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    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


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    PDF MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25

    Untitled

    Abstract: No abstract text available
    Text: MX25L2026E MX25L2026E DATASHEET P/N: PM1580 1 REV. 1.4, NOV. 14, 2013 MX25L2026E Contents FEATURES. 4


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    PDF MX25L2026E PM1580

    Untitled

    Abstract: No abstract text available
    Text: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4


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    PDF MX25L6475E PM1831

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


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    PDF MX25L1673E PM1912

    8-USON

    Abstract: No abstract text available
    Text: MX25L512E MX25L512E DATASHEET P/N: PM1669 1 REV. 1.3, DEC. 10, 2013 MX25L512E Contents FEATURES. 4


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    PDF MX25L512E PM1669 8-USON

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


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    PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    A29L008

    Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
    Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:


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    PDF A29L008 KbyteX15 SA10 SA11 SA12 SA13 SA14 SA15 SA16

    a29040al-70

    Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
    Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


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    PDF A29040A a29040al-70 A29040A-55 A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    27C4000-15

    Abstract: 27C40001 IN3064 MX27C4000 MX27C4000QC-10 27C4000-12 MX27C4000MC-90 27c4000-10 27C4000
    Text: MX27C4000 4M-BIT [512K x8] CMOS EPROM FEATURES • • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: 512K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 90/100/120/150 ns Totally static operation


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    PDF MX27C4000 100uA MX27C4000 fea/1997 MAR/01/2000 AUG/20/2001 AUG/13/2002 NOV/19/2002 JUN/19/2003 27C4000-15 27C40001 IN3064 MX27C4000QC-10 27C4000-12 MX27C4000MC-90 27c4000-10 27C4000

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    A29L800

    Abstract: A29L800V
    Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.


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    PDF A29L800 KbyteX15 KwordX15 48TFBGA) A29L800V

    amic a290021t-70

    Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
    Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


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    PDF A29002/A290021 amic a290021t-70 A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


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    PDF Am28F020 32-pin

    D1C12

    Abstract: 52832 CERAMIC LEADLESS CHIP CARRIER 52832HR 52832I IN3064 030070 TIME00 4Kx8 ram ttl NCR Microelectronics Division
    Text: N C 52832 R 32K 4Kx8 EEPROM >Electrically Erasable PROM >Advanced SNOS N-Channel Technology 1300 ns Access Times >Low Power Dissipation 1Memory Margining • 3-State Outputs • Latched Address & Data Bus • 28 Pin DIP With Industry Standard Byte-Wide Pinout


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    100140 ecl

    Abstract: 2N1710
    Text: ADV MICRO TELECOM 2 flE D DSS7S27 ODSTTÖl 1 7 ^ / ’S - 3 7 - ò £ ~ Preliminary Am7968/Am7969-175 a Advanced Micro Devices TAXIchip Integrated Circuits DISTINCTIVE CHARACTERISTICS • Parallel TTL bus interface 100-140 Mbps (12.5-17.5 Mbytes/sec) data


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    PDF DSS7S27 Am7968/Am7969-175 28-pln Am7968/Arri7969-175 0E575E7 06751E 100140 ecl 2N1710

    Untitled

    Abstract: No abstract text available
    Text: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches


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    PDF Am2817A 10-year Am9864 6891A) 384-bit MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current


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    PDF Am28F020A 32-pin

    29LV008

    Abstract: No abstract text available
    Text: — P R E L IM IN A R Y — AMD Cl Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • ■ ■ Single power supply operation ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered


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    PDF Am29LV008T/Am29LV008B 29LV008

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    PDF Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements


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    PDF Am29F200AT/Am29F200AB 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: Am54S/74S242Am54S/74S243 Quad Bus Transceivers with Three-State Outputs DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • • • • • • The Am 54S/74S242 and Am54S/74S243 are quad bus trans­ ceivers designed for asynchronous two-way com munications


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    PDF Am54S/74S242 Am54S/74S243 Am74S; Am54S 54S/74S242 MIL-STD-883

    am7969-125dc

    Abstract: No abstract text available
    Text: , 21 n o 'i * 2 Preliminary a A m 7 9 h 1 0 6 8 /A m 7 9 h 1 0 6 9 -1 2 5 FOXIchip Set Fiber Optic Xmitter - Receiver interface with TAXI™ Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Complete ‘Byte-to-Light™’ solution for fiber optic links


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    PDF 28-Pin Am7968/Am7969-125DC Am79h1068 am7969-125dc