SLE 5542
Abstract: SLB 9635 SLB9635 SLB 9635 TT1.2 SLE 66R35NB SLE 6636 Eurochip sle 6636 66CLX641P 6636COM-C gsm TM2 module
Text: 2006/2007 Published by Infineon Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Chip Card + Security ICs Edition July 2006 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006.
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thir000067773
SP000096151
SP000096152
SP000096149
SP000096150
SP000096154
SP000096155
SP000096153
SP000060206
SP000060207
SLE 5542
SLB 9635
SLB9635
SLB 9635 TT1.2
SLE 66R35NB
SLE 6636 Eurochip
sle 6636
66CLX641P
6636COM-C
gsm TM2 module
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Infineon technology roadmap
Abstract: ESD5V3S1U-02LS Mini DisplayPort connector ESD5V3S1B-02LRH ESD5V3S1U-02LRH ESD5V3U1U-02LS ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0R1B-02LRH ESD8V0R1B-02LS
Text: Since the introduction of the world’s smallest TVS diode Typical applications protected by INFINEON TVS dio- back in 2007, INFINEON has greatly enlarged its portfolio des include see also Table 1 : of small and thin TVS diodes. Today INFINEON continues
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microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
microwave transistor bfy193
BFY193
Micro-X marking "Fp"
GaAs Amplifier Micro-X Marking k
BAS40
BFY180
BFY405
BXY42
CFY25
micro-x 420
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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A01 MMIC
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
neares20
GPS05605
OT343
A01 MMIC
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IN5048
Abstract: Germanium Power Devices BGA614 Germanium Amplifier
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
GPS05605
OT343
IN5048
Germanium Power Devices
BGA614
Germanium Amplifier
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Untitled
Abstract: No abstract text available
Text: BGS18MN14 SP8T Diversity Antenna Switch with MIPI RFFE Interface Data Sheet Revision 3.0 - July 3, 2014 Power Management & Multimarket Edition July 3, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2014 Infineon Technologies AG All Rights Reserved.
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BGS18MN14
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Germanium Power Devices
Abstract: BGA612
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
726-BGA612H6327XT
H6327
Germanium Power Devices
BGA612
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Germanium Power Devices
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA616
GPS05605
OT343
Germanium Power Devices
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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murata diversity SP4T
Abstract: No abstract text available
Text: BGS14BN14 RF SP4T Switch Preliminary Data Sheet Revision 0.3, 2013-07-10 Preliminary Power Management & Multimarket Edition July 10, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGS14BN14
TRX04
TRX03
TRX02
TRX01
murata diversity SP4T
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Untitled
Abstract: No abstract text available
Text: Data Sheet, May 2006 BGA622L7 Wide Band Low Noise Amplifier with Integrated 2kV HBM ESD Protection MMIC Silicon Discretes Edition 2006-05-19 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.
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BGA622L7
GPC09484
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bga616
Abstract: Germanium Power Devices BGA616H6327
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA616
GPS05605
OT343
726-BGA616H6327XT
H6327
bga616
Germanium Power Devices
BGA616H6327
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Untitled
Abstract: No abstract text available
Text: BGS15BN14 RF SP5T Switch Preliminary Data Sheet Revision 0.3, 2013-07-10 Preliminary Power Management & Multimarket Edition July 10, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGS15BN14
TRX05
TRX04
TRX03
TRX02
TRX01
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
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Germanium Power Devices
Abstract: GPS05605
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
Germanium Power Devices
GPS05605
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1575-24
Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
Text: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev. 1.0 2010-03-09 RF and Protection Devices Edition 2010-03-09 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BFP640FESD
BFP640FESD
1575MHz
AN194
proper2010-03-09
1575MHz
1575-24
BPF640
bfp640f
Texas Instruments 4100 GPS
gsm mobile jammer
mobile jammer
mobile signal jammer
AN194
BPF640FESD
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Untitled
Abstract: No abstract text available
Text: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.3, 2014-04-01 Power Management & Multimarket Edition April 1, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG
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77mm2
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PBA31308
Abstract: PBA 31308 T8753 Infineon Specific HCI Commands bluetooth LDA312G7313F-237 Infineon_Specific_HCI_Commands LGA voiding T8753-2 BST-2450 2450 MHz low noise amplifier MWO circuit
Text: eUniStone BlueMoon Universal Platform Embedded PBA 31308/2, Version 1.11 User’s Manual Hardware Description Revision 1.1, 2010-04-15 Wireless Solutions Edition 2010-04-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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DIODE 0.7v
Abstract: Diode Equivalent BAT62 BAT62-L704 schottky diode cross reference AN185 pn junction diode ideality factor SCHOTTKY DIODES CROSS REFERENCE ADS2008 BAT62 BAT62-07L4
Text: Low Barrier Schottky Diode BAT62 RF Power Detection A pplication Note AN185 Revision: V1.0 Date: 21-12-2009 RF and Protection Devices Edition 21-12-2009 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BAT62
AN185
AN185,
BAT62:
DIODE 0.7v
Diode Equivalent BAT62
BAT62-L704
schottky diode cross reference
AN185
pn junction diode ideality factor
SCHOTTKY DIODES CROSS REFERENCE
ADS2008
BAT62
BAT62-07L4
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Untitled
Abstract: No abstract text available
Text: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.4, 2014-05-27 Power Management & Multimarket Edition May 27, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG
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77mm2
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Untitled
Abstract: No abstract text available
Text: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.0, 2013-08-09 Power Management & Multimarket Edition August 9, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG
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77mm2
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Untitled
Abstract: No abstract text available
Text: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.1, 2013-11-29 Power Management & Multimarket Edition November 29, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG
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77mm2
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gaas fet micro-X Package marking
Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and
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