IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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IN3595
Abstract: 1N3595
Text: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V
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1N3595
150mAdc
500mA
83Vdc
125Vdc
79Vdc
92Vdc
30Vdc
50mAdc
74Vdc
IN3595
1N3595
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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SDT9207
Abstract: SDT9202 SDT9209 SDT9204 SDT9208 SDT9203 SDT9205 SDT9201 2N3236 2N6046
Text: 39 SILICON POWER TRANSISTORS CURREN T GAIN SATURATION VOLTAGES s> TYPE CASE NUMBER TYPE VCBO V VCEO V IV V EBO hFE MIN. I MAX. VCE <s> 'c A V CE s V V BE:(s) I V *C A I *B A 15 AMP SILICON SIPN 2 N3055 2N3235 2N3236 TO-3 TO-3 TO-3 100 65 90 60 55 90 7.0 7.0
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1N194A
1N195
1K200
1N201
JN202
IN4829
1N4J30
MP035Ã
MPD302
MPB401
IN3599
1N9168
1N4242
IN485
IN625
1N20S
1N4389
1N4243
in648
IN458a
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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DD0DB05
IN3599
IN433A
IN625
1N3068
1N218
1N4147
IN648
1N3069
1N3067
IN485
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