DIN EN 60352-2
Abstract: IEC 60249-2-4 60352-2 DIN7991 IEC60747-15 41611 60749 IEC60721-3-1 IEC 60249-2-12 copper bond wire infineon
Text: Application Note, V1.0, October 2009 AN 2009-09 Assembly Instruction for SmartPIM1 and SmartPACK1 modules Industrial Power Edition 2009-10-22 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009. All Rights Reserved.
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DIN EN 60352-2
Abstract: Norm SN 29500-5 DIN EN 60352-5 IEC 60249-2-12 41611-4 60352-2 IEC 60249-2 AN-2006-02 60352 60749
Text: Application Note, V1.0, October 2009 AN 2009-09 Montagehinweise für SmartPIM1 und SmartPACK1 Module Industrial Power Edition 2009-10-22 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER
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capacitive pressure sensor array
Abstract: consumer LOW PRESSURE SENSOR Q62705K352 signal conditioning circuits of map sensor Q62705-K352 ic PRESSURE SENSOR IC Sensors kp120 INFINEON DATECODE infineon pressure sensor ic DSOF pressure air automotive
Text: KP120 Sensory Thinking . KP120 Absolute Pressure Sensor IC Fully Temperature Compensated On-Chip Signal Conditioning And Calibration Low Cost Surface Mounted Version Semiconductor Sensors 1 04.01 KP120 Table of contents 1 Product Description 3 General Features
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KP120
capacitive pressure sensor array
consumer LOW PRESSURE SENSOR
Q62705K352
signal conditioning circuits of map sensor
Q62705-K352
ic PRESSURE SENSOR
IC Sensors kp120
INFINEON DATECODE
infineon pressure sensor ic DSOF
pressure air automotive
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capacitive pressure sensor array
Abstract: Q62705K352 EXXXX signal conditioning circuits of map sensor infineon pressure sensor KP120 MARKING CODE SMD IC IC Sensors kp120 pressure sensor array cost of IC Sensors kp120
Text: KP120 Sensory Thinking . KP120 Absolute Pressure Sensor IC Fully Temperature Compensated On-Chip Signal Conditioning And Calibration Low Cost Surface Mounted Version Semiconductor Sensors 1 10.01 KP120 Table of contents 1 Product Description 3 General Features
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KP120
capacitive pressure sensor array
Q62705K352
EXXXX
signal conditioning circuits of map sensor
infineon pressure sensor
KP120
MARKING CODE SMD IC
IC Sensors kp120
pressure sensor array
cost of IC Sensors kp120
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NWR150
Abstract: R150 filter for GPS INFINEON DATECODE
Text: Target Datasheet Version 1.4 NWR150 RF Band Pass BAW-Filter for GPS Features • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter • Passband: GPS 1575.42 ± 1 MHz • High selectivity and low temperature drift, typically -21 ppm/K • Leadless Plastic Package for Surface Mounted Technology (SMT)
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NWR150
NWR150
R150
filter for GPS
INFINEON DATECODE
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NWR190
Abstract: R190
Text: Target Datasheet Version 1.4 NWR190 CDMA RX BAW-filter for PCS Band Features • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter • Passband: PCS CDMA Rx 1930 . 1990 MHz • High selectivity and low temperature drift • Leadless Plastic Package for Surface Mounted Technology (SMT)
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NWR190
NWR190
R190
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INFINEON PART MARKING
Abstract: INFINEON package PART MARKING NWT190 T190 INFINEON "part marking"
Text: Target Datasheet Version 1.2 NWT190 CDMA TX BAW-filter for PCS Band Features • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter • Passband: CDMA Tx 1850 . 1910 MHz • Replacement of a splitband SAW-filter / switch solution - saving board space
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NWT190
NWT190
INFINEON PART MARKING
INFINEON package PART MARKING
T190
INFINEON "part marking"
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INFINEON DATECODE
Abstract: NWR190 R190
Text: PRELIMINARY Datasheet Version 2.2 NWR190 CDMA RX BAW-filter for PCS Band Features • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter • Passband: PCS CDMA Rx 1930 . 1990 MHz • High selectivity and low temperature drift (TCF = -18 ppm/K) •
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NWR190
NWR190
INFINEON DATECODE
R190
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50p03l
Abstract: DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3
Text: SPD50P03L OptiMOS -P Small-Signal-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode 7 ID V mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated P-TO252-5-3 P-DSO-8 • dv /dt rated • High current rating
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SPD50P03L
P-TO252-5-3
Q67042-S4076
50P03L
PG-TO252-5-3
SP000086729
50P03L
DIN 6880
P-TO252
P-TO252-5
marking D50
SPD50P03L
P-TO252-5-3
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NWT190
Abstract: T190
Text: PRELIMINARY Datasheet Version 2.2 NWT190 CDMA TX Full Band BAW-filter for US PCS Features • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter • Passband: CDMA Tx 1850 . 1910 MHz • High selectivity and low temperature drift (TCF = -18 ppm/K)
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NWT190
NWT190
T190
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50p03l
Abstract: INFINEON DATECODE 50p03 P-TO252-5-3 DIN 6880
Text: SPD50P03LG OptiMOS -P Small-Signal-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode 7 ID V mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated P-TO252-5-3 P-DSO-8 • dv /dt rated • High current rating
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SPD50P03LG
P-TO252-5-3
SPD50P03L
SPD50P03L
PG-TO252-5-3
50P03L
INFINEON DATECODE
50p03
DIN 6880
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TPM infineon SLB 9635 TT
Abstract: SLB9635TT12 SLB9635TT SLB 9635 infineon tpm circuit DATABOOK
Text: Short Databook, V 1 .0, July 2011 TPM SLB 9635 TT 1.2 Trusted Platform Module PUBLIC Chipcard & Security Platform Security N e v e r s t o p t h i n k i n g SLB 9635 TT 1.2 PUBLIC All characteristics described in this document might change without further notice.
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D-85579
TPM infineon SLB 9635 TT
SLB9635TT12
SLB9635TT
SLB 9635
infineon tpm circuit
DATABOOK
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simple circuit diagram of electronic choke with t
Abstract: B82432-T1163-K ss14 do-214ac CISPR25 IEC62132-4 datecode epcos EPCOS 2.2UH 3A l200 application sheet TLE6365 SS14 DIODE dc-dc
Text: Application Note, V 1.0, 11/2003 TLE6365 Application Circuit Layout- and EMC Filter Design Automotive Power EMC Center Never stop thinking. TLE 6365 1 Abstract This Application Note presents the application circuit and associated circuit layout for the DC-DC converter TLE6365. The TLE6365 is a buck converter with an integrated
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TLE6365
TLE6365.
simple circuit diagram of electronic choke with t
B82432-T1163-K
ss14 do-214ac
CISPR25
IEC62132-4
datecode epcos
EPCOS 2.2UH 3A
l200 application sheet
SS14 DIODE dc-dc
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF75R12W1H4F_B11 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications ElektrischeEigenschaften • NiedrigeSchaltverluste
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DF75R12W1H4F
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label infineon lot number barcode
Abstract: barcode label infineon label infineon lot number label infineon barcode INFINEON LOT NUMBER code label label infineon INFINEON DATECODE 4625-B6
Text: Application Notes 7.2.3 KP110: Package Information Packaging • Mode of delivery: Sawed wafers on adhesive foil in a sealed pack with max. 25 wafer in one pack. The foil is not expanded before delivery. • Diameter of the wafer: 6 Inch = 150 mm • Diameter of the foil: 185 mm
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KP110:
4625-B6
PF126364
KP120:
KP120
EHA07552
EHA07553
EHA07554
label infineon lot number barcode
barcode label infineon
label infineon lot number
label infineon barcode
INFINEON LOT NUMBER code label
label infineon
INFINEON DATECODE
4625-B6
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 太阳能应用 TypicalApplications • SolarApplications 电气特性 • 低开关损耗 ElectricalFeatures • LowSwitchingLosses
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DF75R12W1H4F
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Untitled
Abstract: No abstract text available
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DF75R12W1H4F_B11 J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • ソーラーアプリケーション TypicalApplications • SolarApplications
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DF75R12W1H4F
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F3L80R12W1H3
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L80R12W1H3_B11 VorläufigeDaten/PreliminaryData
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F3L80R12W1H3
thinQHSiCSchottky-Diode600V
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DF160R12W2H3F
Abstract: DF160R12W2H3
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF160R12W2H3F_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 160A / ICRM = 320A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications
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DF160R12W2H3F
thinQHSiCSchottky-Diode1200V
thinQHSiCSchottkydiode1200V
DF160R12W2H3
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F3L80R12W1H3
Abstract: E83335
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L80R12W1H3_B11 EasyPACK模块采用第二类中点钳位拓扑带有pressfit压接管脚和温度检测NTC 初步数据/PreliminaryData
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F3L80R12W1H3
thinQH600V
thinQHSiCSchottkydiode600V
BarcodeCode128
E83335
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F3L80R12W1H3
Abstract: igbt T3 infineon
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F3L80R12W1H3_B11 EasyPACKモジュールニュートラル ポイント クランプ2トポロジー内蔵andPressFIT/NTCサーミスタ
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F3L80R12W1H3
thinQHSiCdiode600V
thinQHSiCSchottkydiode600V
BarcodeCode128
igbt T3 infineon
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FS3L30R07W2H3F
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS3L30R07W2H3F_B11 /NTC /
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS3L50R07W2H3F_B11 /NTC /
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS3L50R07W2H3F_B11 EasyPACK模块采用第三代高速沟槽栅/场终止IGBT和第三代发射极控制二极管 带有pressfit压接管脚和温度检测NTC /
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