CVH2520
Abstract: No abstract text available
Text: INDUCTIVE COMPONENTS Bourns Releases Multilayer Power Chip Inductor Model CVH252009 Series Riverside, California - June 21, 2012 - Bourns Inductive Components Product Line introduces the new CVH252009 Series Power Chip Inductor which utilizes advanced multilayer technology to achieve a small
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CVH252009
2002/95/EC
2011/65/EU
IC1214
CVH2520
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IC1004
Abstract: SRP4020 SRP7030F
Text: 8R 2 R6 8 INDUCTIVE COMPONENTS Bourns Releases New High Current Power Inductors Models SRP4020 and SRP7030F Riverside, California - March 22, 2010 - Bourns Inductive Components Product Line introduces new models SRP4020 and SRP7030F. These two high current power inductor models are designed
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SRP4020
SRP7030F
SRP7030F.
SRP7030F
SRP4020)
SRP7030F)
IC1004
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2N3771
Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON
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2N3771*
2N3772
2N3771
2N3771/D
2N3771
2N3771 power circuit
2N3772
transistor 2N3771
1N5825
2N6257
MSD6100
2N3771 power transistor
Power Transistor 2N3771
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Untitled
Abstract: No abstract text available
Text: CBC-EVAL-11 EnerChip CC Inductive Charging Evaluation Kit Overview CBC-EVAL-11 is a demonstration kit combining an inductive transmitter board with a receiver board containing an EnerChip CC CBC3150 solid state storage device with integrated power management.
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CBC-EVAL-11
CBC-EVAL-11
CBC3150
DS-72-14
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solar usb charger schematic
Abstract: CBC3150 MSP430 data loggers Contactless charger AN-1025 CBC050 electromagnetic pulse kit CBC3150-D9C-TR1 CBC3150-D9C-TR5 MSP430
Text: CBC-EVAL-11 EnerChip CC Inductive Charging Evaluation Kit Overview CBC-EVAL-11 is a demonstration kit combining an inductive transmitter board with a receiver board containing an EnerChip CC CBC3150 solid state storage device with integrated power management.
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CBC-EVAL-11
CBC-EVAL-11
CBC3150
DS-72-14
solar usb charger schematic
MSP430 data loggers
Contactless charger
AN-1025
CBC050
electromagnetic pulse kit
CBC3150-D9C-TR1
CBC3150-D9C-TR5
MSP430
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Antenna Coil 13.56 MHz RFID design
Abstract: solar usb charger schematic MSP430 data loggers Full-Wave Bridge Rectifier wireless charger solar charger msp430 CBC3150-D9C-TR1 DS-72-14 electromagnetic pulse kit CBC-EVAL-11
Text: CBC-EVAL-11 EnerChip CC Inductive Charging Evaluation Kit Overview CBC-EVAL-11 is a demonstration kit combining an inductive transmitter board with a receiver board containing an EnerChip CC CBC3150 solid state storage device with integrated power management.
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CBC-EVAL-11
CBC-EVAL-11
CBC3150
DS-72-14
722-CBC-EVAL-11
Antenna Coil 13.56 MHz RFID design
solar usb charger schematic
MSP430 data loggers
Full-Wave Bridge Rectifier
wireless charger
solar charger msp430
CBC3150-D9C-TR1
electromagnetic pulse kit
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Untitled
Abstract: No abstract text available
Text: CBC-EVAL-11 EnerChip CC Inductive Charging Evaluation Kit Overview CBC-EVAL-11 is a demonstration kit combining an inductive transmitter board with a receiver board containing an EnerChip CC CBC3150 solid state storage device with integrated power management.
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CBC-EVAL-11
CBC-EVAL-11
CBC3150
DS-72-14
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2n3772
Abstract: 2N3771 power circuit 2N3771
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability
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2N3771*
2N3772
2n3772
2N3771 power circuit
2N3771
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1N5825
Abstract: 2N3771 2N3772 2N6257 MSD6100
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability
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2N3771*
2N3772
2N3771
r14525
2N3771/D
1N5825
2N3771
2N3772
2N6257
MSD6100
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2n3772
Abstract: 2n3771 2N3772 APPLICATIONS
Text: SavantIC Semiconductor Product Specification 2N3771 2N3772 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power and high current capability APPLICATIONS ·For linear amplifiers, series pass regulators and inductive switching applications
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2N3771
2N3772
2N3771
2n3772
2N3772 APPLICATIONS
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high power transistor
Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.
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2N3772
high power transistor
transistor 7333
Transistor 358 to3
2N3772
transistor 928
2N3772 APPLICATIONS
transistor 358 to-3
358 transistor
2N3772A
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35N04G
Abstract: NJD35N04G
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features •
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
NJD35N04G
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DARLINGTON MANUAL
Abstract: 100 amp npn darlington power transistors NJD35N04G NJD35N04T4G d marking code dpak transistor
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
NJD35N04/D
DARLINGTON MANUAL
100 amp npn darlington power transistors
NJD35N04G
NJD35N04T4G
d marking code dpak transistor
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35N04G
Abstract: schematic diagram electrical motor control
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
schematic diagram electrical motor control
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35N04G
Abstract: NJD35N04G NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
NJD35N04/D
35N04G
NJD35N04G
NJD35N04T4G
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Untitled
Abstract: No abstract text available
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
NJD35N04/D
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NJD35N04G
Abstract: NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
35N04G
NJD35N04/D
NJD35N04G
NJD35N04T4G
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MJE13005
Abstract: MJE-13005 MJE130 transistor mje13005 circuit based on MJE13005 8805 VOLTAGE REGULATOR MJE13005 TRANSISTOR F 9016 transistor transistor 7333
Text: MJE13005 Power Transistor Switchmode Series NPN Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC
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MJE13005
MJE13005
MJE-13005
MJE130
transistor mje13005
circuit based on MJE13005
8805 VOLTAGE REGULATOR
MJE13005 TRANSISTOR
F 9016 transistor
transistor 7333
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2N3771G
Abstract: 2N3771 2N3772 2N3772G 2N6257
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability
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2N3771,
2N3772
2N3771
2N3771
O-204AA
2N3771G
2N3772
2N3772G
2N6257
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2N3772 motorola
Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N3771* 2N3772 High Power NPN Silicon Power Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 20 and 30 AMPERE
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2N3771/D*
2N3771/D
2N3772 motorola
2N3771
1N5825
2N3772
2N6257
MSD6100
motorola 2n3771
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2N3712
Abstract: mbd5300 2N3772 MSD6100 mbd-5300
Text: HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch ing applications. Features: • Forward biased second breakdown current capability
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2N3772
2N3772
2N3712
mbd5300
MSD6100
mbd-5300
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2N3771 power circuit
Abstract: 2N3771 MBD5300 MSD6100
Text: HIGH POWER 2N3771 NPN POWER TRANSISTORS 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch ing applications. Features: • Forward biased second breakdown current capability
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OCR Scan
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2N3771
T0-204AA
2N3771 power circuit
2N3771
MBD5300
MSD6100
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2SC2625
Abstract: npn transistor 2sc2625 power transistor 2sc2625 NPN Transistor 400v to247 2SC262 transistor 2sc2625 UNIT JUNCTION TRANSISTOR 2sC2625 transistor
Text: /zAMOS PEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, and switchmode applications such as switching regulator's,converters. FEATURES: *Collector-Emitter Sustaining Voltage^ ceo sus =
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OCR Scan
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2SC2625
10AMPERE
2SC2625
npn transistor 2sc2625
power transistor 2sc2625
NPN Transistor 400v to247
2SC262
transistor 2sc2625
UNIT JUNCTION TRANSISTOR
2sC2625 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2 N 3772 High Power NPN Silicon Power Transistors ‘ Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.
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OCR Scan
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2N3771/D
2N3771
2N3772
O-204AA
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