

    INFINEON IGBT DIE 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON IGBT DIE 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7151

    Abstract: SIGC42T120CS2 infineon igbt die 1200V
    Text: Preliminary SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050sawn A4086-A003 7151-T, 7151 SIGC42T120CS2 infineon igbt die 1200V

    SIGC81T120R2CS

    Abstract: infineon igbt die 1200V A4050
    Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		PDF SIGC81T120R2CS SIGC81T120R2CS Q67050sawn A4050-A001 7161-T, infineon igbt die 1200V A4050

    SIGC25T120CS2

    Abstract: infineon igbt die 1200V infineon IGBT 1200v
    Text: Preliminary SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CS2 VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CS2 555in 7141-T, SIGC25T120CS2 infineon igbt die 1200V infineon IGBT 1200v

    SIGC156T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		PDF SIGC156T120R2CS SIGC156T120R2CS Q67050sawn A4085-A003 7181-T, infineon igbt die 1200V

    SIGC121T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		PDF SIGC121T120R2CS SIGC121T120R2CS Q67050sawn A4074-A003 7171-T, infineon igbt die 1200V

    SIGC42T120CS2

    Abstract: infineon igbt die 1200V an 7151
    Text: Preliminary SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050A4086-A003 7151-T, SIGC42T120CS2 infineon igbt die 1200V an 7151

    SIGC223T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC223T120R2CS 1200V 150A


    Original     		PDF SIGC223T120R2CS SIGC223T120R2CS 7121T, infineon igbt die 1200V

    Untitled

    Abstract: No abstract text available
    Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		PDF SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		PDF SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		PDF SIGC81T120R2CS Q67050A4050-A001 SIGC81T120R2CS 7161-T,

    infineon igbt die 1200V

    Abstract: SIGC156T120R2CS
    Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		PDF SIGC156T120R2CS Q67050A4085-A003 SIGC156T120R2CS 7181-T, infineon igbt die 1200V

    infineon igbt die 1200V

    Abstract: 7141-T SIGC25T120CS2 Q67050-A4197
    Text: Preliminary SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CS2 VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CS2 Q67050-A4197 7141-T, infineon igbt die 1200V 7141-T SIGC25T120CS2 Q67050-A4197

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CQ IGBT Chip in Fieldstop -technology FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient Chip Type SIGC42T120CQ VCE ICn 1200V 25A This chip is used for: • IGBT Modules


    Original     		PDF SIGC42T120CQ SP0002-04966 L7151Q,

    FS75R12KS4

    Abstract: SIGC121T120R2CS infineon igbt die 1200V
    Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		PDF SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, FS75R12KS4 infineon igbt die 1200V

    Untitled

    Abstract: No abstract text available
    Text: SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC223T120R2CS 1200V 150A


    Original     		PDF SIGC223T120R2CS SIGC223T120R2CS 7121T,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		PDF SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050A4338-A101 7151-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050A4086-A003 7151-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original     		PDF SIGC121T120R2CS Q67050A4074-A003 SIGC121T120R2CS 7171-T,

    FP25R12

    Abstract: No abstract text available
    Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050A4338-A101 7151-T, FP25R12

    SIGC156T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		PDF SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T, infineon igbt die 1200V

    NF 022

    Abstract: SIGC81T120R2CS infineon igbt die 1200V
    Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V


    Original     		PDF SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T, NF 022 infineon igbt die 1200V

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CS2 Q67050A4338-A101 7151-T,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A


    Original     		PDF SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T,